EPC advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of EPC2218 and EPC2204100 V eGaN FETs. The applications for these leading-edge devices include synchronous rectification, class-D audio, infotainment systems, DC-DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones. The EPC2218 (3.2 mΩ, 231 […]
Demo board provides 48-12-V dc-dc converter for high-density computing/data centers
EPC announces the availability of the EPC9143, a 300 W DC-DC voltage regulator in 16th brick size. The EPC9143 power module integrates Microchip’s dsPIC33CK digital signal controller (DSC) with the latest generation EPC2053 eGaN FETs from EPC to achieve 96% efficiency in a 48 V input to 12 V output conversion at 25 A. The […]
Podcasts cover dc-dc converter, lidar, audio design with GaN technology
Efficient Power Conversion (EPC) Corporation has posted an update to its popular “How to GaN” video podcast series. The six videos included in the current release of the series provide practical examples to help designers employ GaN technology to create state-of-the-art DC-DC converters for AI servers and ultra-thin laptops, lidar for robots, drones, and autonomous […]
Video podcast series covers GaN power transistors and ICs
Efficient Power Conversion (EPC) Corporation has posted an update to its popular “How to GaN” video podcast series, These updated videos are based on the recently published third edition textbook, GaN Transistors for Efficient Power Conversion. This 14-part educational video podcast series is designed to provide power system design engineers a technical foundation and application-focused […]
Power stage IC handles 48-V dc-dc conversion via GaN technology
EPC announces the introduction of an 80 V, 12.5 A power stage integrated circuit designed for 48 V DC-DC conversion used in high-density computing applications and in motor drives for e-mobility. The EPC2152 is a single-chip driver plus eGaN FET half-bridge power stage using EPC’s proprietary GaN IC technology. Input logic interface, level shifting, bootstrap […]
Pulsed laser diode demo board targets flash Lidar apps
EPC announces the availability of the EPC9144, a 15 V, 28 A high current pulsed laser diode driver demonstration board. In time-of-flight systems, speed and accuracy of object detection is critical. As demonstrated on this board, the rapid transition capability of the AEC Q101-qualified EPC2216 provides power pulses to drive laser diodes, VCSELs or LEDs […]
Automotive-qualified 5-V GaN FET optimized for high-rez lidar
EPC announces successful AEC Q101 qualification of the 15 V EPC2216 designed for lidar applications where increased accuracy is vital such as in self-driving cars and other time-of-flight (TOF) applications including facial recognition, warehouse automation, drones, and mapping. The EPC2216, an 15 V, 26 mΩ, eGaN FET with a 28 A pulsed current rating in […]
Third edition of GaN textbook focuses on power conversion applications
Efficient Power Conversion Corporation (EPC) announce the publication of the third edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons. This textbook is designed to provide power system design engineering students, as well as practicing engineers, basic technical and application-focused information […]
Low-cost GaN FETs to be incorporated into 250 W wireless power platforms
EPC announces collaboration with Solace Power, a leading wireless power, sense and data company, to enable 250-watt wireless power solutions designed for 5G, aerospace, automotive, medical, and industrial applications. Solace Power’s intelligent wireless platform use EPC’s 200 V enhancement-mode gallium nitride (eGaN) power transistors. This modular platform shares the same Equus architecture and enables up to […]
eGaN 30-V half-bridge module targets PoL apps
Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs announces the EPC2111, 30 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency […]
