IGBT in high-density D2PAK handles up to 40 A, 650 V

Infineon Technologies AG expands its product portfolio of the thin-wafer technology TRENCHSTOP 5 IGBT. The new product family is offering up to 40 A 650V IGBT, co-packed with a full rated 40 A diode in a surface mounting TO-263-3 also known as D2PAK. The new TRENCHSTOP 5 IGBT in D2PAK package serves the growing demand for higher power density in power devices for automated surface mounted assembly. Typical applications requiring highest power density and efficiency are solar inverters, uninterruptible power supply (UPS), battery charging, and energy storage.

The ultra-thin TRENCHSTOP 5 technology from Infineon allows higher power density in a smaller chip size. Thus, Infineon is the first to fit a 40 A 650V IGBT together with a 40 A diode in D2PAK housing. Compared to competing products in D2PAK, the new family offers a higher rating than any other product on the market, with other co-packed solutions delivering only 75 percent of the power.

The high power density of the new devices enables designers to upgrade existing designs, to develop new platforms with up to 25% higher power output or to reduce the quantity of power devices used in parallel and thus allowing more compact designs. The unique co-packed 40 A in D2PAK can be considered as an alternative to D3PAK or TO-247 used for surface mounting. This supports easy soldering, leading to fast and reliable assembly.

The new TRENCHSTOP 5 650V IGBTs in D2PAK are released for high volume production. The product family comprises 15 A, 20 A, 30 A single IGBT and 15 A, 20 A, 30 A and 40 A IGBT co-packed with the same current freewheeling diode.