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SiC half-bridge power module/gate driver
brings low switching losses

May 17, 2016 By Abby Esposito Leave a Comment

WS136 CAS325M12HM2 Power Module PR
The new module allows systems designers to realize lighter weight systems that are up to 67% smaller by achieving efficiencies of over 98% and improvements in power density of up to 10 times compared to systems built with silicon-based technologies.

Wolf speed (A Cree Company), a global supplier of silicon carbide (SiC) power products, has introduced the first fully-qualified commercial power module from its Fayetteville, Arkansas location.

The high-performance 62 mm module represents a new generation: SiC power modules that enable unprecedented efficiency and power density for high current power electronics, such as converters/inverters, motor drives, industrial electronics and high performance electric vehicle systems.

The new module allows systems designers to realize lighter weight systems that are up to 67% smaller by achieving efficiencies of over 98% and improvements in power density of up to 10 times compared to systems built with silicon-based technologies.

Compared to conventional silicon IGBT power modules, or even previous generations of SiC MOSFET modules, the new module will offer significantly higher power density for applications in which volume and weight are critical limitations. Operating at a higher switching frequency without any compromise in system efficiency means a reduction in the number and size of magnetic and passive components required for the balance of the system. The superior thermal characteristics of SiC devices, along with the packaging design and materials, enable the module to operate at 175° C, which is a key advantage for many industrial, aerospace and automotive applications.

The newly commercialized Wolfspeed module design is the industry’s most optimized to achieve the unique benefits of SiC technology with a 66% reduction in module inductance to 5.5 nH, compared to competitive power products at 15 nH. This reduction in module inductance enables faster switching speeds, higher frequency operation and ultra-low losses.

Available as part number CAS325M12HM2, the power module is configured in a half-bridge topology comprised of seven 1.2 kV 25 mΩ C2M SiC MOSFETs and six 1.2 kV 50 A Z-Rec Schottky diodes. The companion gate driver (CGD15HB62LP) is specifically designed for integration with the module to fit within the 62 mm mounting footprint. An engineering evaluation kit that includes both the module and the gate driver is also available so design engineers can quickly and easily test the performance of the new device in their systems.

Wolf speed
www.wolfspeed.com

Filed Under: MOSFETS Tagged With: wolfspeed

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