By Roger Allan, contributing writer There’s good news for power supply system designers. Silicon-based power devices are making performance advances in diode, transistor, and field-effect transistor (FET) functions. But wide-bandgap semiconductor IC technologies like gallium nitride (GaN) and silicon carbide (SiC) are poised to grow rapidly, offering designers greater performance in a smaller package, making […]
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Evaluation kit helps spec eGaN FETs, ICs for multi-mode wireless power charging systems
Efficient Power Conversion Corporation (EPC) today announces the availability of a complete demonstration multi-mode wireless power charging kit, the EPC9121. The purpose of this demonstration kit is to simplify the evaluation process of using eGaN FETs and ICs for highly efficient multi-mode wireless power charging systems that can cut across any standard used in the […]
Development board doubles as amplifier stage for AirFuel Alliance Class 4 and 5 wireless power-transfer apps
Efficient Power Conversion (EPC) announces the EPC9065, a development board that can serve as the amplifier stage for AirFuelTM Alliance Class 4 and Class 5 wireless power transfer applications. This board is a Zero Voltage Switching (ZVS) differential-mode class-D amplifier development board configured at, but is not limited to, 6.78 MHz (Lowest ISM band). This […]
Half-bridge development board for eGaN PoL apps
Efficient Power Conversion Corporation (EPC) introduces the EPC9059 half-bridge development board for high current, high frequency point-of-load (POL) applications using eGaN ICs to reduce power conversion size. The EPC9059 development board has a 30 V maximum device voltage with a 50 A maximum output current. In this application two 30 V EPC2100 eGaN IC’s operating […]
Wireless Power Handbook gets second edition
Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of the Second Edition of the Wireless Power Handbook. This edition is a practical engineering handbook designed to provide power system design engineers valuable experiences and points of reference critical to understanding and designing highly efficient wireless power systems using gallium nitride transistors. As a supplement to […]
Better converter efficiency with eGaN FETs
by Alex Lidow and David Reusch, Efficient Power Conversion Corp. Gallium-nitride FET technology has improved markedly in the past five years. Power converters based on GaN FETs are living up to the promise of low power losses at an economical price. Enhancement-mode gallium-nitride (eGaN) FETs can switch at speeds ten times faster than the best […]
DC-DC converter handbook covers GaN transistors
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EPC introduces fast, small monolithic gallium nitride power transistor half bridge operating over 2 MHz
EPC announces the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. […]
Power converters with GaN
by Alex Lidow, CEO, Efficient Power Conversion Corp. It can be tricky to analyze power supply designs incorporating GaN power devices. Here are the basics of calculating losses and device currents when using these exotic semiconductors. There is a lot of activity in wide-bandgap semiconductors these days. They have the ability to operate at much […]
