UnitedSiC has further expanded its UF3C FAST series product offering by introducing an additional 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option. The UF3C120150K4S offers a typical on-resistance (RDS(on)) of 150 mΩ, bringing the total number of 4-leaded FAST Series devices up to six and extending the on-resistance range of […]
eGaN power devices now available in wafer form
EPC announces the availability of their enhancement-mode gallium nitride (GaN) devices in wafer form for ease of integration. EPC’s eGaN FETs and ICs are traditionally sold as singular chip-scale devices with solder bars or solder bumps. Chip-scale packaging is a more efficient form of packaging that reduces the resistance, inductance, size, thermal impedance, and cost […]
Power Electronics Top Talks in May 2019 on EDABoard.com
Peer-to-peer, engineer-to-engineer questions and answers from the EDABoard.com engineering community around power electronics. Click the “Read more” link and follow the entire conversation and maybe add your two cents by logging in to EDAboard.com Problem with inverter’s drive – I tried to build this configuration but when I try to raise the voltage up to […]
Why it’s tough to characterize SiC power MOSFETs
Switching transients and parasitics can combine to thwart the accurate measurement of important MOSFET operating parameters. Levi Gant, Xuning Zhang, Ph.D., Littelfuse, Inc. Silicon carbide (SiC) power MOSFETs get a lot of attention because they can switch fast while maintaining high blocking voltages. But their superior switching qualities also have potential drawbacks. Parasitic inductances caused […]
GaN power devices, Part 2: Application
Part 1 of this FAQ explored the basics of GaN switching transistors at the device and physics level. This part will look at driving and applying GaN devices. Q: What do I need to know to use a GaN device? A: There are three functional blocks associated with power switching: the power-device driver, the power […]
GaN power devices, Part 1: Principles
Power devices based on gallium nitride (GaN) are rapidly becoming a viable, higher-performance alternative to silicon MOSFETs due to their higher efficiency and other favorable attributes. In recent years, discrete power-switching and power-handling devices based on gallium nitride (GaN) material have become practical and available, and these devices are now found in many power supplies […]
EV 200-kW inverter helps check out SiC soft-switch topology
Pre-Switch, Inc. announced its CleanWave 200kW silicon carbide (SiC) automotive inverter evaluation system that enables power design engineers to investigate the accuracy of the company’s soft switching architecture and platform over varying load, temperature, device tolerance and degradation conditions. Pre-Switch’s platform, including the Pre-Drive 3 controller board, powered by the Pre-Flex FPGA, and RPG gate […]
Automotive-grade IGBTs feature 1.2-kV ratings
ROHM recently announced the addition of four new automotive-grade 1200V-rated IGBTs which are ideal for inverters used in electronics compressors and for switching circuits used in positive temperature coefficient (PTC) heaters. The new RGS series represents ROHM’s large lineup of AEC-Q101-compliant IGBTs in both 1200V-rated and 650V-rated variants. This series delivers class-leading low conduction loss that contributes to […]
Switcher ICs with integrated 900 V MOSFETs prevents damage in overvoltage situations
Power Integrations announced the release of a suite of offline switcher ICs incorporating 900 V primary MOSFETs. The newly released devices include ICs for high-efficiency isolated flyback power supplies and for simple non-isolated buck converters. Applications include three-phase industrial power supplies up to 480 VAC, and high-quality consumer products destined for regions with unstable mains grids, […]
New SiC FETs added to 650 V product portfolio
UnitedSiC has added seven new TO220-3L and D2PAK-3L device/package combinations to its UJ3C (general purpose) and UF3C (hard switched) series of 650V SiC FETs. These new devices provide new levels of high-voltage power performance in the fast-growing data center server, 5G base station, and electric vehicle markets, where they will be used in power supplies, […]
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