The i1R ORing FET modules from TDK-Lambda are MOSFET-based devices rated for 60Vdc input and up to 60A or 80A operation, designed to replace diodes in redundant or parallel power supply systems. The modules feature a 500 ns turn-off response, low on-resistance down to 1.5 mΩ and a compact 1 x 1 in. package, reducing […]
MOSFET
5th-generation SiC MOSFET technology targets a 1200 V device platform
Navitas has introduced a new 5th-generation silicon carbide MOSFET technology platform for 1200 V power conversion designs. The trench-assisted planar structure is designed to improve switching and conduction performance compared to the prior 1200 V generation. Applications include AI data centers, grid and energy infrastructure, and industrial electrification. Reported performance changes include a 35% improvement […]
SiC MOSFET modules use single switch and low-side chopper configurations
The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an industry-standard SOT-227 form factor for medium to high frequency power applications. The modules support single switch and low-side chopper configurations with continuous drain currents from 50 A to 200 A and on-resistance as low as 12.1 […]
Compact MOSFET packaging reduces footprint and supports optical inspection
Renesas Electronics Corporation introduced new 100V high-power N-Channel MOSFETs that deliver industry-leading high-current switching performance for applications such as motor control, battery management systems, power management, and charging. End products include electric vehicles, e-bikes, charging stations, power tools, data centers, uninterruptable power supplies (UPS,) and more. Renesas has developed a new MOSFET wafer manufacturing process […]
What is the MOSFET body diode?
Unlike virtually every other active device, the power MOSFET is unusual in that its schematic symbol includes a parasitic device – the body diode. The body diode is intrinsic to the device’s structure. It remains despite a number of fundamental changes in power MOSFET structure and device designs including the two most common types today […]
