Nexperia has announced a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging. Devices achieve superior switching FOMs and on-state performance with improved stability, and simplify application designs thanks to their cascode configuration which eliminates the need for complicated drivers and controls.
The new GaN technology employs through-epi vias, reducing defects and shrinking die size by around 24%. RDS(on) is also reduced to just 41 mΩ (max., 35 mΩ typ. at 25 °C) with the initial release in traditional TO-247, with high threshold voltage and low diode forward voltage. The reduction will further increase, to 39 mΩ (max., 33 mΩ typ. At 25 °C) with CCPAK surface-mount versions. Because the parts are configured as cascode devices, they are also simple to drive using standard Si MOSFET drivers. Both versions meet the demands of AEC-Q101 for automotive applications.
“Low-voltage MOSFETs are what we do for living,” says Michael LeGoff, Nexperia’s general manager for GaN. “And with a cascode configuration, we achieve better blocking voltage and less leakage current through the device.”
Dilder Chowdhury, Nexperia’s GaN Strategic Marketing Director commented: “Customers need a highly-efficient, cost-effective solution for high power conversion at 650 V and around the 30-40 mΩ RDS(on), where applications include on-board chargers, DC/DC converters and traction inverters in electric vehicles, and industrial power supplies in the 1.5-5 kW range for titanium-grade rack-mounted telecoms, 5G and datacenters. Nexperia continues to invest in the development and expansion of its range of products using next-generation GaN processes, initially releasing traditional TO-247 versions and bare die format for power module makers, followed by our high-performance surface mount CCPAK packages.”
Nexperia’s CCPAK surface mount packaging adopts Nexperia’s proven innovative copper-clip package technology to replace internal bond wires. This reduces parasitic losses, optimizes electrical and thermal performance, and improves reliability. CCPAK GaN FETs are available in top- or bottom-cooled configurations making them very versatile and help further improving heat dissipation.
650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK are sampling now.