Transphorm Inc., the leader in the design and manufacturing of JEDEC-qualified 650V gallium nitride (GaN) semiconductors, formally introduced its Silicon Valley Center of Excellence today. Established over the past year, the Center is Transphorm’s customer support initiative for high-voltage-GaN-based power application development. The Center’s mission is to educate and support customers developing with high voltage […]
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GaN FET boasts 72 mΩ on resistance
Transphorm Inc., a leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, today announced its latest portfolio addition: the TPH3212PS. Available in a TO-220 package, the device has an on-resistance of 72 mOhms (mΩ) and targets AC to DC and DC to AC power supplies. When used inside the former, the […]