UnitedSiC has responded to the power designer’s requests for higher-performance, higher-efficient SiC FETs with the announcement of the industry’s best 750V, 6mohm device. At an RDS(on) value of less than half the nearest SiC MOSFET competitor, the new 6mohm device also provides a robust short-circuit withstand time rating of 5s. Today’s announcement includes 9 new […]
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SiC power FETs boast super-low 6-mΩ RDS(on)
At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are available in the […]
Free online tool streamlines SiC FET, Schottky diode selection process
UnitedSiC has launched an upgrade to its FET-Jet CalculatorTM. This new version (v2) significantly streamlines the SiC FET and Schottky diode selection process and simplifies the analysis of all power-related results. First launched in March, this simple, registration-free online tool facilitates the designer’s selection and performance comparison process, in different power applications and 26 unique […]
The advantages of generation-four SiC FETs
New silicon-carbide FETs perform better than previous versions and can replace silicon MOSFETs with relative ease. Anup Bhalla, VP Engineering UnitedSiC Wide-bandgap (WBG) semiconductors are now accepted as the future of high-efficiency power conversion. The reason: they provide lower conduction and switching losses than otherwise-comparable silicon-based IGBTs or MOSFETs. Since the introduction of WBG silicon […]
750-V SiC FETs feature reduced on-resistance, low intrinsic capacitance
Devices based on an advanced Gen 4 SiC FET technology platform are the first and only 750-V SiC FETs currently available on the market. These Gen 4 devices enable new performance levels, based on leadership Figures of Merit (FoM), that benefit power applications across automotive, industrial charging, telecom rectifiers, datacenter PFC, and dc-dc conversion as […]
FETs in DFN 8×8 format boast low RDS(on) of 34mΩ and 45mΩ
UnitedSiC has introduced the UF3SC065030D8 and UF3SC065040D8; the industry’s lowest RDS(on) SiC FETs available in the popular low-profile DFN 8×8 surface-mount package. The 650V devices replace two standard silicon devices, enabling engineers to build switching circuits with greater efficiency and higher power density than is possible with a discrete design approach. Applications are expected to […]
Low RDS(on) SiC FETs come in low-profile DFN 8×8 SM package
UnitedSiC has introduced the UF3SC065030D8 and UF3SC065040D8; the industry’s lowest RDS(on) SiC FETs available in the popular low-profile DFN 8×8 surface-mount package. The 650V devices replace two standard silicon devices, enabling engineers to build switching circuits with greater efficiency and higher power density than is possible with a discrete design approach. Applications are expected to […]
SiC FETs feature RRS(on) below 10 mΩ for high efficiency, low losses
Four new SiC FETs deliver RDS(ON) levels as low as 7 mΩ, delivering unprecedented levels of performance and efficiency for use in high-power applications such as electric vehicle (EV) inverters, high-powered dc/dc converters, high-current battery chargers and solid-state circuit breakers. Of the four new UF3C SiC FET devices, one is rated at 650 V with […]
Hard-switching 650-V SiC FETs come in TO220-3L packages
UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has added two new TO220-3L package options to its growing range of hard-switching UF3C FAST series of 650V SiC FETs. The new products offer RDS(on) values of 30mohms (UF3C065030T3S) and 80mohms (UF3C065080T3S). The three-leaded, industry-standard TO220-3L package features enhanced thermal characteristics made possible by a sintered-silver packaging […]
SiC 1.2-kV FET comes in TO-247-4L 4-leaded Kelvin Sense discrete package
UnitedSiC has further expanded its UF3C FAST series product offering by introducing an additional 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option. The UF3C120150K4S offers a typical on-resistance (RDS(on)) of 150 mΩ, bringing the total number of 4-leaded FAST Series devices up to six and extending the on-resistance range of […]
