Infineon Technologies AG launches new current ratings for its EconoDUAL 3 portfolio with TRENCHSTOP IGBT7 chips. With the broad range of current classes from 300 A up to 900 A, the portfolio offers inverter designers a high degree of flexibility while also providing increased power density and performance. In addition to solar and drive applications, the portfolio […]
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Volkswagon ID.4 tour highlights vehicle electrification and charging infrastructure
Every seventh car produced today is operating on a form of electrification. Demonstrating the power and convenience of an electric vehicle (EV), Volkswagen of America has teamed up with long-distance driving expert Rainer Zietlow for the VW ID.4 USA tour that recently kicked off at Volkswagen of America’s headquarters in Herndon, VA. Infineon Technologies AG […]
Flyback LED controllers for LEDs supporting flicker-free dimming
Cost-effective dimmable and intelligent LED systems are expected to increase the market share disproportionately in the coming years. Introducing the ICL8800, ICL8810, and ICL8820 single-stage flyback LED controllers for constant output voltages, Infineon Technologies AG addresses the need of LED driver manufacturers in this regard. With their unique features, the ICs meet the necessary performance requirements for LED lighting applications, such as LED […]
650-V IGBTs target PFC apps in A/C, welding
Infineon Technologies AG introduces the new 650 V TRENCHSTOP 5 WR6 family in discrete housing. The family comes in a TO-247-3-HCC package and offers a broad portfolio comprising 20 A, 30 A, 40 A, 50 A, 60 A, and 70 A current ratings. The devices can easily be used for replacing previous technologies like Infineon’s […]
Single-channel isolated gate drivers target hard-switching applications
Infineon Technologies AG expands its growing portfolio of single-channel gate-driver ICs. The new EiceDRIVER 1EDB family of single-channel gate-driver IC provides galvanic input-to-output isolation of 3 kV rms (UL 1577) that ensures rugged ground-loop separation. Their common-mode transient immunity (CMTI) exceeds 300 V/ns, making these devices the perfect choice for hard switching applications enabling numerous topologies. The new […]
Power modules combine 600-V GaN switches with gate drivers
Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable excellent efficiency and high switching frequency, starting a new era in power electronics. To support this development, Infineon Technologies AG adds the new CoolGaN IPS family of integrated power stage (IPS) products to its broad portfolio of WBG power devices. The initial […]
Hybrid flyback controller optimized for USB chargers/adapters
Rapid technology and market developments in the fast charger and adapter market continuously challenge designers of power supply systems. To meet the increasing demand for higher power density and energy efficiency, Infineon Technologies AG expands its XDP family by adding the first application-specific standard product based on an asymmetric half-bridge flyback topology. Available in a […]
Automotive power modules based on SiC MOSFETs
Infineon Technologies AG introduced a new automotive power module with CoolSiC MOSFET technology. At this year’s virtual PCIM trade show, Infineon will present the new HybridPACK Drive CoolSiC, a full-bridge module with 1200 V blocking voltage optimized for traction inverters in electric vehicles (EV). The power module is based on the automotive CoolSiC trench MOSFET […]
Compact gate drivers integrate a two-level slew rate control
The highest efficiency is a key requirement for today’s power electronics. Therefore, Infineon Technologies AG introduces its latest isolated EiceDRIVER 2L-SRC Compact (1ED32xx) gate driver family in a compact form factor. The gate driver family comes in an 8 mm wide-body package to ensure easy design-in and integrates a two-level slew rate control, which significantly […]
SiC 1.2-kV MOSFET power modules target high-power-density apps
Infineon Technologies AG has upgraded the EasyDUAL CoolSiC MOSFET modules with a new aluminum nitride (AIN) ceramic. The devices come in a half-bridge configuration with an on-state resistance (RDS(on)) of 11 mΩ in an EasyDUAL 1B package and 6 mΩ in an EasyDUAL 2B package. With high-performance ceramic, the 1200 V devices are suitable for […]
