The CoolGaN™ Drive HB 600 V G5 from Infineon Technologies AG is a family of integrated half-bridge devices that combine two 600 V GaN switches with high- and low-side gate drivers and a bootstrap diode in a single package. Designed for low-power motor drives and switched-mode power supplies, the devices support high-frequency operation with a […]
GaN
Renesas expands GaN portfolio to cover 1 V to 650 V+ range with EPC technology license
Efficient Power Conversion (EPC) has entered a licensing agreement with Renesas Electronics for EPC’s low-voltage enhancement-mode gallium nitride (eGaN) technology. Renesas will establish internal wafer fabrication for these devices and second-source select EPC GaN products currently in mass production. The agreement addresses supply-chain concerns by creating an additional qualified manufacturer for existing EPC devices. Over […]
Modular GaN reference design scales to 108 kW configurations
Efficient Power Conversion Corporation has released a 5 kW AC-to-48 V DC reference design using enhancement-mode gallium nitride power devices. The system achieves 96.5% efficiency and 116 W/in³ power density while meeting Open Rack V3 size specifications. The design consists of two stages. The EPC91107KIT front-end stage converts 240 VAC to 400 VDC using a […]
Multi-output power supply IC features 1700 V GaN switch
Power Integrations has introduced a 1700 V gallium nitride (GaN) switch, the 1700 V InnoMux-2. marking a new technical milestone in high-voltage power semiconductors. The technology is implemented in the company’s InnoMux-2 family of power supply ICs, designed for multi-output power supplies operating from high-voltage DC sources. “The new device is fabricated using our PowiGaN™ technology. […]
Reference design covers Class-D amplifier and companion power supply
GaN is being embraced in audio, enabling companies to launch better sounding, higher-performance, smaller, and more eye-catching audio systems. And GaN Systems is making it easier to reap the benefits of GaN with the introduction of the GeN2 Amplifier and SMPS Reference Design. GaN Systems released the GeN2 amplifier and companion power supply reference design […]
Better high-frequency power design through EM simulation
Here’s how a 3D EM simulation can be used to accurately gauge gate-driver trace inductance. JOHN RICE | TEXAS INSTRUMENTS INC. HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) were first introduced in the early 1980s and are touted for their exceptional switching qualities. These so-called heterojunction, field effect transistors (FETs) were originally developed for high-frequency RF power […]
