EPC announces the availability of their enhancement-mode gallium nitride (GaN) devices in wafer form for ease of integration. EPC’s eGaN FETs and ICs are traditionally sold as singular chip-scale devices with solder bars or solder bumps. Chip-scale packaging is a more efficient form of packaging that reduces the resistance, inductance, size, thermal impedance, and cost […]
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eGaN FET gets automotive AEC Q101 qualification
EPC announces successful AEC Q101 qualification of the 80 V EPC2214 designed for lidar systems in the automotive industry and other harsh environments. eGaN technology has been in mass production for over nine years, accumulating billions of hours of successful field experience in automotive applications, such as lidar (Light Detection and Ranging) and radar for […]
Powering graphics processors from a 48-V bus
New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation AI platforms. Alex Lidow | Efficient Power Conversion Artificial Intelligence (AI), gaming, cloud computing, and autonomous vehicles all employ the latest generation of graphics processors (GPUs) in lieu of CPUs. The reasoning is that […]
AEC-qualified eGaN FETs boost performance in Lidar, 48-V automotive power systems
EPC announces successful AEC Q101 qualification of two additional eGaN devices, addressing a range of applications in the automotive industry and other harsh environments. The new products, EPC2206, and EPC2212 are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS and 100 VDS ratings respectively. eGaN technology has been in mass production for over eight years, accumulating billions of […]
Class 4 wireless power kit transmits up to 33 W
Efficient Power Conversion Corporation (EPC) today announces the availability of a complete class 4 wireless power kit, the EPC9129. The system can transmit up to 33 W while operating at 6.78 MHz (the lowest ISM band). The kit comes complete with two receivers, each with a regulated output − one capable of 5 W capable […]
eGaN FET handles 6.8 A in a small footprint
EL SEGUNDO, Calif. — August 2015 — Efficient Power Conversion Corporation (EPC) announces the EPC2039 power transistor, a high power density enhancement-mode gallium nitride (eGaN®) device. The EPC2039 is an extremely small, 1.82 mm2, 80 VDS, 6.8-A power transistor with a maximum RDS(on) of 22 milliohms with 5 V applied to the gate. This GaN […]
