The GS-065-018-2-L power transistor expands GaN System’s high-performance, low-cost transistor portfolio and features lower on-resistance, increased robustness and thermal performance, and an 850V VDS (transient) rating. The new addition empowers designers to improve further efficiency, thermal management, and power density performance while increasing design flexibility and cost-effectiveness to meet new demands from consumer, industrial, and […]
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Using simulation to optimize GaN-powered designs
Comparisons of transistor device models and simulation techniques illustrate which approach works best for specific design scenarios. Lei Kou, Lucas Lu, GaN Systems When designing a new system based on Gallium Nitride (GaN) power transistors, simulation provides engineers with a powerful design optimization tool. Through simulation, designers can estimate system efficiency, choose the appropriate device […]
Gains from GaN
Energy efficiencies made possible by gallium-nitride semiconductors are starting to impact every day products. Paul Wiener • GaN Systems, Inc. | Ron Stull • CUI, Inc. Wide-bandgap power semiconductors are in production now and recommended for new designs. The earliest adopters among power supply OEMs have already begun introducing new product lines employing this technology […]
Reference design covers GaN 65-W quasi-resonant charger targeting consumer apps
GaN Systems announced a new reference design for a high power density 65W QR (quasi-resonant) charger targeted for the consumer electronics market, including mobile phone and laptop computer applications. The reference design comprises of an operating charger and design documentation – providing a complete and simple to implement solution that assists customers in accelerating product development, roll out, and […]
GaN Systems launches online showcase highlighting new power products for multiple applications
GaN Systems launched its Virtual Experience site displaying the latest technology innovations that are using GaN transistors as a cornerstone technology for smaller, lighter, and more efficient power electronics systems. With event cancellations and postponements, GaN Systems’ Virtual Experience will be ongoing, and is offering visitors an online showcase of new transistor products and power modules, reference […]
AC adapter reference design handles 300 W with GaN HEMTs
GaN Systems and ON Semiconductor announced the availability of the world’s highest power density 300 watt AC Adapter Reference Design using GaN Systems’ 650 V, 15 A GaN E-HEMTs and multiple ON Semiconductor controller and driver ICs: NCP51820, NCP13992, NCP1616, and NCP4306. This complete system reference design is highly versatile and low cost, allowing designers to easily develop and bring to […]
Half-bridge GaN eval board fits in a small footprint
GaN Systems and ON Semiconductor announced the availability of a high-speed, half-bridge GaN daughter board using GaN Systems’ 650 V, 30 A GaN E-HEMTs and ON Semiconductor’s NCP51820 high-speed gate driver evaluation board. This evaluation board is developed for existing and new PCB designs and allows designers to easily evaluate GaN in existing half−bridge or full−bridge power […]
Common misconceptions about the MOSFET body diode
Engineers who design power circuits around wide-bandgap semiconductors frequently make costly mistakes that relate to the switching behavior of transistors. Julian Styles | GaN Systems We need to face an awkward and embarrassing truth about ourselves in the world of power electronics. I’d like to ask you to try to be completely open and honest […]
GaN power devices, Part 1: principles
Power devices based on gallium nitride (GaN) are rapidly becoming a viable, higher-performance alternative to silicon MOSFETs due to their higher efficiency and other favorable attributes. In recent years, discrete power-switching and power-handling devices based on gallium nitride (GaN) material have become practical and available, and these devices are now found in many power supplies […]
GaN E-HEMT transistors handle 150 A/650 V for EV, energy storage
GaN Systems announced the industry’s highest current 650 V GaN E-HEMTs with the addition of the 150 A, 650 V (GS-065-150-1-D) and the 80 A, 650 V (GS-065-080-1-D) to its line of GaN power transistors. In particular, the 150 A, 650 V transistor is unmatched on both current (80 A at 22 mΩ) and resistance (50 […]
