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efficientpowerconversion

Dispelling Myths: Don’t believe it when they say you need a bipolar gate drive for eGaN FETs

October 3, 2022 By Andrea Gorgerino

Use of a negative gate drive can lead to a larger voltage drop during deadtime and severe losses. Andrea Gorgerino, EPC GaN devices have gone from initial R&D to mainstream designs over the last 15 years. Unfortunately, there are many misunderstandings left-over from those early-stage developments or dead-end technology branches. One of the most pernicious […]

Filed Under: FAQ, Featured, MOSFETS, Power Electronics Handbook Tagged With: efficientpowerconversion, epc, FAQ

High-current, pulsed-laser diode driver board targets lidar designs

March 16, 2021 By Redding Traiger

Efficient Power Conversion (EPC) announces the availability of the EPC9150, a 200 V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed, and accuracy of object detection are critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs […]

Filed Under: Automotive, diodes, drivers, Industrial, LED Lighting, MOSFETS, Security Tagged With: efficientpowerconversion

100-V eGaN FETs target 48-V dc-dc conversion

April 3, 2019 By Aimee Kalnoskas

100-V eGaN FETs

Efficient Power Conversion Corporation advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET. This device joins the EPC2045 (7 mΩ, 100 V), EPC2052 (13.5 mΩ, 100 V) and EPC2051 (25 mΩ, 100 V) to offer designers a comprehensive family […]

Filed Under: Transistors Tagged With: efficientpowerconversion

100-V GaN power transistors target uses in 48-V dc-dc converters

March 15, 2019 By Lee Teschler

The EPC2052 is a 100-V GaN transistor with a maximum RDS(on) of 13.5 mΩ and a 74-A pulsed output current for high-efficiency power conversion in a tiny 2.25-mm2 footprint. Applications demanding higher efficiency and power density no longer have to choose between size and performance. The EPC2052 measures just 1.50×1.50 mm (2.25 mm2). Despite the […]

Filed Under: Power Components, Semiconductor, Transistors Tagged With: efficientpowerconversion

eGaN power transistor hits 97% efficiency at 500 kHz

September 11, 2018 By Lee Teschler

EPC2051

The EPC2051 is a 100-V GaN transistor with a maximum RDS(on) of 25 mΩ and a 37-A pulsed output current for high efficiency power conversion in a tiny 1.1-mm2 footprint. Applications demanding higher efficiency and power density no longer have to choose between size and performance. The EPC2051 measures just 1.30×0.85 mm (1.1 mm2). Despite the small footprint, […]

Filed Under: MOSFETS, Power Components, Semiconductor Tagged With: efficientpowerconversion

GaN FET supplier EPC appoints Spirit Electronics as Defense/Aerospace Distributor

May 24, 2018 By jzavoda@wtwhmedia.com

eGaN power devices

To support its accelerating growth in the defense and aerospace markets, Efficient Power Conversion Corporation (EPC) is proud to announce the appointment of Spirit Electronics as a distribution partner focusing on these key market segments. Spirit Electronics, in operation since 1979 and located in Phoenix, Arizona and Irvine, California, supplies products and services to the […]

Filed Under: Power Supply News Tagged With: efficientpowerconversion, spiritelectronics

eGaN power transistors get AEC-Q101 qualification for use in harsh environments

May 1, 2018 By Aimee Kalnoskas

AEC-Q101 qualification

EPC announces successful AEC-Q101 qualification of two eGaN devices, opening a range of applications in automotive and other harsh environments. The products, EPC2202 and EPC2203, are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS ratings and will soon be followed with several more discrete transistors and integrated circuits designed for the […]

Filed Under: Transistors Tagged With: efficientpowerconversion, epc

GaN transistor handles 26-A pulsed output current thanks to RDS(on) of 65 mΩ

April 25, 2018 By Aimee Kalnoskas

GaN transistor

Efficient Power Conversion (EPC) announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or […]

Filed Under: Transistors Tagged With: efficientpowerconversion, epc

GaN-based 48 V to 12 V regulated power supply development board delivers over 1.25 kW/in3, over 96% efficiency

March 9, 2018 By Aimee Kalnoskas

GaN-based 48 V to 12 V

Efficient Power Conversion Corporation (EPC) introduces EPC9130 48 V − 12 V non-isolated, fully regulated development board. This five-phase board with 12 A per phase has a maximum output current of 60 amps, making the board capable of over 700 W. The EPC9130 provides extremely high-power density exceeding 1250 W per cubic inch, and over […]

Filed Under: Transistors Tagged With: efficientpowerconversion, epc

GaN power modules deliver over 1.4 kW/in3 for 48 – 12 V DC-DC and up to 10 MHz for PoL power conversion

March 9, 2018 By Aimee Kalnoskas

GaN power modules

Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based […]

Filed Under: Power Supplies, Transistors Tagged With: efficientpowerconversion, epc

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Featured Contributions

Robust design for Variable Frequency Drives and starters

Meeting demand for hidden wearables via Schottky rectifiers

The case for vehicle 48 V power systems

GaN reliability milestones break through the silicon ceiling

Developing power architecture to support autonomous transportation

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