N-channel MOSFETs with low on-resistance target mobile devices

 Toshiba America Electronic Components, Inc. (TAEC)* has expanded its lineup of small, low on-resistance MOSFETs with the addition of the SSM6K513NU and SSM6K514NU. The new N-channel MOSFETs feature industry-leading[1] low on-resistance, and are suited for use as load switches in mobile devices such as smartphones and tablets.

The 30V SSM6K513NU and 40V SSM6K514NU utilize Toshiba’s latest U-MOS IX-H series trench process, which is designed to deliver efficiency across a wide range of load conditions by driving down on-resistance (RDS(ON)) and improving switching efficiency by reducing output charge (QOSS) [2]. The SSM6K513NU and SSM6K514NU achieve on-resistance of 6.5mOhm and 8.9mOhm, respectively, and reduce heat dissipation resulting from turn-on loss by approximately 40 percent when compared to existing products. [3]

The SSM6K513NU and SSM6K514NU can be used in electric power switching applications of over 10W, including small mobile devices that meet the USB Type-C™ and USB Power Delivery standards. Toshiba’s new MOSFETs contribute to high system efficiency and low power consumption in these space-conscious devices.

Main Specifications