Innoscience Technology announced the INS1001DE which is designed to drive single-channel GaN HEMTs in either low-side, high-side, or secondary-side SR applications. The new gate driver has dual non-inverting and inverting PWM inputs, enabling flexible operation with the controller, optocoupler, and digital isolator. Independent Pull-up and Pull-down outputs facilitate the control of turn-on and turn-off speeds. Driver […]
innoscience
GaN gate driver optimizes e-mode GaN HEMT performance
Innoscience Technology announced the INS1001DE which is designed to drive single-channel GaN HEMTs in either low-side, high-side, or secondary-side SR applications. The new gate driver has dual non-inverting and inverting PWM inputs, enabling flexible operation with the controller, optocoupler, and digital isolator. Independent Pull-up and Pull-down outputs facilitate the control of turn-on and turn-off speeds. Driver […]
650 V GaN power transistors set to boost 80+ Titanium Plus PSU efficiency standards
Innoscience announced new, low RDS(on), high-power devices in its ever-broadening family of 650V/700V enhancement-mode power transistors. New 30, 50, and 70mΩ RON parts are available in the industry-standard TOLL (TO-Leadless) package. The 70mΩ part is also available as an 8×8 DFN part. Members of a new high-power product platform from Innoscience, the new INN650TA0x0AH and […]
700 V GaN HEMT IC family offers enhanced efficiency, design simplicity for USB-PD designs
Innoscience announced a family of four new integrated devices that combine power GaN HEMT, driver, current sense, and other functions within a single, industry-standard QFN 6x8mm package. The 700V ISG610x SolidGaN devices cover the range from 140mΩ to 450mΩ and save PCB space and BOM count while increasing efficiency and simplifying design for applications including […]
100 V, bi-directional devices added to GaN IC line
Innoscience Technology has launched a new 100V bi-directional member of the company’s VGaN IC family. The first family of VGaN devices rated 40V with a wide on-resistance range (1.2mOhm – 12mOhm) have been successfully deployed in the USB OVP of mobile phones such as OPPO, OnePlus, etc. The new 100V VGaN (INV100FQ030A) can be employed […]
650 V GaN HEMTs now offered with 80mΩ RDS(on)
Innoscience Technology announced a new low RDS(on) 650V E-mode GaN HEMT devices. INN650D080BS power transistors have an on-resistance of 80mΩ (60mΩ typical) in a standard 8×8 DFN package, enabling higher power applications, for example in totem pole LLC architectures or fast battery chargers. Thanks to Innoscience’s innovative strain enhancement layer, InnoGaN devices feature low specific RDS(ON) as […]
Technical papers demonstrate 15 V and 650 V GaN power device performance and reliability data
Innoscience Technology will present two papers at the prestigious IEEE International Symposium on Power Semiconductor Devices (ISPSD) conference in Vancouver, Canada, May 22-25. The first paper systematically evaluates the reliability and switching lifetime of a 650-V commercial GaN-on-Si HEMT fabricated on a 200mm (8-inch) CMOS-compatible process platform for a high-density PFC Boost power converter application. Innoscience’s […]
8-inch GaN-on-Si device maker signs with WPG
Innoscience Technology has signed a global distribution agreement with WPG Holdings (WPG), giving customers in all parts of the world access to Innoscience’s leading high and low voltage normally-off (enhancement mode) GaN HEMTs. Dr Denis Marcon, General Manager, Innoscience Europe comments: “Our aim is to ensure that every power electronics designer – no matter where they […]
140-W supply design employs high- and low-voltage GaN switches to boost efficiency
Innoscience Technology announced a new ultra-high-density 140W power supply demo that uses the company’s high- and low-voltage GaN HEMT devices to achieve efficiencies of over 95% (230VAC; 5V/28A). Measuring just 60x60x22mm (2.4×2.4×0.9in) the PSU has a class-leading power density of 1.76W/cm3 (29W/in3). The 140W 300kHz AC/DC adapter uses a CRM Totem Pole PFC + AHB […]
Dedicated 8-inch, GaN-on-Si FET producer opens locations in US and Europe
Innoscience Technology who focuses on creating a global energy ecosystem based on high-performance, low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions, today announced the official launch of its international operations in the USA and Europe. Headquartered in Suzhou, China, Innoscience is now poised to support customers through the addition of design and sales support facilities in Santa Clara, […]
