The JEDEC Solid State Technology Association has released JEP198, a new guideline document for assessing the reliability of Gallium Nitride (GaN) power conversion devices. The document, crafted by the JC-70.1 Gallium Nitride Subcommittee, is now freely accessible for download on the JEDEC website.JEP198 offers a framework for evaluating the Time Dependent Breakdown (TDB) reliability of […]
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JEDEC Wide Bandgap Power Semiconductor Committee publishes GaN power FETs document
JEDEC Solid State Technology Association announces the publication of JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power Conversion Devices. The first publication developed by JEDEC’s newest main committee, JC-70 Wide Bandgap Power Electronic Conversion Semiconductors, JEP173 is available for free download from the JEDEC website. JEP173 addresses a key need of the user community […]
New JEDEC Committee for wide bandgap power semiconductors invites industry participation
JEDEC Solid State Technology Association announces the successful launch of its newest committee: JC-70 Wide Bandgap Power Electronic Conversion Semiconductors. JC-70 held its first meeting in late October with twenty-three member companies, led by committee and subcommittee chairs from Infineon Technologies, Texas Instruments, Transphorm, and Wolfspeed, a Cree Company. Committee members include industry leaders in power […]
New JEDEC committee to set standards for wide bandgap power semiconductors
JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the formation of a new JEDEC committee: JC-70 Wide Bandgap Power Electronic Conversion Semiconductors. Led by interim chairs from Infineon, Texas Instruments, and Wolfspeed, a Cree Company, the new JC-70 committee will initially have two subcommittees: Gallium Nitride […]
