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pericomsemiconductor

More power IC technologies challenge design decisions

August 29, 2016 By Aimee Kalnoskas

By Roger Allan, contributing writer There’s good news for power supply system designers. Silicon-based power devices are making performance advances in diode, transistor, and field-effect transistor (FET) functions. But wide-bandgap semiconductor IC technologies like gallium nitride (GaN) and silicon carbide (SiC) are poised to grow rapidly, offering designers greater performance in a smaller package, making […]

Filed Under: Featured, MOSFETS Tagged With: diodesincorporated, efficientpowerconversion, epc, gansystems, infineon, ixys, pericomsemiconductor, powerex, texasinstrumentsinc

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