ON Semiconductor has launched new Power Modules that offer excellent energy efficiency, reliability and performance in highly integrated and compact packaging, adding to the company’s already robust portfolio of power semiconductor devices.
Traditionally, power stages in applications such as solar power inverters, UPS inverter stages and industrial variable frequency drives (VFD) have been built from discrete IGBTs / MOSFETs with dedicated drivers and additional discrete components. ON Semiconductor’s new NXH160T120L2Q1SG and NXH160T120L2Q2F2SG Power Integrated Modules (PIMs) dramatically ease the designer’s challenge by providing compact, highly integrated solutions in easily mountable packages that save space and reduce costs.
The devices, available in Q1 & Q2 packages targeted for 30KW & 50KW inverters, integrate field stop trench IGBTs and fast recovery diodes that provide lower conduction and switching losses and enable designers to trade off between low VCE(SAT) and low EON / EOFF losses to fully optimize circuit performance. The direct bond copper (DBC) substrate permits high current operation with minimal effects from parasitic inductance, allowing designers to achieve high switching speeds as well as delivering 3000 Vrms of isolation with a 12.7mm creepage distance.
In addition, the company has announced the new FDMF3170, a fully optimized, ultra-compact Smart Power Stage (SPS) multi-chip module for DC-DC buck converter applications in servers, data centers, artificial intelligence accelerators and telecommunications equipment. It integrates two high-performance power MOSFETs based on ON Semiconductor’s PowerTrench® technology, and a smart driver featuring a high precision current sensor for maximum processor performance.