Nexperia announced two PESD5V0R1BxSF extremely low clamping and capacitance bidirectional Electrostatic Discharge (ESD) protection diodes. Based on Nexperia’s TrEOS technology with active silicon-controlled rectification, the devices ensure optimal signal integrity for USB4 (up to 2 x 20 Gbps) data lines on laptops and peripherals, smartphones, and other portable electronic equipment. The PESD5V0R1BDSF is optimized for low clamping […]
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Power bipolar transistors handle up to 8 A and 100 V
Nexperia announced nine new power bipolar transistors, extending its portfolio of products in the thermally and electrically advantageous DPAK package to cover applications from 2 A to 8 A and from 45 V up to 100 V. The new MJD series parts are pin-to-pin compatible with other MJD devices in DPAK-package, and they also offer significant […]
650 V GaN FETs offers RDS(on) performance down to to 35 mΩ
Nexperia announced the volume availability of its second-generation 650 V power GaN FET device family, offering significant performance advantages over previous technologies and competitive devices. With RDS(on) performance down to 35 m§Ł (typical), the new power GaN FETs target single-phase AC/DC and DC/DC industrial switched-mode power supplies (SMPS), ranging from 2 kW to 10 kW, especially […]
Half-bridge automotive MOSFETs offered space-saving LFPAK56D package
Nexperia announced a series of half-bridge (high side & low side) automotive MOSFETs constructed in the space-saving LFPAK56D package format. The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including motor drives and DC/DC converters. The new package provides a half-bridge solution in one device, occupying 30% lower PCB […]
ESD-suppression devices protect high-speed data lines
Nexperia announced three new TrEOS protection devices that provide the most compact method to suppress ESD in USB3.2, HDMI2.1, and other high-speed data lines. The new PUSB3BB2DF, PESD5V0C2BDF, PESD4V0Z2BCDF devices provide best-in-class ESD protection and system robustness by combining high RF performance with very low clamping and very high surge capability. The new parts […]
80 V RETs feature overhead to handle spikes and pulses
Nexperia announced the industry’s first 80 V RET (Resistor-Equipped Transistor) family. These new RETs or ‘digital transistors’ provide enough headroom for use in 48 V automotive board net (e.g. mild hybrid and EV cars) and other higher voltage circuits which are often subject to large spikes and pulses that previous 50 V parts cannot handle. […]
LED drivers in SOT1118D package features side-wettable flanks
Nexperia announced a new range of LED drivers in the space-saving DFN2020D-6 (SOT1118D) package. This case style features side-wettable flanks (SWF) which facilitate the use of AOI (automated optical inspection), and improve reliability. This is the first time LED drivers have been available in this beneficial package. The new leadless devices join Nexperia’s wide range of LED […]
Miniature common mode filters combine wide differential bandpass with ESD protection
Nexperia, the expert in essential semiconductors, has announced its new PCMFxHDMI2BA-C, a combined, highly efficient, common mode filter and ESD protection device with the widest 10 GHz differential bandwidth. It is suitable for the latest HDMI 2.1 standard up to 12G FRL, where eye-diagram tests were passed even with “worst cable model”. This highly integrated PCMFxHDMI2BA-C device provides excellent common […]
Newark to handle Nexperia power GaN FETS for reduced power loss in EVs, 5G and IoT
Electronics distributor Newark now handles Nexperia’s new-to-market, innovative Power Gallium Nitride (GaN) FET range. GaN FET products deliver improved density and efficient power usage in a small form factor, enabling the development of efficient systems at a lower cost, and providing the potential to transform power performance in electric vehicles, 5G communications, IoT and more. […]
Next-gen, 650 V GaN devices in copper-clip SMD package deliver high-efficiency to automotive, industrial apps
Nexperia has announced a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging. Devices achieve superior switching FOMs and on-state performance with improved stability, and simplify application designs thanks to their cascode configuration which eliminates the need for complicated drivers […]
