Infineon Technologies AG has introduced its first gallium nitride transistor family qualified to the Automotive Electronics Council standard for automotive applications. The company is launching the CoolGaN Automotive Transistor 100 V G1 family for production and has begun supplying samples of pre-production products qualified for automotive applications in accordance with AEC-Q101. The pre-production range includes […]
Transistors
150 V N-channel MOSFET targets power switching applications
MCC Semiconductor has released the MCG062N15Y, a 150V N-channel MOSFET designed for power switching applications requiring compact form factors. The device incorporates Split Gate Trench (SGT) technology with high-density cell architecture to achieve low on-resistance and reduced gate charge characteristics. The MCG062N15Y utilizes a PDFN3333 package configuration that measures 3.3mm x 3.3mm, providing thermal management […]
GaN-based 90 W charger combines primary and secondary control in compact form
Navitas Semiconductor has announced that Xiaomi’s latest 90 W GaN charger uses Navitas’ GaNSense Control IC technology. The charger measures 34 × 45 × 34 mm and weighs 65 grams. It incorporates Navitas’ NV9580 GaNSense Control power IC on the primary side and the NV9701 synchronous rectification controller IC on the secondary side. The GaNSense […]
650 V GaN devices challenge SiC in high-power applications
Renesas Electronics announced its Gen 4+ Super GaN platform, featuring 650 V, 30 milliohm gallium nitride devices for high-power applications. The launch represents the company’s continued investment in GaN technology, following its acquisition of Transphorm and integration with its controller and driver IC product lines. The Gen 4+ platform delivers a 14% reduction in both […]
GaN HEMT transistors target space applications with hermetically sealed packaging
Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan technology. Designed to operate in harsh space environments, the company’s new product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the […]
GaN power module reduces thermal resistance through .XT technology
Infineon Technologies AG is introducing the EasyPACK CoolGaN Transistor 650 V module, adding to its growing GaN power portfolio. Based on the Easy Power Module platform, the module has been specifically developed for high-power applications such as data centers, renewable energy systems, and DC electric vehicle charging stations. It is designed to meet the growing […]
GaN transistors add Schottky diodes to boost converter efficiency
Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency. Additionally, the integrated solution simplifies the […]
100V 1.5 mΩ GaN transistor features built-in Schottky diode in 3 x 5 mm package
Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency. Additionally, the integrated solution simplifies the […]
Power components enhance efficiency in renewable energy systems
Magnachip Semiconductor Corporation announced the launch of two new 6th-generation (Gen6) 650V Insulated Gate Bipolar Transistors (IGBTs), specifically designed for solar inverters. The newly introduced Gen6 IGBTs, incorporating polyimide insulation layers, demonstrate outstanding performance by passing high-voltage, high-humidity and high-temperature reverse bias (HV-H3TRB) tests. These products offer dependable reliability in industrial equipment operating under extreme […]
GaN HEMT features second-gen elements in TOLL package design
ROHM Semiconductor has announced the GNP2070TD-Z 650V GaN HEMT in the TO-Leadless (TOLL) package. The TOLL package offers a compact design with thermal dissipation capabilities suitable for high current applications and switching performance needs. The package manufacturing has been outsourced to ATX Semiconductor (Weihai) Co., Ltd., a specialized OSAT (Outsourced Semiconductor Assembly and Test) provider […]
