Efficient Power Conversion Corporation (EPC) has introduced the EPC91120, a compact three-phase brushless DC (BLDC) motor drive inverter designed for integration within humanoid robot joints. The inverter uses EPC’s EPC23102 ePower Stage IC to provide high-efficiency, high-density motion control within a 32 mm-diameter footprint, enabling direct installation inside robotic motor housings. The EPC91120 integrates three […]
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Modular GaN reference design scales to 108 kW configurations
Efficient Power Conversion Corporation has released a 5 kW AC-to-48 V DC reference design using enhancement-mode gallium nitride power devices. The system achieves 96.5% efficiency and 116 W/in³ power density while meeting Open Rack V3 size specifications. The design consists of two stages. The EPC91107KIT front-end stage converts 240 VAC to 400 VDC using a […]
Circular inverter design eliminates electrolytic capacitors using MLCC-only DC link
Efficient Power Conversion Corporation (EPC) introduces the EPC91118, the first commercially available reference design to integrate gallium nitride (GaN) IC technology for humanoid robot motor joints. Optimized for space-constrained and weight-sensitive applications such as humanoid limbs and compact drone propulsion, the EPC91118 delivers up to 15 ARMS per phase from a 15 V to 55 […]
Eval board demonstrates two-phase buck converter with 50 V GaN FETs
Efficient Power Conversion Corporation (EPC) announces the release of the EPC91109, a performance evaluation board designed to demonstrate the benefits of enhancement-mode gallium nitride (eGaN) power devices in a compact, thermally efficient, two-phase synchronous buck converter. The board targets USB Power Delivery (USB-PD 3.1) applications up to 180 W and is optimized for space- and […]
GaN laser driver enables pulse widths as narrow as 5 ns with 10+ amp peak currents
Efficient Power Conversion has expanded its product lineup with the introduction of the EPC91116, a laser driver evaluation board designed for indirect time-of-flight applications in automotive and industrial sensing environments. The board is built around the automotive-qualified EPC2203 gallium nitride power transistor, enabling nanosecond-scale performance with a straightforward architecture. The EPC91116 addresses growing demand for […]
Reference design bridges micro and string inverter gap
Efficient Power Conversion Corporation (EPC) has introduced the EPC9178 reference design for photovoltaic (PV) optimizers. The design aims to improve reliability while reducing passive components in solar energy systems, advancing GaN technology applications in renewable energy. The EPC9178 features a back-to-back buck-boost converter topology that helps optimize energy harvesting for individual solar panels during conditions […]
AEC-Q101 qualified GaN FETs target 48-12 V dc/dc conversion, infotainment, LiDAR apps
Efficient Power Conversion Corporation expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 […]
Compact eGaN FETs target high power density converter apps
Efficient Power Conversion Corporation expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2066 (0.8 mΩ typical, 40 V) GaN FET. The low losses and small size of the EPC2066 make it the ideal switch for the secondary side of high power density 40 V – 60 V to […]
eGaN 100-V FETs feature lower gate charges, zero reverse-recovery losses
Efficient Power Conversion Corporation expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7 mΩ typical, 100 V) GaN FET. The EPC2071 is ideal for applications with demanding requirements for high power density performance including 48 V – 54 V input DC-DC for new servers and artificial intelligence. […]
Better thermal management of eGaN FETs
A few simple thermal management guidelines can help conduct heat away from GaN FETs. Assaad Helou, Efficient Power Conversion Enhancement-mode gallium nitride (eGaN) FETs offer high power-density with ultra-fast switching and low on-resistance, all in a compact form factor. However, the power levels these high-performance devices provide can be limited by extreme heat-flux densities. If […]
