Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm x 7mm QFN package. The new device offers low RDS(ON) of 180mOhm and fast switching to deliver a highly efficient, low-cost power solution in a small footprint for a variety of applications requiring high power density including USB-PD charger, server, and telecom AC-DC power supplies, power factor correction (PFC) converter.
The TP44200NM Power IC has 650V E-mode GaN Power FET, driver, UVLO, and high DV/DT immunity with and without supply – all monolithically integrated on GaN-on-Si substrate. The device has low propagation delay for high-frequency applications and slew rate control through an external resistor.
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