GaN Systems announced a new reference design for a high power density 65W QR (quasi-resonant) charger targeted for the consumer electronics market, including mobile phone and laptop computer applications. The reference design comprises of an operating charger and design documentation – providing a complete and simple to implement solution that assists customers in accelerating product development, roll out, and […]
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GaN Systems launches online showcase highlighting new power products for multiple applications
GaN Systems launched its Virtual Experience site displaying the latest technology innovations that are using GaN transistors as a cornerstone technology for smaller, lighter, and more efficient power electronics systems. With event cancellations and postponements, GaN Systems’ Virtual Experience will be ongoing, and is offering visitors an online showcase of new transistor products and power modules, reference […]
AC adapter reference design handles 300 W with GaN HEMTs
GaN Systems and ON Semiconductor announced the availability of the world’s highest power density 300 watt AC Adapter Reference Design using GaN Systems’ 650 V, 15 A GaN E-HEMTs and multiple ON Semiconductor controller and driver ICs: NCP51820, NCP13992, NCP1616, and NCP4306. This complete system reference design is highly versatile and low cost, allowing designers to easily develop and bring to […]
Half-bridge GaN eval board fits in a small footprint
GaN Systems and ON Semiconductor announced the availability of a high-speed, half-bridge GaN daughter board using GaN Systems’ 650 V, 30 A GaN E-HEMTs and ON Semiconductor’s NCP51820 high-speed gate driver evaluation board. This evaluation board is developed for existing and new PCB designs and allows designers to easily evaluate GaN in existing half−bridge or full−bridge power […]
Common misconceptions about the MOSFET body diode
Engineers who design power circuits around wide-bandgap semiconductors frequently make costly mistakes that relate to the switching behavior of transistors. Julian Styles | GaN Systems We need to face an awkward and embarrassing truth about ourselves in the world of power electronics. I’d like to ask you to try to be completely open and honest […]
GaN power devices, Part 1: Principles
Power devices based on gallium nitride (GaN) are rapidly becoming a viable, higher-performance alternative to silicon MOSFETs due to their higher efficiency and other favorable attributes. In recent years, discrete power-switching and power-handling devices based on gallium nitride (GaN) material have become practical and available, and these devices are now found in many power supplies […]
GaN E-HEMT transistors handle 150 A/650 V for EV, energy storage
GaN Systems announced the industry’s highest current 650 V GaN E-HEMTs with the addition of the 150 A, 650 V (GS-065-150-1-D) and the 80 A, 650 V (GS-065-080-1-D) to its line of GaN power transistors. In particular, the 150 A, 650 V transistor is unmatched on both current (80 A at 22 mΩ) and resistance (50 […]
GaN power transistors cover 3.5-A to 11-A range
The GS-065 low current (3.5 A to 11 A) transistor line, developed for sub-1k W power applications, is targeted for consumer level power supply products such as ac adapters for gaming and workstation laptops, TV power, LED lighting, wireless power systems, and appliance motor drives. This new transistor line leverages GaN Systems’ technology leadership in […]
Richardson RFPD offer design support power amps for wireless charging
Richardson RFPD, Inc. announced today the availability and full design support capabilities for two new evaluation boards from GaN Systems Inc. The new power amplifiers are designed for the growing wireless charging market and feature gallium nitride (GaN) technology that enables smaller, lighter, lower-cost, and more efficient power systems. The 100 W power amplifier GSWP100W-EVBPA is […]
