ROHM Semiconductor announced that its SiC MOSFET bare chips are now integrated in Schaeffler’s new high-voltage inverter brick, which has entered mass production for a major Chinese automaker.
The inverter brick generates high-frequency current pulses that operate the vehicle’s electric motor. The component supports battery voltages beyond the standard 800V while managing RMS currents of up to 650A in a compact design. Development took one year from concept to volume production readiness.
ROHM’s silicon carbide power semiconductors enable high power density in a compact form factor. The modular and scalable architecture ensures integration into various inverter systems.
The sub-module incorporates the power module for pulse-width modulation, DC link capacitor, DC link, and cooling system. The integrated DC boost function allows vehicles with 800 V architectures to charge at 400 V charging stations while maintaining 800 V charging speeds.

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