Infineon has released the EasyPACK C, the latest addition to its EasyPACK family of power modules. The first products in this series use 1200V CoolSiC MOSFET G2 devices combined with Infineon’s.XT interconnection technology. These silicon carbide (SiC) modules are designed for high-efficiency, long-lifetime operation in industrial systems such as fast DC electric vehicle charging, megawatt […]
infineontechnolgiesag
SPICE integration models gate driver effects on switching losses
The Infineon Power Simulation Platform (IPOSIM) from Infineon Technologies AG is widely used to calculate losses and thermal behavior of power modules, discrete devices, and disc devices. The platform now integrates a SPICE-based model generation tool that incorporates external circuitry and gate driver selection into system-level simulations. The tool delivers more accurate results for static, […]
Reference board delivers 12-kilowatt thermal design power with SiC JFET
Infineon Technologies AG has launched a 48-volt smart eFuse family and a reference board for hot-swap controllers designed for 400-volt and 800-volt power architectures in AI data centers. The products address power path protection requirements for high-power AI server systems operating at voltages from 48V to 400V and 800V. The eFuse ICs XDP730, XDP720, XDP721, […]
Dual-phase module delivers 140 A in 9 x 10 x 5 mm package
Infineon Technologies AG is launching the OptiMOS TDM22545T dual-phase power module, the industry’s first trans-inductance voltage regulator (TLVR) module specifically designed for high-performance AI data centers. The module’s proprietary TLVR inductance architecture minimizes the number of output capacitors, reducing the overall size of the voltage regulator (VR) and significantly lowering material costs (bill of materials; […]
40 V MOSFETs provide threefold wider operating area
Infineon Technologies AG is launching the OptiMOS 7 power MOSFET family for industrial and consumer markets, extending the already existing OptiMOS 7 automotive portfolio. Designed to provide the best fitting solution in their respective use case, the new OptiMOS 7 family offers products specifically for high-performance switching, motor-drives, or RDS(ON)-focused applications. The OptiMOS 7 25 […]
12 kW reference design targets AI data centers
Infineon Technologies AG is introducing a 12 kW reference design for high-performance power supply units (PSUs), specifically designed for AI data centers and server applications. The reference design offers high efficiency and high-power density, and leverages all relevant semiconductor materials: silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). It is aimed at research and […]
150 V MOSFET family offers 0.4 K/W thermal resistance
Infineon Technologies AG has expanded its OptiMOS 6 portfolio by introducing the Automotive 150 V MOSFET family. These new devices are specially developed to meet the demanding requirements of modern electric vehicles and are available in three advanced package options: TOLL, TOLG, and TOLT. The new automotive MOSFET family, based on Infineon’s 6th generation OptiMOS […]
75 mΩ MOSFETs target AI servers and electric vehicle charging applications
Infineon Technologies AG is expanding its CoolSiC MOSFET 650V G2 portfolio with 75 mΩ variants designed for compact power systems. The devices are available in TOLL, ThinTOLL 8×8, TOLT, D2PAK, TO247-3, and TO247-4 package options, supporting both Top Side Cooling and Bottom Side Cooling approaches for switching mode power supplies in AI servers, renewable energy […]
Top‑side‑cooled 1200 V MOSFETs reduce thermal resistance and support compact layouts
Infineon Technologies AG has introduced its CoolSiC MOSFETs 1200 V G2 in a top‑side‑cooled (TSC) Q‑DPAK package for industrial power applications such as electric vehicle chargers, solar inverters, uninterruptible power supplies, motor drives, and solid‑state circuit breakers. The CoolSiC 1200 V G2 devices achieve up to 25% lower switching losses for equivalent RDS(on) ratings compared […]
GaN HEMT transistors target space applications with hermetically sealed packaging
Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan technology. Designed to operate in harsh space environments, the company’s new product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the […]
