Power Integrations has introduced a 1700 V gallium nitride (GaN) switch, the 1700 V InnoMux-2. marking a new technical milestone in high-voltage power semiconductors. The technology is implemented in the company’s InnoMux-2 family of power supply ICs, designed for multi-output power supplies operating from high-voltage DC sources. “The new device is fabricated using our PowiGaN™ technology. […]
GaN
Reference design covers Class-D amplifier and companion power supply
GaN is being embraced in audio, enabling companies to launch better sounding, higher-performance, smaller, and more eye-catching audio systems. And GaN Systems is making it easier to reap the benefits of GaN with the introduction of the GeN2 Amplifier and SMPS Reference Design. GaN Systems released the GeN2 amplifier and companion power supply reference design […]
Better high-frequency power design through EM simulation
Here’s how a 3D EM simulation can be used to accurately gauge gate-driver trace inductance. JOHN RICE | TEXAS INSTRUMENTS INC. HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) were first introduced in the early 1980s and are touted for their exceptional switching qualities. These so-called heterojunction, field effect transistors (FETs) were originally developed for high-frequency RF power […]
