Toshiba America Electronic Components, Inc. (TAEC)* has expanded its lineup of small, low on-resistance MOSFETs with the addition of the SSM6K513NU and SSM6K514NU. The new N-channel MOSFETs feature industry-leading[1] low on-resistance, and are suited for use as load switches in mobile devices such as smartphones and tablets.
The 30V SSM6K513NU and 40V SSM6K514NU utilize Toshiba’s latest U-MOS IX-H series trench process, which is designed to deliver efficiency across a wide range of load conditions by driving down on-resistance (RDS(ON)) and improving switching efficiency by reducing output charge (QOSS) [2]. The SSM6K513NU and SSM6K514NU achieve on-resistance of 6.5mOhm and 8.9mOhm, respectively, and reduce heat dissipation resulting from turn-on loss by approximately 40 percent when compared to existing products. [3]
The SSM6K513NU and SSM6K514NU can be used in electric power switching applications of over 10W, including small mobile devices that meet the USB Type-C™ and USB Power Delivery standards. Toshiba’s new MOSFETs contribute to high system efficiency and low power consumption in these space-conscious devices.
Main Specifications
| Part Number | Absolute Maximum Ratings | RDS(ON) typ. (mOhm) | Ciss typ. (pF) |
Package | |||
| VDSS
(V) |
VGSS
(V) |
ID
(A) |
VGS=4.5V | VGS=10V | |||
| SSM6K513NU | 30 | ±20 | 15 | 8 | 6.5 | 1130 | SOT-1220 |
| SSM6K514NU | 40 | ±20 | 12 | 11.2 | 8.9 | 1110 | |
