onsemi has introduced its latest generation of silicon and silicon carbide hybrid Power Integrated Modules (PIMs) in the F5BP package, designed to enhance the power output of utility-scale solar string inverters and energy storage system (ESS) applications. These new modules deliver increased power density and efficiency within the same footprint as their predecessors, allowing a […]
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PIMs now available for power conversion stages in DC fast charging and ESS applications
Today onsemi announced the availability of nine new EliteSiC Power Integrated Modules (PIMs) enabling bidirectional charging capabilities for DC ultra-fast electric vehicle (EV) chargers and energy storage systems (ESS). The silicon carbide-based solutions will dramatically improve system cost with higher efficiency and simpler cooling mechanisms that can reduce size by up to 40% and weight […]
1200 V SiC MOSFETs deliver high power density for EV and energy infrastructure apps
onsemi announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics designers to achieve best-in-class efficiency and lower system cost. The new portfolio includes EliteSiC MOSFETs and modules that facilitate higher switching speeds to support the growing number of 800 V electric vehicle (EV) on-board […]
Simulation tool simplifies product selection at early stages of development cycle
onsemi announced a breakthrough in simulation tools for onsemi’s EliteSiC Silicon Carbide (SiC) product family and its applications. The company launched the online Elite Power Simulator and Self-Service PLECS Model Generator, which provide meaningful insights for complex power electronic applications through system-level simulations at an early stage of the development cycle. The tools save power electronic engineers time by […]
1200 V IGBTs for high-power infrastructure applications
onsemi announced a new range of ultra-efficient 1200 V insulated-gate bipolar transistors (IGBTs) that minimize conduction and switching losses at a performance level that is industry-leading in the market. Intended to enhance efficiency in fast switching applications, the new devices will be primarily used in energy infrastructure applications like solar inverters, uninterruptible power supplies (UPS), […]
SiC devices provide high-efficiency for energy infrastructure and industrial apps
onsemi introduced “EliteSiC” as the name of its silicon carbide (SiC) family. This week, the company will showcase three new members of the family – the 1700 V EliteSiC MOSFET and two 1700 V avalanche-rated EliteSiC Schottky diodes – at the Consumer Electronics Show (CES) in Las Vegas. The new devices provide reliable, high-efficiency performance for energy […]
650 V SiC MOSFET is first in TO-LeadLess package
onsemi announced the world’s first TO-Leadless (TOLL) packaged silicon carbide (SiC) MOSFET at PCIM Europe. The transistor addresses the rapidly growing need for high-performance switching devices that are suitable for designs with high levels of power density. Until recently, SiC devices had been supplied in D2PAK 7-lead packages which required significantly more space. With a footprint of […]
Mixed-signal totem pole controller targets ultra-high density offline power supplies
onsemi introduced its latest mixed-signal controller dedicated to bridgeless totem-pole PFC (TP PFC) topology. The NCP1681targets ultra-high-density offline power supplies. Building upon the success of the NCP1680, which is suited for designs up to 350 W, the new controller extends the power capability into the kilowatt range. In the past, TP PFC designs required the use […]
MOSFETs enable power supplies to meet 80 PLUS Titanium efficiency
onsemi announced its new 600 V SUPERFET V family of MOSFETs. The high-performance devices enable power supplies to meet demanding efficiency regulations such as 80 PLUS Titanium, especially at the highly challenging 10% load condition. As part of the 600 V SUPERFET family, three product groups – FAST, Easy Drive, and FRFET – are optimized […]
100-V bridge power stage module targets half-bridge and full-bridge DC-DC converters
ON Semiconductor has launched the FDMF8811, the industry’s first 100 V Bridge Power Stage module for half-bridge and full-bridge isolated dc-dc converters. The 25 A-rated device integrates a 120 V driver IC, a bootstrap diode, and two highly efficient power MOSFETs in a PQFN-36 package. The FDMF8811 reduces the board area required for dc-dc converter […]
