Efficient Power Conversion Corporation expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 […]
efficientpowerconversioncorporation
Compact eGaN FETs target high power density converter apps
Efficient Power Conversion Corporation expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2066 (0.8 mΩ typical, 40 V) GaN FET. The low losses and small size of the EPC2066 make it the ideal switch for the secondary side of high power density 40 V – 60 V to […]
eGaN 100-V FETs feature lower gate charges, zero reverse-recovery losses
Efficient Power Conversion Corporation expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7 mΩ typical, 100 V) GaN FET. The EPC2071 is ideal for applications with demanding requirements for high power density performance including 48 V – 54 V input DC-DC for new servers and artificial intelligence. […]
Better thermal management of eGaN FETs
A few simple thermal management guidelines can help conduct heat away from GaN FETs. Assaad Helou, Efficient Power Conversion Enhancement-mode gallium nitride (eGaN) FETs offer high power-density with ultra-fast switching and low on-resistance, all in a compact form factor. However, the power levels these high-performance devices provide can be limited by extreme heat-flux densities. If […]
40-V, 1.3-milliohm eGaN FETs optimized for high power density apps
Efficient Power Conversion Corporation expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2067 (1.3 mΩ typical, 40 V) eGaN FET. The EPC2067 is ideal for applications with demanding requirements for high power density performance including 48 V – 54 V input servers. Lower gate charges and zero reverse […]
Power bricks get an efficiency boost with GaN
The design of an LLC resonant converter illustrates how eGaN FETs can shrink the physical size of modern supply circuitry. Alex Lidow, Efficient Power Conversion Corp. The rapid expansion of computing and telecommunications has brought a migration to a 48 V-based power architecture. Applications for this higher-voltage architecture include artificial intelligence, 5G, big data, and […]
eGaN FETs target USB-C chargers, PoL conveters
Efficient Power Conversion Corporation advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. This device is ideal for applications with demanding requirements for performance in space-constrained form factors including USB-C battery chargers and ultra-thin point-of-load (POL) converters. Other low-voltage applications benefiting from […]
eGaN 170-V FETs optimized for synchronous rectification apps
Efficient Power Conversion Corporation advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2059 (6.8 mΩ, 170 V) eGaN FET. This device is the latest in a family of 100 V – 200 V solutions suitable for a wide range of power levels and price points. […]
eGaN FETs boast lower on resistance
EPC advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of EPC2218 and EPC2204100 V eGaN FETs. The applications for these leading-edge devices include synchronous rectification, class-D audio, infotainment systems, DC-DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones. The EPC2218 (3.2 mΩ, 231 […]
Demo board provides 48-12-V dc-dc converter for high-density computing/data centers
EPC announces the availability of the EPC9143, a 300 W DC-DC voltage regulator in 16th brick size. The EPC9143 power module integrates Microchip’s dsPIC33CK digital signal controller (DSC) with the latest generation EPC2053 eGaN FETs from EPC to achieve 96% efficiency in a 48 V input to 12 V output conversion at 25 A. The […]
