ON Semiconductor has introduced a highly integrated single chip power bank solution for the development of next generation Li-Ion powered products. The LC709501F total Li-Ion battery solution offers broad power and voltage/current output range of 5 volt (V), 9 V and 12 V operation, with a maximum charge/discharge capability of up to 30 watts (W) […]
onsemiconductor
ICs provide sinusoidal drive for 3-phase BLDC motors
ON Semiconductor has announced three new devices for driving 3- phase BLDC motors via 180 degree sinusoidal waveforms. Designed for use in cooling fans of household appliances such as refrigerators, as well as games consoles and computing equipment, the LV8811, LV8813, and LV8814 have voltage ranges of 3.6 volts (V) to 16 V, 6 to […]
SuperFET III MOSFETs sport 44% lower RDS(on)
Fairchild Semiconductor, now part of ON Semiconductor), today introduced its SuperFET III family of 650V N-channel MOSFETs, the company’s new generation of MOSFETs that meet the higher power density, system efficiency and exceptional reliability requirements of the latest telecom, server, electric vehicle (EV) charger and solar products. The SuperFET III MOSFET family combines best-in-class reliability, low EMI, excellent […]
Littelfuse to Acquire TVS diode/IGBT/thyristor Portfolio From ON Semiconductor
Littelfuse, Inc., today announced it has entered into definitive agreements to acquire the product portfolio of transient voltage suppression (“TVS”) diodes, switching thyristors and insulated gate bipolar transistors (“IGBT”) for automotive ignition applications from ON Semiconductor Corporation for a combined purchase price of $104 million. This portfolio has annualized sales of approximately $55 million. The […]
Power module targets vehicular brushless-motor apps
ON Semiconductor has further expanded its portfolio of automotive Power Integrated Modules (PIMs) with the introduction of the STK984-190-E. Optimized for driving 3-phase brushless DC motors in modern automotive applications, this module contains six 40 V, 30 A MOSFETs configured as a three-phase bridge with an additional 40 V, 30 A high-side reverse battery protection […]
1.2-kV IGBTs boast super-low switching losses
ON Semiconductor has introduced a new series of insulated gate bipolar transistors (IGBTs) that use its proprietary Ultra Field Stop trench technology. The NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are designed to deliver elevated levels of operational performance in order to meet the exacting demands of modern switching applications (Ets). These 1200 V devices are able to achieve total […]
How and when MOSFETs blow up
by Majeed Ahmad High temperatures and operating conditions outside the safe operating area can sabotage MOSFETs used in switching circuits. The MOSFET (metal-oxide-semiconductor field-effect transistor) is a primary component in power conversion and switching circuits for such applications as motor drives and switch-mode power supplies (SMPSs). MOSFETs boast a high input gate resistance while the […]
Reference design for charging protocol
ON Semiconductor has introduced a reference design implementing the new Qualcomm Quick Charge 3.0 protocol. The high efficiency, small form factor reference design supports the Quick Charge 3.0 High Voltage Dedicated Charging Port (HVDCP) Class A and Class B specifications, Qualcomm’s next generation of fast charging technology for smartphones and tablets, as well as offering […]
Double Data Rate (DDR) termination regulators with built-in power MOSFETs
ON Semiconductor has introduced a series of new high performance devices to support double data rate (DDR) memory, the NCP51200, NCP51400, NCP51510, and NCP51199 feature. All the regulators feature a built in Power MOSFETS and are targeted at a wide variety of applications in the computing, data networking, industrial and handheld consumer markets for specific applications […]
600 V GaN transistors for compact power supplies and adapters
ON Semiconductor and Transphorm, building on their previously announced partnership to bring gallium nitride (GaN) based power solutions to market, announced the co-branded NTP8G202N (TPH3202PS) and NTP8G206N (TPH3206PS) 600 V GaN cascode transistors and a 240 W reference design that utilizes them. With typical on-resistances of 290 and 150 mΩ, the two new products, NTP8G202N (TPH3202PS) and NTP8G206N […]