By Roger Allan, contributing writer There’s good news for power supply system designers. Silicon-based power devices are making performance advances in diode, transistor, and field-effect transistor (FET) functions. But wide-bandgap semiconductor IC technologies like gallium nitride (GaN) and silicon carbide (SiC) are poised to grow rapidly, offering designers greater performance in a smaller package, making […]
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GaN power devices get wider distribution
Richardson RFPD, Inc. announced an agreement with GaN Systems Inc. Under the terms of the agreement, Richardson RFPD will sell GaN Systems’ GaN on Si power devices on a global basis, excluding Israel. GaN Systems manufactures a range of gallium nitride high-power transistors for consumer, enterprise, industrial, solar/wind/smartgrid, and transportation power-conversion applications. “GaN Systems adds […]
Ultra-compact EV charger made with GaN transistors
Automotive electronics specialist HELLA, in collaboration with GaN Systems have developed a Level-2 electric vehicle (EV) charger prototype with efficiencies exceeding 97% at an unprecedented 2.6 kW/l power density. Prior to this achievement, Level-2 EV chargers reached maximum efficiencies of 94%. Using GaN Systems’ 60 A, 650 V GS66516T switches in an innovative two-stage architecture, […]
Half-Bridge eval board simplifies GaN transistor testing
GaN Systems has announced its new Half-Bridge Evaluation Board which demonstrates the performance of its GaN enhancement mode power semiconductors in real power circuits. The fully functional GS66508T-EVBHB Evaluation Board is easily configured into any half-bridge-based topology, including synchronous boost and buck conversion modes, as well as pulsed switching to evaluate transistor waveforms. Accompanied by […]
