Allegro MicroSystems has announced the release of the brand-new custom SOIC16W package, named “MC”, which marks a leap forward in the industry’s current sensing capabilities for power dense applications that require high isolation with low power loss. This new package has an ultra-low 265uOhm series resistance—more than 2.5 times lower than existing SOIC16W solutions—while delivering […]
Monolithic dual, N-channel JFETs optimized for low noise
Linear Systems announces the re-release of their most popular part, the LSK389 Series, Ultra-Low Noise, Monolithic Dual, N-Channel JFET, now 100% tested to meet or exceed noise specifications. The LSK389 is the lowest noise Junction Field Effect Transistor (JFET) in its class and has been used in ultra-high-end applications for over a decade. The LSK389 […]
FETs in DFN 8×8 format boast low RDS(on) of 34mΩ and 45mΩ
UnitedSiC has introduced the UF3SC065030D8 and UF3SC065040D8; the industry’s lowest RDS(on) SiC FETs available in the popular low-profile DFN 8×8 surface-mount package. The 650V devices replace two standard silicon devices, enabling engineers to build switching circuits with greater efficiency and higher power density than is possible with a discrete design approach. Applications are expected to […]
Low RDS(on) SiC FETs come in low-profile DFN 8×8 SM package
UnitedSiC has introduced the UF3SC065030D8 and UF3SC065040D8; the industry’s lowest RDS(on) SiC FETs available in the popular low-profile DFN 8×8 surface-mount package. The 650V devices replace two standard silicon devices, enabling engineers to build switching circuits with greater efficiency and higher power density than is possible with a discrete design approach. Applications are expected to […]
AC adapter reference design handles 300 W with GaN HEMTs
GaN Systems and ON Semiconductor announced the availability of the world’s highest power density 300 watt AC Adapter Reference Design using GaN Systems’ 650 V, 15 A GaN E-HEMTs and multiple ON Semiconductor controller and driver ICs: NCP51820, NCP13992, NCP1616, and NCP4306. This complete system reference design is highly versatile and low cost, allowing designers to easily develop and bring to […]
IGBT 1,200V/900-A-rated modules handle industrial drives, heavy-duty vehicles, power inverter apps
Infineon Technologies AG has introduced the TRENCHSTOP IGBT7 1200 V module which provides a leading nominal current of 900 A enabling a 30 percent higher inverter output current for the same frame size compared with the former technology. While specific improvements of the module’s chip and housing directly aim at industrial drive applications, it can […]
SiC isolated gate driver ICs boost energy efficiency in SMPSs
With the MAX22701E isolated gate driver from Maxim Integrated Products, Inc., designers of high-voltage/high-power systems can improve power supply efficiency by up to 4 percentage points over competitive solutions, reducing power loss and the resulting carbon footprint by 30 percent. The driver IC is intended for use in switch-mode power supplies within industrial communication systems for solar […]
Researchers find ways to integrate GaN power circuits onto ICs
This year’s IEEE International Electron Devices Meeting (December 7-11, 2019) played host to presentations describing advances in gallium-nitride technology that may lead to smaller, more integrated power circuitry such as single-chip switching power supplies and more efficient power transistors. The IEDM is considered one of the premier technical conferences for developments in semiconductor and integrated […]
SiC FETs feature RRS(on) below 10 mΩ for high efficiency, low losses
Four new SiC FETs deliver RDS(ON) levels as low as 7 mΩ, delivering unprecedented levels of performance and efficiency for use in high-power applications such as electric vehicle (EV) inverters, high-powered dc/dc converters, high-current battery chargers and solid-state circuit breakers. Of the four new UF3C SiC FET devices, one is rated at 650 V with […]
First SiC FETs with RDS(on) <10 mΩ deliver efficiency, low losses
Four new SiC FETs, with RDS(on) levels as low as 7 mΩ deliver unprecedented levels of performance and efficiency for use in high-power applications such as electric vehicle (EV) inverters, high-powered dc/dc converters, high-current battery chargers and solid-state circuit breakers. Of the four new UF3C SiC FET devices, one is rated at 650 V with […]
- 1
- 2
- 3
- …
- 22
- Next Page »
@PowerElectrTips
EE World Online
YouTube
Instagram