onsemi introduced “EliteSiC” as the name of its silicon carbide (SiC) family. This week, the company will showcase three new members of the family – the 1700 V EliteSiC MOSFET and two 1700 V avalanche-rated EliteSiC Schottky diodes – at the Consumer Electronics Show (CES) in Las Vegas. The new devices provide reliable, high-efficiency performance for energy […]
onsemi
650 V SiC MOSFET is first in TO-LeadLess package
onsemi announced the world’s first TO-Leadless (TOLL) packaged silicon carbide (SiC) MOSFET at PCIM Europe. The transistor addresses the rapidly growing need for high-performance switching devices that are suitable for designs with high levels of power density. Until recently, SiC devices had been supplied in D2PAK 7-lead packages which required significantly more space. With a footprint of […]
Mixed-signal totem pole controller targets ultra-high density offline power supplies
onsemi introduced its latest mixed-signal controller dedicated to bridgeless totem-pole PFC (TP PFC) topology. The NCP1681targets ultra-high-density offline power supplies. Building upon the success of the NCP1680, which is suited for designs up to 350 W, the new controller extends the power capability into the kilowatt range. In the past, TP PFC designs required the use […]
MOSFETs enable power supplies to meet 80 PLUS Titanium efficiency
onsemi announced its new 600 V SUPERFET V family of MOSFETs. The high-performance devices enable power supplies to meet demanding efficiency regulations such as 80 PLUS Titanium, especially at the highly challenging 10% load condition. As part of the 600 V SUPERFET family, three product groups – FAST, Easy Drive, and FRFET – are optimized […]
100-V bridge power stage module targets half-bridge and full-bridge DC-DC converters
ON Semiconductor has launched the FDMF8811, the industry’s first 100 V Bridge Power Stage module for half-bridge and full-bridge isolated dc-dc converters. The 25 A-rated device integrates a 120 V driver IC, a bootstrap diode, and two highly efficient power MOSFETs in a PQFN-36 package. The FDMF8811 reduces the board area required for dc-dc converter […]
600-V intelligent power modules handle motor control, industrial uses
ON Semiconductor has launched new intelligent power module (IPM) technologies for industrial power management and motor control applications. Reinforcing the company’s position as a leading supplier of IPMs, the company’s new STK57FU394AG-E (15A) and STK5MFU3C1A-E (30A) are advanced 600 V IPMs that integrate a power factor correction (PFC) converter, three-phase inverter output stage, pre-drive circuitry […]
Battery charge controller detects battery technology, adjusts charge profile to compensate
ON Semiconductor has introduced a highly integrated single chip power bank solution for the development of next generation Li-Ion powered products. The LC709501F total Li-Ion battery solution offers broad power and voltage/current output range of 5 volt (V), 9 V and 12 V operation, with a maximum charge/discharge capability of up to 30 watts (W) […]
1.2-kV IGBTs boast super-low switching losses
ON Semiconductor has introduced a new series of insulated gate bipolar transistors (IGBTs) that use its proprietary Ultra Field Stop trench technology. The NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are designed to deliver elevated levels of operational performance in order to meet the exacting demands of modern switching applications (Ets). These 1200 V devices are able to achieve total […]
ON Semiconductor Demonstrates New Qualcomm Quick Charge 3.0 Compliant Charger
ON Semiconductor (Nasdaq: ON), driving energy efficiency innovations, has introduced a reference design implementing the new Qualcomm® Quick Charge™ 3.0 protocol. The new protocol provides significant efficiency improvements over the existing Quick Charge 2.0 solution. The high efficiency, small form factor reference design supports the Quick Charge 3.0 High Voltage Dedicated Charging Port (HVDCP) Class […]
Using PowerPhase MOSFETs in Synchronous Buck VR Applications
Most of voltage regulators are still using discrete solutions like SO8-FL 5 x 6 mm2 package. With advancement of Si technology and packaging, MOSFET can achieve a switching transition of less than 10nS, which is equivalent to di/dt of more than 1A/nS New PowerPhase packages enable faster switching by minimizing package parasitic inductances. While the […]
