Silicon carbide is a notoriously hard and complex material. Wafer production for fabricating SiC power semiconductors leverages intensive engineering of manufacturing processes, specifications, and equipment to achieve commercial quality and cost-effectiveness. Necessity and invention Wide-bandgap semiconductors are changing the game in power electronics, enabling system-level efficiency to move beyond the practical limits of silicon devices […]
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1200 V SiC power MOSFETs now amiable in half-bridge packages
SemiQ Inc. has expanded its QSiC power modules portfolio with the introduction of a new series of 1200V silicon-carbide (SiC) power MOSFETs in half-bridge packages. Engineered and tested to operate reliably in demanding environments, these new compact, high-performance modules enable high-power-density implementations while minimizing dynamic and static losses. Featuring high breakdown voltage (>1400V), the new […]
SiC diodes rated for 1,700 Vdc and 5 A
A third-generation 1,700-V 5-A SiC Schottky diode called the GP3D005A170B comes in the industry standard TO-247-2 package as well as bare-die format. 10-A and 20-A 1,700-V diodes will follow shortly. Michael T. Robinson, SemiQ President states that, “This 1,700-V silicon carbide Schottky Diode is the latest extension to our Gen 3 product family which was […]
