STMicroelectronics has introduced three radiation-hardened low-voltage rectifier diodes intended for power conversion and protection circuits used in Low Earth Orbit satellites. The LEO1N58xx devices are supplied in SOD128 plastic packages and are positioned for use in switched-mode power supplies and high-frequency DC-DC converter stages where low forward drop and fast recovery support efficiency and transient performance.
The diodes are manufactured using Power Schottky and ultrafast process technologies derived from existing space-grade device flows. They are produced under controlled manufacturing and traceability practices, including automotive IATF 16949 processes with wafer-level traceability. The parts are qualified to AEC-Q101, subject to wafer-lot acceptance testing, and shipped with a Certificate of Conformity to support flight-hardware documentation requirements.
Electrical options in the family include two Schottky rectifiers and one ultrafast rectifier. The LEO1N5819 provides 1 A / 45 V performance and the LEO1N5822 provides 3 A / 40 V performance, both specified over a –40 °C to 150 °C temperature range. The ultrafast LEO1N5811 is rated up to 6 A and 150 V and is specified up to 175 °C for higher-temperature operating margins.
Radiation performance is addressed through radiation-hardening-by-design targeting total ionizing dose, total non-ionizing dose, and single-event effects. Qualification references ESCC 22900 for total ionizing dose up to 300 krad(Si), ESCC 22500 for total non-ionizing dose up to 3 × 10¹¹ p/cm², and ESCC 25100 for single-event burnout up to 60 MeV·cm²/mg.
The diodes are in production. Pricing for 1,000-unit quantities is listed at $3.00 for the LEO1N5819AF, $5.00 for the LEO1N5822AF, and $4.50 for the LEO1N5811AF.
Leave a Reply
You must be logged in to post a comment.