Use of a negative gate drive can lead to a larger voltage drop during deadtime and severe losses. Andrea Gorgerino, EPC GaN devices have gone from initial R&D to mainstream designs over the last 15 years. Unfortunately, there are many misunderstandings left-over from those early-stage developments or dead-end technology branches. One of the most pernicious […]
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GaN FETs optimized for 48-V dc-dc power conversion
EPC expands the selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 100 V EPC2306 designed for 48 V DC-DC conversion used in high-density computing applications, in 48 V BLDC motor drives for e-mobility and robotics, and in solar optimizers and microinverters, and Class D Audio. The EPC2306 GaN […]
100-V, 35-A IC chipset targets 48-V DC-DC conversion tasks
EPC announces the introduction of a 100 V, 35 A integrated circuit designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones. The EPC23102 eGaN IC is capable of a maximum withstand voltage of 100 V, delivering up to 35 A load […]
Rad-hard GaN FET comes in small 6.56-mm-sq footprint
EPC announces the introduction of the EPC7004 radiation-hardened GaN FET. The EPC7004 is a 100 V, 7 mΩ, 160 APulsed, rad-hard GaN FET in a small 6.56 mm2 footprint. The EPC7004 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). The EPC7004, along with the rest […]
Rad-hard 100-V GaN transistor offers lowest on-resistance
EPC has introduced the EPC7018 radiation-hardened GaN FET. The EPC7018 is a 100 V, 3.9 mΩ, 345 APulsed, rad-hard GaN FET in a small 13.9 mm2 footprint. The EPC7018 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). The EPC7018, along with the rest of the […]
Common-source dual GaN FET features 58 mΩ RDS(on), 20-A pulsed output current
EPC announces the introduction of the EPC2221, a common source dual gallium nitride FET rated at 100 V, 58 mΩ, and 20 A pulsed current. The EPC2221 can be used in lidar systems for robots, surveillance systems, drones, autonomous cars, and vacuum cleaners. The low inductance and capacitance of the EPC2221 allow fast switching (100 […]
350-V GaN transistor features max 80 mΩ on resistance, 26-A pulsed output
EPC announces the production release of the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 80 mΩ and a 26 A pulsed output current. The EPC2050 measures just 1.95 mm x 1.95 mm. This tiny size enables power solutions that occupy ten times less area than comparable silicon solutions. Applications benefiting from […]
Rad-hard GaN transistors sport super-low on resistance
EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 APulsed, rad-hard eGaN FET in a small 13.9 mm2 footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, […]
Dual-output synchronous buck reference design board converts 9 to 24-V input to 3.3 or 5-V output
EPC announces the availability of the EPC9160, a dual output synchronous buck converter reference design board operating at 2 MHz switching frequency that converts an input voltage of 9 V to 24 V to a 3.3 V or 5 V output voltage and delivers up to 15 A continuous current for both outputs. Thanks to […]
Compact BLDC motor drive inverter design targets e-bikes, drones, robotic apps
EPC announces the availability of the EPC9167, a 3-phase BLDC motor drive inverter using the EPC2065 eGaN FET. The EPC9167 operates from an input supply voltage between 14 V and 60 V (nominal 48 V) and has two configurations – a standard unit and a high current version: The EPC9167 standard reference design board is […]
