Nexperia announced a new package in its MOSFET and LFPAK family which, when combined with its latest silicon technology, results in 40 V MOSFETs delivering a low RDS(on) of 0.7 mΩ. LFPAK88 devices replace larger power packages such as D²PAK and D²PAK-7, and measuring 8 x 8 mm offer a footprint reduction of 60 %, and a 64 % lower profile.
Unlike other packages where performance is often limited by internal bond wires, LFPAK88 devices employ the copper-clip and solder die attach construction, resulting in low electrical & thermal resistance, good current spreading and heat dispersal. In addition, the thermal mass of the copper-clip also reduces hot-spot formation which results in improved avalanche energy (Eas) and linear-mode (SOA) performance. The combination of high continuous and demonstrated current rating ID(max) of 425 A and low RDS(on) of 0.7 mΩ in a smaller package size, presents market-leading power density of up to 48 times when compared to D2PAK devices.
Finally, the LFPAK88, with its low-stress gull-wing leads is a more rugged and thermally robust package, delivering reliability levels more than two times better than is required by AEC-Q101. Comments Neil Massey, Product Manager at Nexperia: “Combining the LFPAK88 with our silicon technology results in MOSFETs that deliver 48x the power density of D2PAK. This proves that Nexperia, the inventor of the LFPAK, is still the leader in this technology.”
LFPAK88 MOSFETs are available in both automotive-qualified (BUK) and industrial (PSMN) grades. Automotive applications include braking, power steering, reverse battery protection and DC-DC converters, where the space-savings that can be achieved by using the devices is particularly useful in dual-redundant circuits. Industrial applications include battery-powered power tools, professional power supplies, and telecoms infrastructure equipment.