Crees silicon-carbide (SiC) technology continues to enable smaller, lighter, more efficient and lower-cost power systems with a new all-SiC 300A, 1.2kV half-bridge module. Packaged in industry-standard 62mm housing, the new module reduces energy loss due to switching by more than five times compared to the equivalent silicon solution. This best-in-class efficiency enables for the first […]
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Cree has Introduced the Industrys First Commercial Silicon Carbide
The new MOSFET, designated the C2M0025120D, is expected to be widely adopted in PV inverters, high voltage DC/DC converters, induction heating systems, EV charging systems, and medical CT applications. Based on Crees proven C2M SiC MOSFET technology, the new device has a pulsed current rating (IDS Pulse) of 250A and a positive temperature coefficient, providing […]
