GaN transistor handles 26-A pulsed output current thanks to RDS(on) of 65 mΩ

Efficient Power Conversion (EPC) announces the EPC2050, a 350 V GaN transistor with a maximum R_DS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.

The EPC2050 is just 1.95 mm x 1.95 mm (3.72 mm2). Designers no longer have to choose between size and performance – they can have both! Given the tiny size of the EPC2050, a highly efficient half bridge with gate driver occupies five times less area than a comparable silicon solution. Despite the small size of the chip-scale packaging, EPC2050 handles thermal conditions more efficiently than plastic packaged MOSFETs.

 The performance and cost gap of silicon with eGaN technology widens with the 350 V, EPC2050, that is almost 20 times smaller than the closest silicon MOSFET.” said Alex Lidow, EPC’s CEO.

The EPC9084 development board is a 350 V maximum device voltage, half bridge featuring the EPC2050, and the Silicon Labs Si8274GB1-IM gate driver. This 2” x 1.5” (51 mm x 38 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the 350 V EPC2050 eGaN FET.

The EPC2050 eGaN FET is priced for 1K units at $3.19 each and the EPC9084 development board is priced at $118.75 each

Both products are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en