Nexperia launched AEC-Q101 qualified 100 V MOSFETs in compact CCPAK1212 copper-clip packaging. These devices deliver conduction losses with on-resistance as low as 0.99 mΩ and enable safe current above 460 A. This makes them suited for thermally demanding 48 V automotive applications, including on-board chargers, traction inverters, and battery management systems. The MOSFETs also benefit 2- and 3-wheel e-mobility, DC-DC converters, and industrial high-current modules, where efficiency and thermal reliability are critical.
Automotive original equipment manufacturers are moving from 12 V to 48 V subsystems to increase efficiency, reduce weight, and extend the driving range of xEV platforms. In these high-power applications, minimizing conduction losses is necessary. To achieve this, designers typically connect several MOSFETs in parallel to meet performance needs, but this approach can increase component count and board space required. With their RDS(on) and high power density, the CCPAK1212 MOSFETs reduce the need for parallel-connected devices, as well as saving up to 40% PCB space compared to traditional TOLL- or TOLT-packaged alternatives due to their compact size.
The 100 V AEC-Q101 trench silicon platform, combined with the thermal performance (Rth(j-b) = 0.1 K/W) of the copper-clip CCPAK1212 package, enables the RDS(on) specification. Together, these features provide the advantages required in 48 V automotive systems — high current capability, power density, and a Safe Operating Area rating of up to 400 A at 100 V.
The devices are available in inverted top-side cooled (CCPAK1212i) and bottom-side cooled (CCPAK1212) versions, giving engineers options for compact layouts and thermal management tailored to their system requirements.
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