Wolfspeed, A Cree Company, has announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for satellite and space systems. Wolfspeed’s proven GaN-on-SiC fabrication processes have demonstrated industry-leading reliability and performance, delivering more than 100 billion total hours of field operation with a best-in-class FIT rate of less than-5-per billion device hours for discrete GaN RF transistors and multi-stage GaN MMICs.
Wolfspeed partnered with KCB Solutions, a recognized leader in RF and microwave components to conduct a comprehensive testing program to demonstrate that Wolfspeed’s GaN-on-SiC devices meet NASA EEE-INST-002 Level 1 reliability and performance standards, derived from the MIL-STD requirements for Class S and Class K qualifications.
The testing program consisted of five test procedures conducted by KCB Solutions on Wolfspeed’s 25W GaN-on-SiC HEMT CGH40025F and their 25W 2-Stage X-Band GaN MMIC CMPA801B025F devices, which are produced using the company’s proven 0.4µm G28V3 fabrication process. Both devices demonstrated no significant RF performance change after undergoing all the test procedures, including exposure to a cumulative dose of radiation exceeding 1Mrad.
Virtually all space and satellite equipment manufacturers require electronic components to meet established high-reliability military qualification standards in order to be specified into their communications and radar systems. These standards include MIL- PRF-38535 Class S for single chips, and MIL-PRF38534 Class K for multichip modules. Wolfspeed’s collaboration with KCB Solutions allows them to upscreen their GaN devices to ensure they are in compliance with the NASA EEE-INST-002 level 1 standards based on these Class S and Class K requirements. As a result of this successful testing at KCB Solutions, several companies have already specified Wolfspeed’s GaN devices for their space applications.