WIN Semiconductors Corp announces the commercial release of its next-generation integrated mmWave GaAs platform, PQG3-0C. Targeting mmWave front ends, the PQG3-0C technology combines individually optimized E-mode low noise and D-mode power pHEMTs to enable best-in-class PA and LNA performance on the same chip. The E-mode/D-mode pHEMTs have ƒt of 110GHz and 90GHz respectively, and both […]
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50V RF GaN platform targets high-performance, front-end applications
WIN Semiconductors Corp announces the commercial release of a 50V 0.25µm-gate RF gallium nitride (GaN) platform, NP25-20, and targets high-performance front-end applications including radio access networks, satellite communications, electronic warfare, and radar systems. The NP25-20 technology supports full MMICs enabling WIN customers to design compact, linear, or saturated high-power amplifiers, rugged low-noise amplifiers, and single-chip […]
Tech platform designed for single chip 5G front ends operating in 24GHz to 45GHz bands
WIN Semiconductors Corp has combined an advanced 100GHz ƒt enhancement-mode pHEMT with monolithic PIN and Schottky diodes to provide best-in-class mmWave performance for all front-end functions. The PIH1-10 platform is designed for single-chip 5G front ends operating in the 24GHz to 45GHz bands. The innovative PIH-10 technology provides a new set of integrated GaAs solutions […]
Optimized 0.25μm GaN on SiC technology provides provides 5 W/mm output power
WIN Semiconductors Corp has released an optimized version of its 0.25µm gallium nitride technology, NP25, that provides superior DC and RF transistor performance. NP25 is a 0.25µm-gate GaN-on-SiC process and offers users the flexibility to produce both fully integrated amplifier products as well as custom discrete transistors. In production since 2014, the optimized 0.25µm process […]
