• Skip to primary navigation
  • Skip to main content
  • Skip to primary sidebar
  • Skip to footer
  • Subscribe
  • Advertise

Power Electronic Tips

Power Electronic News, Editorial, Video and Resources

  • Products
    • Power Supplies
    • AC-DC
    • DC-DC
    • Battery Management
    • Capacitors
    • Magnetics
    • MOSFETS
    • Power Management
    • RF Power
    • Resistors
    • Transformers
    • Transistors
  • Applications
    • 5G
    • AI
    • Automotive
    • EV Engineering
    • LED Lighting
    • Industrial
    • IoT
    • Wireless
  • Learn
    • eBooks / Tech Tips
    • EE Training Days
    • FAQ
    • Learning Center
    • Tech Toolboxes
    • Webinars & Digital Events
  • Resources
    • Design Guide Library
    • Digital Issues
    • Engineering Diversity & Inclusion
    • LEAP Awards
    • Podcasts
    • White Papers
    • Design Fast
  • Video
    • EE Videos & Interviews
    • Teardown Videos
  • EE Forums
    • EDABoard.com
    • Electro-Tech-Online.com
  • Engineeering Training Days
  • Newsetter Subscription

Isolated gate driver safely controls SiC MOSFETs

March 18, 2021 By Redding Traiger

Joining STMicroelectronics’ STGAP family of isolated gate drivers, the STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a high-voltage rail up to 1200V.

Capable of producing a gate-driving voltage up to 26V, the STGAP2SiCS has a raised Under-Voltage Lockout (UVLO) threshold of 15.5V to meet the turn-on requirements of SiC MOSFETs. If the driving voltage is too low, which can be caused by low supply voltage, the UVLO ensures the MOSFET is turned off to prevent excessive dissipation. The driver features dual input pins that let designers determine the gate-drive signal polarity.

With 6kV of galvanic isolation between the input section and the gate-driving output, the STGAP2SiCS helps ensure safety in consumer and industrial applications. Its 4A output-sink/source capability is suited to mid-and high-power converters, power supplies, and inverters in equipment such as high-end home appliances, industrial drives, fans, induction heaters, welders, and UPSes.

Two different output configurations are available. One has separate output pins that allow independent optimization of turn-on and turn-off times using a dedicated gate resistor. The second is featured for high-frequency hard switching, with a single output pin and active Miller clamp that limits oscillation of the SiC MOSFET gate-source voltage to prevent unwanted turn-on and enhance reliability. The input circuitry is compatible with CMOS/TTL logic down to 3.3V, which allows easy interfacing with a wide variety of control ICs.

The STGAP2SiCS features a standby mode that helps cut system power consumption, as well as built-in protection including hardware interlocks to prevent cross conduction and thermal shutdown of both the low-voltage section and the high-voltage driving channel. Matched propagation delays between the low-voltage and high-voltage sections prevent cycle distortion and minimize energy losses. The total delay is less than 75ns, permitting accurate pulse-width modulation (PWM) control up to high switching frequencies.

Housed in a wide-body SO-8W package that ensures 8mm creepage within a compact footprint, the STGAP2SiCS is available now priced at $2.00 in quantities of 1000 units.

You may also like:


  • Measuring a sense-resistor’s voltage drop, Part 3: CMV-suitable components
  • sense-resistor
    Measuring a sense-resistor’s voltage drop, Part 2: Isolation

  • Measuring a sense-resistor’s voltage drop, Part 1: Sensing issues

  • HVDC transmission system architectures and use cases
  • PoE
    Harnessing Power-over-Ethernet efficiently

  • How SiC boosts efficiency in power conversion

  • How to design modular dc-dc systems

Filed Under: Converters, Development Tools, drivers, Industrial, inverters, MOSFETS, Power Supplies Tagged With: stmicroeletronics

Primary Sidebar

Featured Contributions

Robust design for Variable Frequency Drives and starters

Meeting demand for hidden wearables via Schottky rectifiers

The case for vehicle 48 V power systems

GaN reliability milestones break through the silicon ceiling

Developing power architecture to support autonomous transportation

More Featured Contributions

EE LEARNING CENTER

EE Learning Center

EE TECH TOOLBOX

“ee
Tech Toolbox: 5G Technology
This Tech Toolbox covers the basics of 5G technology plus a story about how engineers designed and built a prototype DSL router mostly from old cellphone parts. Download this first 5G/wired/wireless communications Tech Toolbox to learn more!

EE ENGINEERING TRAINING DAYS

engineering
“power
EXPAND YOUR KNOWLEDGE AND STAY CONNECTED
Get the latest info on technologies, tools and strategies for EE professionals.
“bills

RSS Current EDABoard.com discussions

  • Phase shift full bridge with SiC FETs is irresponsible?
  • VHF radio
  • I think i have devised a new type of "super_transformer" for the Electricity grid?
  • Finding past posts on edaboard?
  • Industrial Relay Board Design for Motorcycle Use

RSS Current Electro-Tech-Online.com Discussions

  • Data is not transferring to Data register of SPI in MG32F157VCT6
  • Sump pit water alarm - Kicad 9
  • Pic18f25q10 osccon1 settings swordfish basic
  • Anyone jumped from Easyeda std to Easyeda pro?
  • turbo jet fan - feedback appreciated.

DesignFast

Component Selection Made Simple.

Try it Today
design fast globle

Footer

EE World Online Network

  • 5G Technology World
  • EE World Online
  • Engineers Garage
  • Analog IC Tips
  • Battery Power Tips
  • Connector Tips
  • DesignFast
  • EDA Board Forums
  • Electro Tech Online Forums
  • EV Engineering
  • Microcontroller Tips
  • Sensor Tips
  • Test and Measurement Tips

Power Electronic Tips

  • Subscribe to our newsletter
  • Advertise with us
  • Contact us
  • About us

Copyright © 2025 · WTWH Media LLC and its licensors. All rights reserved.
The material on this site may not be reproduced, distributed, transmitted, cached or otherwise used, except with the prior written permission of WTWH Media.

Privacy Policy