Vishay Intertechnology, Inc. introduced an AEC-Q101 qualified n-channel 60 V MOSFET that is the industry’s first such device in the PowerPAK SO-8L dual asymmetric package. The new Vishay Siliconix SQJ264EP is designed to meet the need for space savings and increased efficiency in DC/DC switch-mode power supplies for automotive applications. The new device combines a […]
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Half-bridge power stage delivers Rds(ON) down to 8.05 mΩ
Vishay Intertechnology introduced a new 40 V n-channel MOSFET half-bridge power stage that delivers increased power density and efficiency for white goods and industrial, medical, and telecom applications. Integrating high side and low side MOSFETs in one compact PowerPAIR 3.3 mm by 3.3 mm package, the Vishay Siliconix SiZ240DT provides best in class on-resistance and […]
n-channel MOSFET saves space, increases power density
Vishay Intertechnology, Inc. introduced a new 200 V n-channel MOSFET that offers industry-low typical on-resistance of 61 mΩ at 10 V in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, in addition to improved on-resistance times gate charge — a critical figure of merit (FOM) for MOSFETs used in switching applications — […]
-30 V, P-channel MOSFET offers on-resistance of 1.7 mΩ
Vishay Intertechnology, Inc. introduced the first-ever -30 V p-channel power MOSFET to offer on-resistance of 1.7 mΩ at 10 V. With its industry-low on-resistance and 6.15 mm by 5.15 mm thermally enhanced PowerPAK SO-8 single package, the Vishay Siliconix TrenchFET Gen IV SiRA99DP is purpose-built to increase power density. The low on-resistance of the MOSFET […]
Rectifiers in low profile SMP package increase power density and efficiency
Vishay Intertechnology, Inc. has expanded its offering of surface-mount TMBS Trench MOS Barrier Schottky rectifiers with 16 new 2 A and 3 A devices in the eSMP series low profile SMP (DO-220AA) package. The Vishay General Semiconductor rectifiers feature a wide range of reverse voltages from 45 V to 200 V, while their 3 A […]
60 V MOSFET offers RS-S(ON) down to 10 mΩ typical in a 3 mm x 3 mm footprint
Vishay Intertechnology, Inc. introduced a new common-drain dual n-channel 60 V MOSFET in the compact, thermally enhanced PowerPAK 1212-8SCD package. Designed to increase power density and efficiency in battery management systems, plug-in and wireless chargers, DC/DC converters, and power supplies, the Vishay Siliconix SiSF20DN offers the industry’s lowest RS-S(ON) in a 60 V common-drain device. […]
What do molded power inductors bring to high efficiency, compact designs?
Modern hardware applications trend towards compact designs that are power efficient. Passive devices don’t get as much attention as a microcontroller’s many sleep and shutdown states. However, every drop of available efficiency adds up and can make a difference. It’s possible to improve power efficiency with the right inductor. Power inductors are a necessary component […]
Rutronik and Vishay Intertechnology extend franchise agreement to the Americas
Rutronik Inc.is now distributing the entire Vishay Intertechnology, Inc. product portfolio in the Americas. Vishay offers a wide range of semiconductors and passive components, with a product lineup that includes resistors, inductors, capacitors, and more. The company predominantly serves the industrial, automotive, computing, and telecommunications markets. Vishay’s portfolio includes: MOSFETs, power resistors, voltage dividers, battery […]
Smart power stage module integrates high-accuracy current, temperature monitors
The SiC645 is a smart VRPower device that integrates a high side and low side MOSFET, a high performance driver with integrated bootstrap FET. The SiC645 offers high-accuracy current and temperature monitors that can be fed back to the controller and doubler to complete a multiphase dc/dc system. They simplify design and increase performance by […]
Power MOSFET features low ON-resistance of 0.58 mΩ at 10
Vishay Intertechnology, Inc. introduced a 25V n-channel TrenchFET Gen IV power MOSFET that features the industry’s lowest maximum on-resistance for such a device: 0.58 mΩ at 10V. Delivering increased efficiency and power density for a wide range of applications, the Vishay Siliconix SiRA20DP offers the lowest gate charge and gate charge times on-resistance figure of […]
