• Skip to primary navigation
  • Skip to main content
  • Skip to primary sidebar
  • Skip to footer
  • Subscribe
  • Advertise

Power Electronic Tips

Power Electronic News, Editorial, Video and Resources

  • Products
    • Power Supplies
    • AC-DC
    • DC-DC
    • Battery Management
    • Capacitors
    • Magnetics
    • MOSFETS
    • Power Management
    • RF Power
    • Resistors
    • Transformers
    • Transistors
  • Applications
    • 5G
    • AI
    • Automotive
    • EV Engineering
    • LED Lighting
    • Industrial
    • IoT
    • Wireless
  • Learn
    • eBooks / Tech Tips
    • EE Training Days
    • FAQ
    • Learning Center
    • Tech Toolboxes
    • Webinars & Digital Events
  • Resources
    • Design Guide Library
    • Digital Issues
    • Engineering Diversity & Inclusion
    • LEAP Awards
    • Podcasts
    • White Papers
  • Video
    • EE Videos & Interviews
    • Teardown Videos
  • EE Forums
    • EDABoard.com
    • Electro-Tech-Online.com
  • Engineeering Training Days
  • Newsetter Subscription

650V and 1200 V standard gate drive SiC FETs offer drop-in functionality

November 5, 2018 By Aimee Kalnoskas Leave a Comment

UF3C FASTUnitedSiC announced the launch of its UF3C FAST series of 650 V and 1200 V high-performance silicon carbide FETs in a standard TO-247-3L package. The FAST Series offers increased switching speeds and higher efficiency levels than their existing UJC3 Series.

Based on UnitedSiC’sproprietary cascode configuration,  this new series provides higher switching speeds while at the same time offering a ‘drop-in’ replacement solution for most TO-247-3L IGBT, Si-MOSFET and SiC-MOSFET parts. This means system upgrades for greater performance and efficiency can be affected without requiring changes to the existing gate drive circuitry. Turn-on losses can be reduced based on a 50 percent reduction in Qrr. For high current use, a small, low-cost RC snubber is required, which also simplifies EMI design.

Applications suitable for use with the UF3C FAST series include the full range of hard switched circuits such as active rectifiers and totem-pole PFC stages, commonly used in EV charging, telecom rectifiers and server supplies.

Built on UnitedSiC’s Gen-3 SiC transistor technology, the UF3C FAST series integrates a faster SiC JFET with a custom-designed Si-MOSFET to produce the ideal combination of normally-OFF operation, a high-performance body diode and easy gate drive of the MOSFET. Compared with other wide band-gap technologies, the SiC cascode devices support standard 12 V gate drive, and have assured avalanche ratings (100 percent production-tested).

“UnitedSiC’s new FAST SiC FET range is simple to use and offer a great cost-performance option,” said Anup Bhalla, VP Engineering at UnitedSiC. “The range offers design engineers the opportunity to extract even higher levels of efficiency from high-power designs.”

The range includes the following part numbers: UF3C120040K3S (1200 V / 35 mΩ), UF3C065030K3S (650 V / 30 mΩ) and UF3C065040K3S (650 V / 42 mΩ).

Datasheets and a SiC FET user guide are available at https://unitedsic.com/cascodes/, which include recommended RC snubber values tested by UnitedSiC for optimal performance.

Prices range from $14.50 for the UF3C065040K3S to $24.50 for the UF3C120040K3S at 1,000-piece quantities. Stock is available at Mouser and other local distributors.

You may also like:


  • The benefits of silicon carbide in dc/dc converters

Filed Under: Transistors Tagged With: unitedsic

Reader Interactions

Leave a Reply

You must be logged in to post a comment.

This site uses Akismet to reduce spam. Learn how your comment data is processed.

Primary Sidebar

Featured Contributions

Vertical power delivery reduces losses in AI processor designs

Protecting Ethernet interfaces in telecommunications applications against common high energy surges

Ionic cooling: a silent revolution in thermal management

Robust design for Variable Frequency Drives and starters

Meeting demand for hidden wearables via Schottky rectifiers

More Featured Contributions

EE LEARNING CENTER

EE Learning Center

EE TECH TOOLBOX

“ee
Tech Toolbox: Aerospace & Defense
This Tech Toolbox dives into the technical realities of modern defense, exploring how MBSE is streamlining aerospace design and what’s next for radar and electronic warfare.

EE ENGINEERING TRAINING DAYS

engineering
“power
EXPAND YOUR KNOWLEDGE AND STAY CONNECTED
Get the latest info on technologies, tools and strategies for EE professionals.
“bills

RSS Current EDABoard.com discussions

RSS Current Electro-Tech-Online.com Discussions

  • Bot checks
  • timing delay code statements using Swordfish
  • S1MJ ?
  • Getting into an LED bulb
  • Understanding reversing polarity at astable multivibrator

Footer

EE World Online Network

  • 5G Technology World
  • EE World Online
  • Engineers Garage
  • Analog IC Tips
  • Battery Power Tips
  • Connector Tips
  • EDA Board Forums
  • Electro Tech Online Forums
  • EV Engineering
  • Microcontroller Tips
  • Sensor Tips
  • Test and Measurement Tips

Power Electronic Tips

  • Subscribe to our newsletter
  • Advertise with us
  • Contact us
  • About us

Copyright © 2026 · WTWH Media LLC and its licensors. All rights reserved.
The material on this site may not be reproduced, distributed, transmitted, cached or otherwise used, except with the prior written permission of WTWH Media.

Privacy Policy