onsemi has released EliteSiC MOSFETs in the industry-standard T2PAK top-cool package for high-voltage automotive and industrial power conversion. The initial portfolio includes 650 V and 950 V silicon carbide MOSFET options intended for systems where thermal constraints and switching performance drive converter size, efficiency, and long-term reliability. Target applications include electric-vehicle traction and charging subsystems, solar inverters and infrastructure, and energy storage power stages.
The T2PAK top-cool mechanical design is intended to improve heat extraction by providing a direct thermal path from the MOSFET package to the system heatsink. This approach can reduce dependence on PCB heat spreading and enable lower junction temperatures in compact layouts. Lower operating temperature reduces stress on power semiconductors and surrounding passive components, supporting longer operating life under high load or elevated ambient conditions.
The package design is also intended to preserve low stray inductance to support fast switching and reduced switching losses in high-frequency topologies. By combining top-side cooling with a compact footprint, the format aims to support higher power density without requiring a tradeoff between thermal coupling and electrical performance.
The T2PAK EliteSiC MOSFETs are offered with a range of on-resistance values from 12 mΩ to 60 mΩ, allowing designers to select devices based on conduction loss targets, thermal budget, and efficiency requirements. Initial devices are shipping to lead customers, with additional variants planned in the product roadmap.
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