SemiQ Inc. has expanded its 1200 V Gen3 SiC MOSFET line with five SOT-227 power modules offering RDS(on) values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. The new GCMS versions incorporate Schottky barrier diodes, which reduce switching losses at elevated temperatures compared with the non-SBD GCMX variants.
The modules are intended for medium-voltage, high-power conversion systems such as battery chargers, photovoltaic inverters, server power supplies, and energy storage equipment. All devices undergo wafer-level gate-oxide burn-in tests above 1400 V and are avalanche tested to 800 mJ, or 330 mJ for the 34 mΩ versions.
Each module includes an isolated backplate and direct-mount hardware for attaching to a heat sink. Junction-to-case thermal resistance ranges from 0.23 °C/W for the 7.4 mΩ modules to 0.70 °C/W for the 34 mΩ versions. Switching-loss data for the 7.4 mΩ GCMX007C120S1-E1 module shows a total of 4.66 mJ, with 3.72 mJ turn-on and 0.94 mJ turn-off energy, and a diode reverse-recovery charge of 593 nC.
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