• Skip to primary navigation
  • Skip to main content
  • Skip to primary sidebar
  • Skip to footer

Power Electronic Tips

Power Electronic News, Editorial, Video and Resources

  • Products
    • Power Supplies
    • AC-DC
    • DC-DC
    • MOSFETS
    • Power Management
    • Battery Management
    • RF Power
    • Resistors
    • Capacitors
    • Magnetics
    • Transformers
  • Applications
    • LED Lighting
    • Rack Mount
    • Wireless
  • EE Forums
    • EDABoard.com
    • Electro-Tech-Online.com
  • EE Learning Center
  • Video
    • EE Videos
    • TI Power Videos
    • Teardown Videos
  • Resources
    • Design Fast
    • eBooks / Tech Tips
    • FAQ
    • LEAP Awards
    • Podcasts
    • Webinars
    • White Papers

Next-gen, 650 V GaN devices in copper-clip SMD package deliver high-efficiency to automotive, industrial apps

June 11, 2020 By Aimee Kalnoskas Leave a Comment

Nexperia has announced a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging. Devices achieve superior switching FOMs and on-state performance with improved stability, and simplify application designs thanks to their cascode configuration which eliminates the need for complicated drivers and controls.

The new GaN technology employs through-epi vias, reducing defects and shrinking die size by around 24%. RDS(on) is also reduced to just 41 mΩ (max., 35 mΩ typ. at 25 °C) with the initial release in traditional TO-247, with high threshold voltage and low diode forward voltage. The reduction will further increase, to 39 mΩ (max., 33 mΩ typ. At 25 °C) with CCPAK surface-mount versions.  Because the parts are configured as cascode devices, they are also simple to drive using standard Si MOSFET drivers. Both versions meet the demands of AEC-Q101 for automotive applications.

“Low-voltage MOSFETs are what we do for living,” says Michael LeGoff, Nexperia’s general manager for GaN. “And with a cascode configuration, we achieve better blocking voltage and less leakage current through the device.”

new range of GaN FET devices

Dilder Chowdhury, Nexperia’s GaN Strategic Marketing Director commented: “Customers need a highly-efficient, cost-effective solution for high power conversion at 650 V and around the 30-40 mΩ RDS(on), where applications include on-board chargers, DC/DC converters and traction inverters in electric vehicles, and industrial power supplies in the 1.5-5 kW range for titanium-grade rack-mounted telecoms, 5G and datacenters. Nexperia continues to invest in the development and expansion of its range of products using next-generation GaN processes, initially releasing traditional TO-247 versions and bare die format for power module makers, followed by our high-performance surface mount CCPAK packages.”

Nexperia’s CCPAK surface mount packaging adopts Nexperia’s proven innovative copper-clip package technology to replace internal bond wires. This reduces parasitic losses, optimizes electrical and thermal performance, and improves reliability. CCPAK GaN FETs are available in top- or bottom-cooled configurations making them very versatile and help further improving heat dissipation.

650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK are sampling now.

You may also like:

  • GaN power devices
    GaN power devices, Part 2: Application
  • GaN power devices
    GaN power devices, Part 1: Principles

Filed Under: MOSFETS Tagged With: nexperia

Reader Interactions

Leave a Reply Cancel reply

Your email address will not be published. Required fields are marked *

This site uses Akismet to reduce spam. Learn how your comment data is processed.

Primary Sidebar

DesignFast

Component Selection Made Simple.

Try it Today
design fast globle

Subscribe to our Newsletter

The Power Electronic eNewsletter delivers breaking electronic and power component news, resources, product innovations and more.

Subscribe today

Test & Measurement Handbook


EE TRAINING CENTER CLASSROOMS

“ee

“ee

“ee

“ee

“ee

RSS Current EDABoard.com discussions

  • FA5331P Buck boost PFC can't run at 100Vdc input
  • 2 BLDC Motor Controller design
  • OFFSET VOLTAGE
  • trace width calc
  • Alternatives to always@(posedge clk, negedge clk)

RSS Current Electro-Tech-Online.com Discussions

  • Touch circuit sound, led. 555 timer
  • LTpowerCAD not working today
  • Summing Mixer Cct self oscillating - ANSWERED
  • Cannot find part number for ferrite ring torroid
  • Funny Images Thread!

Follow us on Twitter

Tweets by PowerElectrTips

Footer

EE World Online Network

  • DesignFast
  • EE World Online
  • EDA Board Forums
  • Electro Tech Online Forums
  • Connector Tips
  • Microcontroller Tips
  • Analog IC Tips
  • Sensor Tips
  • Test and Measurement Tips
  • Wire and Cable Tips
  • 5G Technology World

Power Electronic Tips

  • Subscribe to our newsletter
  • Advertise with us
  • Contact us
  • About us
Follow us on TwitterAdd us on FacebookFollow us on YouTube Follow us on Instagram

Copyright © 2021 · WTWH Media LLC and its licensors. All rights reserved.
The material on this site may not be reproduced, distributed, transmitted, cached or otherwise used, except with the prior written permission of WTWH Media.

Privacy Policy