Wolfspeed, A Cree Company, has announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for satellite and space systems. Wolfspeed’s proven GaN-on-SiC fabrication processes have demonstrated industry-leading reliability and performance, delivering more than 100 billion total hours of field operation with a best-in-class FIT rate of less […]
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GaN-on-SiC RF power device shipments surpass 1.3 GW output
Wolfspeed, A Cree Company, announced that as of the end of 2015, it shipped GaN-on-SiC RF power transistors with a combined RF output power of more than 1.3 gigawatts. Wolfspeed achieved this milestone while maintaining a failure-in-time rate (FIT rate) of 5-per-billion device hours, illustrating the industry-leading reliability and performance of Wolfspeed’s GaN-on-SiC devices. “Wolfspeed’s […]
SiC MOSFETs power high-frequency battery chargers
Wolfspeed, A Cree Company, announced today that Gruppo PBM, a leader in industrial battery chargers, is using Wolfspeed SiC MOSFETs in its new HF9 battery charger family to enable higher efficiency and power density at a lower overall system cost. Demand for safe, efficient, and fast-charging industrial batteries has increased exponentially along with the proliferation […]
Surface-mount SiC MOSFET for auxiliary power circuits
Wolfspeed, A Cree Company, continues its innovation in silicon carbide (SiC) power device technology and packaging with the introduction of the industry’s first 1700V SiC MOSFET offered in an optimized surface mount package designed for commercial use in auxiliary power supplies in high voltage power inverter systems. The higher blocking voltage enables design engineers to […]