Transphorm Inc. today announced that the U.S. Department of Defense (DoD) Office of Naval Research (ONR) has exercised a three-year $15.9 million option on an existing $2.6 million base contract with the company. This contract, N68335-19-C-0107, administered by Naval Air Warfare Center Aircraft Division, Lakehurst establishes Transphorm as a U.S.-based dedicated production source and supplier […]
900-V GaN FET sports 50 mOhm on resistance
Transphorm Inc. has introduced its second 900 V FET, the Gen III TP90H050WS, enhancing the industry’s only 900 V GaN product line. These devices now enable three-phase industrial systems and higher voltage automotive electronics to leverage GaN’s speed, efficiency and power density. Further, the new FET’s platform is based on Transphorm’s 650 V predecessor, the […]
GaN power devices, Part 2: Application
Part 1 of this FAQ explored the basics of GaN switching transistors at the device and physics level. This part will look at driving and applying GaN devices. Q: What do I need to know to use a GaN device? A: There are three functional blocks associated with power switching: the power-device driver, the power […]
Achtung! Power technology on display at PCIM Nuremberg
PCIM Europe is billed as the world’s leading exhibition and conference for power electronics, intelligent motion, renewable energy, and energy management. Recently wrapping up in Nuremberg, the exhibition portion of PCIM featured over 500 booths. Here are some of the more notable technology displays we saw in touring the event. NEXT PAGE: Smaller inverters for […]
Automotive-qualified GaN power FETs work at higher temps than silicon counterparts
Transphorm Inc. announced that its third generation, JEDEC-qualified high voltage GaN platform has passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors. This achievement marks the company’s second automotive-qualified product line. And, notably, its most reliable given the Gen III GaN platform’s ability to perform at 175°C during qualification testing. Transphorm’s Gen III […]
Transphorm’s ships 250K GaN FETs, shows field failure data
Transphorm Inc. disclosed that it has shipped more than 250 thousand high voltage GaN FETs. Used in customers’ mass production applications, the devices are manufactured by the company in its Aizu, Japan, wafer foundry. Transphorm also stated that its wafer-foundry’s annual installed capacity base of 15 million parts of its popular 50 mohm product equivalent […]
GaN FETs boost efficiency in electric vehicle chargers
The role gallium-nitride FETs play in the design of an EV charging circuit help illustrate how these wide-bandgap semiconductors facilitate energy efficiency. FENG QI, TRANSPHORM THE PHASE-SHIFT FULL BRIDGE (PSFB) is a classic topology for applications that must accommodate a wide range of operating voltages, as with battery chargers. A PSFB converter generally uses four […]
650-V GaN FETs with 4-V threshold
Transphorm today announced availability of its third generation (Gen III) 650-V GaN FETs. Power transistors built on Gen III technology yield lower electromagnetic interference (EMI), increased gate noise immunity, and greater headroom in circuit applications. The latest evolution of the award-winning platform stems from knowledge gained by the Transphorm team working with customers on end […]
High voltage GaN application development resources available online
Transphorm Inc. announced the latest resources for high voltage GaN application development produced by its Silicon Valley Center of Excellence. The Center is responsible for educating and supporting customers developing with high-voltage (HV) wide bandgap semiconductor. Application design engineers can access tools, app notes, SPICE models and more via the Center’s Design Resources library. For questions regarding […]
Servo motor first to use high-voltage (HV) GaN
Transphorm Inc. along with Yaskawa Electric Corporation announced that Yaskawa’s Σ-7 F is the first servo motor to use high-voltage (HV) GaN. Transphorm’s technology enables Yaskawa to deliver better performance in a smaller form factor versus what is possible with incumbent silicon semiconductors. The groundbreaking achievement of this co-developed device is that the Σ-7 F integrates […]
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