Toshiba Electronic Devices & Storage Corporation has launched a 150V N-channel power MOSFET “TPH9R00CQH” that uses the latest-generation (*1) process, “U-MOSX-H,” and that is suitable for use in switching power supplies for industrial equipment — including those deployed in data centers and communications base stations.

TPH9R00CQH has drain-source on-resistance about 42% lower than TPH1500CNH, a 150V product that uses the current-generation process, U-MOSVIII-H. Optimization of the new MOSFET structure has improved the trade-off (*2) between the drain-source on-resistance and two charge characteristics (*3), realizing excellent low-loss characteristics. In addition, spike voltage between the drain and source at switching operation is reduced, helping to lower electromagnetic interference (EMI) in switching power supplies. Two types of surface mount packages are available: SOP Advance and the more popular SOP Advance (N).

Shipments start on March 31.