ON Semiconductor and Transphorm, building on their previously announced partnership to bring gallium nitride (GaN) based power solutions to market, announced the co-branded NTP8G202N (TPH3202PS) and NTP8G206N (TPH3206PS) 600 V GaN cascode transistors and a 240 W reference design that utilizes them.
With typical on-resistances of 290 and 150 mΩ, the two new products, NTP8G202N (TPH3202PS) and NTP8G206N (TPH3206PS) are offered in an optimized TO-220 package for easy integration with customers’ existing circuit board manufacturing capabilities. Both of the 600 V products have been qualified using JEDEC standards and are in mass production.
The NCP1397GANGEVB (TDPS250E2D2) evaluation board is offered as a complete reference design for customers to implement and evaluate GaN cascode transistors in their power designs. The evaluation board offers customers a smaller footprint and better efficiency than power supplies using traditional devices. The boost stage delivers 98 percent efficiency and utilizes the NCP1654 power factor correction controller. The LLC DC-DC stage uses NCP1397 resonant mode controller to offer 97 percent full load efficiency. This performance is achieved while running at 200+ kHz and – impressively – is also able to meet EN55022 Class B EMC performance.
ON Semiconductor
www.onsemi.com
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