N-channel MOSFETs sport super-low on resistance

Toshiba America Electronic Components, Inc. (TAEC)* has expanded its U-MOS IX-H Series of low-voltage N-channel power MOSFETs with the addition of new 40V and 45V products. Delivering high-speed performance and industry-leading[1] low on-resistance, the new MOSFETs are designed for industrial and consumer applications, including high-efficiency DC-DC converters, high-efficiency AC-DC converters, power supplies, and motor drives.

The new MOSFETs utilize Toshiba’s latest generation low-voltage trench structure U-MOS IX-H process to lower the performance index for “RDS(ON) * Qsw”[2] figure of merit, improving switching applications to a level that surpasses other offerings[3]. Output loss is improved by the reduction of output charge, which can contribute to higher set efficiency. Additionally, the cell structures used in the new MOSFETs are optimized to suppress spike voltage and ringing during switching, which can contribute to lowering set EMI.

Toshiba’s U-MOS IX-H Series is specifically designed for synchronous rectification applications, including the secondary side of isolated switching power supplies. It provides an improved Qoss[4] performance, which is one of the main causes of power loss of synchronous rectification. The U-MOS IX-H Series also provides a low Ron•Qoss, the trade-off characteristics between on-resistance and Qoss. Since Ron has a significant impact on Qoss, Toshiba will extend the U-MOS IX-H portfolio to include MOSFETs having ultra-low Ron in order to supplement its U-MOS VIII-H Series of MOSFETs.