SuperFET III MOSFETs sport 44% lower RDS(on)

Fairchild Semiconductor, now part of ON Semiconductor), today introduced its SuperFET III family of 650V N-channel MOSFETs, the company’s new generation of MOSFETs that meet the higher power density, system efficiency and exceptional reliability requirements of the latest telecom, server, electric vehicle (EV) charger and solar products.

The SuperFET III MOSFET family combines best-in-class reliability, low EMI, excellent efficiency and superior thermal performance to make it an ideal choice for high performance applications. Complementing its performance characteristics, its broad range of package options gives product designers greater flexibility, particularly with size constrained designs.

SuperFET III technology has the lowest Rdson in any easy drive version of a Super Junction MOSFET, delivering best-in-class efficiency. It achieves this thanks to advanced charge balancing technology which also enables 44 percent lower Rdson than its SuperFET II predecessors, in the same package size.

A key factor in the SuperFET III family’s exceptional ruggedness and reliability is its best-in-class body diode and three times better single pulse Avalanche Energy (EAS) performance than its closest competitor.

The lower peak drain-source voltage during turn-off of the 650V SuperFET III improves system reliability in low-temperature operation because the breakdown voltage naturally drops by 5 percent at -25℃ junction temperature than room temperature and the peak drain-source voltage becomes higher at low temperature.

These reliability advantages are particularly important for industrial applications such as solar inverters, Uninterruptable Power Supplies (UPS) and EV chargers which must be capable of enduring higher or lower external ambient temperatures. The SuperFET III MOSFET family is available today in multiple package and parametric options: