WIN Semiconductors Corp has combined an advanced 100GHz ƒt enhancement-mode pHEMT with monolithic PIN and Schottky diodes to provide best-in-class mmWave performance for all front-end functions. The PIH1-10 platform is designed for single-chip 5G front ends operating in the 24GHz to 45GHz bands. The innovative PIH-10 technology provides a new set of integrated GaAs solutions […]
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Optimized 0.25μm GaN on SiC technology provides provides 5 W/mm output power
WIN Semiconductors Corp has released an optimized version of its 0.25µm gallium nitride technology, NP25, that provides superior DC and RF transistor performance. NP25 is a 0.25µm-gate GaN-on-SiC process and offers users the flexibility to produce both fully integrated amplifier products as well as custom discrete transistors. In production since 2014, the optimized 0.25µm process […]
