Efficient Power Conversion (EPC) has entered a licensing agreement with Renesas Electronics for EPC’s low-voltage enhancement-mode gallium nitride (eGaN) technology. Renesas will establish internal wafer fabrication for these devices and second-source select EPC GaN products currently in mass production.
The agreement addresses supply-chain concerns by creating an additional qualified manufacturer for existing EPC devices. Over the next year, EPC and Renesas will work to transfer manufacturing processes and establish production capabilities at Renesas facilities.
The licensed technology covers low-voltage GaN transistors, particularly targeting power conversion in the 1V to 48V range. These devices are used in DC-DC converters, point-of-load regulators, and power delivery networks where switching frequency, efficiency, and board space are design constraints.
GaN transistors switch faster than silicon MOSFETs due to lower gate charge and output capacitance. This enables designers to increase switching frequencies, often from 500kHz to several MHz, while maintaining or improving efficiency. Higher switching frequencies allow smaller passive components, reducing overall solution size and cost.
The technology addresses specific design challenges in AI infrastructure power delivery for 48V-to-1V multiphase converters requiring high current density and transient response, client computing voltage regulator modules where thermal management and efficiency at high currents are critical, and battery-powered systems where switching losses directly impact runtime and thermal performance.
Renesas recently acquired Transphorm, gaining high-voltage GaN technology for AC-DC conversion, motor drives, and EV charging. This licensing deal extends their portfolio to low-voltage applications, creating coverage across the full voltage spectrum of power electronics.
For engineers currently using EPC devices, the second-sourcing arrangement means an additional qualified supplier without requiring design changes. Renesas brings established semiconductor manufacturing infrastructure and supply-chain capabilities to support volume production. Internal fabrication at Renesas facilities is expected within one year, with second-source production of selected EPC devices beginning during this qualification period.







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