• Skip to primary navigation
  • Skip to main content
  • Skip to primary sidebar
  • Skip to footer
  • Subscribe
  • Advertise

Power Electronic Tips

Power Electronic News, Editorial, Video and Resources

  • Products
    • Power Supplies
    • AC-DC
    • DC-DC
    • Battery Management
    • Capacitors
    • Magnetics
    • MOSFETS
    • Power Management
    • RF Power
    • Resistors
    • Transformers
    • Transistors
  • Applications
    • 5G
    • AI
    • Automotive
    • EV Engineering
    • LED Lighting
    • Industrial
    • IoT
    • Wireless
  • Learn
    • eBooks / Tech Tips
    • EE Training Days
    • FAQ
    • Learning Center
    • Tech Toolboxes
    • Webinars & Digital Events
  • Resources
    • Design Guide Library
    • Digital Issues
    • Engineering Diversity & Inclusion
    • LEAP Awards
    • Podcasts
    • White Papers
    • Design Fast
  • Video
    • EE Videos & Interviews
    • Teardown Videos
  • EE Forums
    • EDABoard.com
    • Electro-Tech-Online.com
  • Engineeering Training Days
  • Newsetter Subscription

TI’s ultra-small FemtoFET™ MOSFETs Feature Lowest On-Resistance

November 5, 2013 By Jennifer Calhoon

Texas Instruments (TI) (NASDAQ: TXN) introduced the industry’s smallest, low on-resistance MOSFETS for space-constrained handheld applications, such as smartphones and tablets. The new family of FemtoFET™ MOSFET transistors features ultra-small packaging and on-resistance below 100 milli-ohms.

TIs-ultra-small-FemtoFET

The three N-channel and three P-channel FemtoFET MOSFETs are packaged in a land grid array (LGA) that reduces board space by up to 40 percent when compared to chip scale packaging (CSP). The CSD17381F4 and CSD25481F4 feature ultra-low on-resistance below100 milli-ohm, which is 70-percent lower than similar devices in the market today. All the FemtoFET MOSFETS provide electrostatic discharge (ESD) protection greater than 4,000 V human body model (HBM).

The FemtoFET MOSFETS join TI’s portfolio of NexFET power MOSFETS that includes the CSD25213W10 P-channel and CSD13303W1015 N-channel devices for portable applications, including cell phones. TI offers an extensive line of power management products designed to save board space and reduce power consumption in handheld applications, such as the LP5907 high-current, low-dropout (LDO) linear voltage regulator and TPS65090 front-end power management unit (PMU).
FemtoFET MOSFET family key features and benefits
On-resistance under 100 milli-ohm is 70-percent lower than similar devices, providing power savings and longer battery life.

TI's-ultra-small-FemtoFET Chart

FemtoFET MOSFET family key features and benefits

  • On-resistance under 100 milli-ohm is 70-percent lower than similar devices, providing power savings and longer battery life.
  • Measuring 0.6-mm by 1.0-mm by 0.35-mm, the FemtoFET LGA packages are 40-percent smaller than standard CSP.
  • Continuous drain current values ranging from 1.5 A to 3.1 A provide more than double the performance compared to similar size devices on the market today.

Availability and pricing

Available in volume now from TI and its authorized distributors, the FemtoFET MOSFETs range in price from US$0.06 in 1,000-unit quantities for the CSD17483F4, to US$0.10 for the CSD17381F4.

TI analog for consumer electronics

TI’s broad range of power management and analog signal chain products offers design engineers the high performance, low power and integration they need to create innovative and differentiated consumer electronics. TI is engineering the future with gesture recognition, touch feedback, advanced battery charging, audio, health technology and more. Learn how analog products improve how we live, work and play with TI Analog Solutions for Consumer.

Find out more:

  • Search for solutions, get help and share knowledge in the Power Management forum in the TI E2E™ Community.
  • Design a complete power management system online with TI’s WEBENCH Power Designer.
  • Download power reference designs from TI’s PowerLab™ Reference Design Library.

Texas Instruments
www.ti.com

Filed Under: MOSFETS, Resistors

Primary Sidebar

Featured Contributions

Robust design for Variable Frequency Drives and starters

Meeting demand for hidden wearables via Schottky rectifiers

The case for vehicle 48 V power systems

GaN reliability milestones break through the silicon ceiling

Developing power architecture to support autonomous transportation

More Featured Contributions

EE LEARNING CENTER

EE Learning Center

EE TECH TOOLBOX

“ee
Tech Toolbox: 5G Technology
This Tech Toolbox covers the basics of 5G technology plus a story about how engineers designed and built a prototype DSL router mostly from old cellphone parts. Download this first 5G/wired/wireless communications Tech Toolbox to learn more!

EE ENGINEERING TRAINING DAYS

engineering
“power
EXPAND YOUR KNOWLEDGE AND STAY CONNECTED
Get the latest info on technologies, tools and strategies for EE professionals.
“bills

RSS Current EDABoard.com discussions

  • Diode recovery test Irrm timing.
  • Battery Deep Discharge – IC Workarounds?
  • The Analog Gods Hate Me
  • Safe Current and Power Density Limits in PCB Copper(in A/m² and W/m³) simulation
  • Why so few Phase shift full bridge controllers?

RSS Current Electro-Tech-Online.com Discussions

  • Wideband matching an electrically short bowtie antenna; 50 ohm, 434 MHz
  • The Analog Gods Hate Me
  • Simple LED Analog Clock Idea
  • PIC KIT 3 not able to program dsPIC
  • Parts required for a personal project

DesignFast

Component Selection Made Simple.

Try it Today
design fast globle

Footer

EE World Online Network

  • 5G Technology World
  • EE World Online
  • Engineers Garage
  • Analog IC Tips
  • Battery Power Tips
  • Connector Tips
  • DesignFast
  • EDA Board Forums
  • Electro Tech Online Forums
  • EV Engineering
  • Microcontroller Tips
  • Sensor Tips
  • Test and Measurement Tips

Power Electronic Tips

  • Subscribe to our newsletter
  • Advertise with us
  • Contact us
  • About us

Copyright © 2025 · WTWH Media LLC and its licensors. All rights reserved.
The material on this site may not be reproduced, distributed, transmitted, cached or otherwise used, except with the prior written permission of WTWH Media.

Privacy Policy