SiC MOSFET modules use single switch and low-side chopper configurations

The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an industry-standard SOT-227 form factor for medium to high frequency power applications. The modules support single switch and low-side chopper configurations with continuous drain currents from 50 A to 200 A and on-resistance as low as 12.1 mΩ. Designed as drop-in replacements, the devices integrate a soft body diode to reduce switching losses and support applications such as EV chargers, solar inverters, DC/DC converters, UPS systems and telecom power supplies. The molded SOT-227 package provides up to 2500 V insulation for one minute and supports operating junction temperatures up to +175 °C.