Vishay Intertechnology, Inc. introduced five new series of 60 V, 100 V, and 150 V surface-mount Trench MOS Barrier Schottky (TMBS) rectifiers in the low profile DFN3820A package with wettable flanks. Providing space-saving, high-efficiency solutions for commercial, industrial, energy, and automotive applications, the VxNL63, VxNM63, VxN103, VxNM103, and VxNM153 each offer best-in-class current ratings up […]
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AEC-Q102-qualified linear optocoupler feature isolation voltage of 5300 Vrms
Vishay Intertechnology, Inc. introduced the industry’s first AEC-Q102 qualified linear optocoupler. Offering industry-high isolation voltage of 5300 Vrms, the Vishay Semiconductors VOA300 provides a response time that is five times faster than competing devices, while delivering increased transfer gain stability of ± 0.005 %/°C typical and a single-ended output for design flexibility. The Automotive Grade device […]
Fast body diode MOSFET delivers 0.045 Ω at 10 V
Vishay Intertechnology, Inc. introduced a new fourth-generation 600 V EF Series fast body diode MOSFET in the low-profile PowerPAK 10 x 12 package. Providing high efficiency and power density for telecom, industrial, and computing applications, the Vishay Siliconix n-channel SiHK045N60EF slashes on-resistance by 29 % compared with previous-generation devices while delivering a 60 % lower […]
600 V and 1200 V rectifiers reduce conduction and switching losses
Vishay Intertechnology, Inc. introduced 15 new FRED Pt Gen 5 600 V and 1200 V Hyperfast and Ultrafast rectifiers in the compact SOT-227 package. Offering the best conduction and switching loss trade-off for devices in their class, the Vishay Semiconductors rectifiers are designed to increase the efficiency of high-frequency converters and of soft-switched or resonant […]
UVC emitting diodes offered in ceramic- and quartz-based packages
Vishay Intertechnology, Inc. introduced two new UVC (short wavelength ultraviolet) emitting diodes in a ceramic / quartz-based package for sterilization in medical, industrial, and consumer applications. Compared to previous-generation solutions, the Vishay Semiconductors VLMU35CR40-275-120 and VLMU35CR41-275-120 deliver higher radiant power at a lower cost while offering higher disinfection efficiency and longer service life. The devices […]
Bidirectional TVS devices boast high peak pulse power dissipation
Vishay Intertechnology introduced three new series of 24 V surface-mount XClampR transient voltage suppressors (TVS) that offer high peak pulse power dissipation equivalent to the 7 kW of conventional TVS at 10/1000 μs in the SMC (DO-214AB) package and 10/10 000 μs in the DO-218AB. The bidirectional devices deliver high power density over a wide […]
Automotive-grade silicon PIN photodiode delivers peak sensitivity of 950 nm
The Optoelectronics group of Vishay Intertechnology, Inc. introduced a new Automotive Grade 4-quadrant silicon PIN photodiode in a standard surface-mount package. Enabling a variety of sensor and control applications for the automotive, consumer, and industrial markets, the Vishay Semiconductors K857PH combines high photosensitivity with low 0.1 percent crosstalk and virtually no tolerance between its segments. […]
Surface-mount small signal diodes available in ultra-compact DFN1006-2A package
Vishay Intertechnology, Inc. introduced new surface-mount small signal diodes in the ultra-compact DFN1006-2A plastic package with wettable flanks. Designed to save space and improve thermal performance in automotive and industrial applications, the 40 V BAS40L Schottky and 100 V BAS16L switching diodes are each available in AEC-Q101 qualified versions. Measuring only 1 mm by 0.6 mm by 0.45 […]
ESD protection diode in SOT package offers low capacitance and leakage current
Vishay Intertechnology, Inc. released a new bidirectional asymmetrical (BiAs) single-line ESD protection diode in the compact new DFN1006-2A package with side-wettable terminals. Saving space over solutions in SOT packages, the Vishay Semiconductors VCUT0714BHD1 offers low capacitance and leakage current for the protection of high-speed data lines against transient voltage signals. With its working voltage range […]
30 V, N-channel MOSFET offers RDS(ON) down to 0.95 mΩ
Vishay Intertechnology, Inc. introduced a versatile new 30 V n-channel TrenchFET Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, the Vishay Siliconix SiSS52DN features best in class on-resistance of 0.95 mΩ at 10 […]
