The QSiC™ Gen3 SiC modules from SemiQ Inc are silicon carbide power modules designed for compact and efficient active front ends and compressor systems used in advanced datacenter cooling infrastructure. The modules deliver a 30% reduction in specific on-resistance (RONsp) and turn-off energy losses (EOFF) compared with previous generations and are available in multiple configurations […]
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SiC MOSFET family adds Schottky-diode versions for lower switching losses
SemiQ Inc. has expanded its 1200 V Gen3 SiC MOSFET line with five SOT-227 power modules offering RDS(on) values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. The new GCMS versions incorporate Schottky barrier diodes, which reduce switching losses at elevated temperatures compared with the non-SBD GCMX variants. The modules are intended for medium-voltage, high-power […]
Co-packaged SiC MOSFETs offer switching speeds as low as 67 ns
SemiQ Inc has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. In addition to smaller die sizes, third-generation SIC devices offer faster switching speeds and reduced losses. The family of highly rugged and easy mount devices currently offers six devices with an RDSon range of 8.4 to 39 […]
1200 V MOSFET design cuts switching losses for EV charging applications
SemiQ Inc. has announced its third-generation QSiC 1200V MOSFET, a silicon carbide device engineered for high-voltage applications. The new design achieves a 20% reduction in die size compared to the company’s second-generation devices while delivering enhanced switching performance and efficiency metrics. The device features key electrical specifications including a 1200V drain-to-source voltage (VDS), total switching […]
What makes SiC tick?
Silicon carbide is a notoriously hard and complex material. Wafer production for fabricating SiC power semiconductors leverages intensive engineering of manufacturing processes, specifications, and equipment to achieve commercial quality and cost-effectiveness. Necessity and invention Wide-bandgap semiconductors are changing the game in power electronics, enabling system-level efficiency to move beyond the practical limits of silicon devices […]
1200 V SiC power MOSFETs now amiable in half-bridge packages
SemiQ Inc. has expanded its QSiC power modules portfolio with the introduction of a new series of 1200V silicon-carbide (SiC) power MOSFETs in half-bridge packages. Engineered and tested to operate reliably in demanding environments, these new compact, high-performance modules enable high-power-density implementations while minimizing dynamic and static losses. Featuring high breakdown voltage (>1400V), the new […]
SiC diodes rated for 1,700 Vdc and 5 A
A third-generation 1,700-V 5-A SiC Schottky diode called the GP3D005A170B comes in the industry standard TO-247-2 package as well as bare-die format. 10-A and 20-A 1,700-V diodes will follow shortly. Michael T. Robinson, SemiQ President states that, “This 1,700-V silicon carbide Schottky Diode is the latest extension to our Gen 3 product family which was […]
