Efficient Power Conversion (EPC) released its Phase 18 Reliability Report, which describes updated approaches for evaluating eGaN device reliability across application mission profiles. The report aims to close the gap between lab-generated reliability testing and in-field performance by incorporating application-specific operating conditions and stress histories. It highlights the importance of understanding fundamental GaN HEMT wear-out […]
Transistors
5th-generation SiC MOSFET technology targets a 1200 V device platform
Navitas has introduced a new 5th-generation silicon carbide MOSFET technology platform for 1200 V power conversion designs. The trench-assisted planar structure is designed to improve switching and conduction performance compared to the prior 1200 V generation. Applications include AI data centers, grid and energy infrastructure, and industrial electrification. Reported performance changes include a 35% improvement […]
Renesas expands GaN portfolio to cover 1 V to 650 V+ range with EPC technology license
Efficient Power Conversion (EPC) has entered a licensing agreement with Renesas Electronics for EPC’s low-voltage enhancement-mode gallium nitride (eGaN) technology. Renesas will establish internal wafer fabrication for these devices and second-source select EPC GaN products currently in mass production. The agreement addresses supply-chain concerns by creating an additional qualified manufacturer for existing EPC devices. Over […]
1200 V/300 A IGBT module supports efficient industrial power conversion
CISSOID’s new CMT-PLA1BL12300MA half-bridge IGBT power module integrates Trench Gate Field Stop (TG-FS) IGBT technology in a CPAK-EDC package to support 1200 V blocking and 300 A nominal current with continuous DC capability up to 450 A at 90 °C, low saturation voltage (approximately 1.56 V at 300 A, 25 °C), and reduced switching losses […]
650 V and 1200 V IGBTs improve reliability in high-power inverter designs
The new 650 V and 1200 V discrete IGBT series from Magnachip Semiconductor Corporation is designed for use in solar inverters and industrial energy storage systems, targeting higher current capacity and improved robustness under high-voltage operating conditions. Built on advanced field stop trench technology, the devices reduce cell pitch by about 40 percent to increase […]
GaN automotive transistors achieve AEC-Q101 qualification
Infineon Technologies AG has introduced its first gallium nitride transistor family qualified to the Automotive Electronics Council standard for automotive applications. The company is launching the CoolGaN Automotive Transistor 100 V G1 family for production and has begun supplying samples of pre-production products qualified for automotive applications in accordance with AEC-Q101. The pre-production range includes […]
150 V N-channel MOSFET targets power switching applications
MCC Semiconductor has released the MCG062N15Y, a 150V N-channel MOSFET designed for power switching applications requiring compact form factors. The device incorporates Split Gate Trench (SGT) technology with high-density cell architecture to achieve low on-resistance and reduced gate charge characteristics. The MCG062N15Y utilizes a PDFN3333 package configuration that measures 3.3mm x 3.3mm, providing thermal management […]
GaN-based 90 W charger combines primary and secondary control in compact form
Navitas Semiconductor has announced that Xiaomi’s latest 90 W GaN charger uses Navitas’ GaNSense Control IC technology. The charger measures 34 × 45 × 34 mm and weighs 65 grams. It incorporates Navitas’ NV9580 GaNSense Control power IC on the primary side and the NV9701 synchronous rectification controller IC on the secondary side. The GaNSense […]
650 V GaN devices challenge SiC in high-power applications
Renesas Electronics announced its Gen 4+ Super GaN platform, featuring 650 V, 30 milliohm gallium nitride devices for high-power applications. The launch represents the company’s continued investment in GaN technology, following its acquisition of Transphorm and integration with its controller and driver IC product lines. The Gen 4+ platform delivers a 14% reduction in both […]
GaN HEMT transistors target space applications with hermetically sealed packaging
Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan technology. Designed to operate in harsh space environments, the company’s new product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the […]
