The SiC645 is a smart VRPower device that integrates a high side and low side MOSFET, a high performance driver with integrated bootstrap FET. The SiC645 offers high-accuracy current and temperature monitors that can be fed back to the controller and doubler to complete a multiphase dc/dc system. They simplify design and increase performance by […]
JEDEC Wide Bandgap Power Semiconductor Committee publishes GaN power FETs document
JEDEC Solid State Technology Association announces the publication of JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power Conversion Devices. The first publication developed by JEDEC’s newest main committee, JC-70 Wide Bandgap Power Electronic Conversion Semiconductors, JEP173 is available for free download from the JEDEC website. JEP173 addresses a key need of the user community […]
What’s the difference between a MOSFET and a JFET?
It’s a pretty common question for beginners and can be a fun walk down memory lane for experienced practitioners. Let’s take a dive into two fundamental devices of integrated circuits and learn when to use one over the other. How they are alike Let’s start with what they have in common: they are both types […]
AEC-qualified eGaN FETs boost performance in Lidar, 48-V automotive power systems
EPC announces successful AEC Q101 qualification of two additional eGaN devices, addressing a range of applications in the automotive industry and other harsh environments. The new products, EPC2206, and EPC2212 are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS and 100 VDS ratings respectively. eGaN technology has been in mass production for over eight years, accumulating billions of […]
Reverse-conducting IGBT targets induction heating apps
Infineon Technologies AG is introducing the TRENCHSTOP Feature IGBT Protected Series for Induction Heating. Compared to a standard RC-H5 reverse conduction IGBT the new family integrates logic functionality and a dedicated driver IC for various programmable protection features in a single device. The Protected F Series guarantees higher system reliability with less design and programming […]
Transphorm’s ships 250K GaN FETs, shows field failure data
Transphorm Inc. disclosed that it has shipped more than 250 thousand high voltage GaN FETs. Used in customers’ mass production applications, the devices are manufactured by the company in its Aizu, Japan, wafer foundry. Transphorm also stated that its wafer-foundry’s annual installed capacity base of 15 million parts of its popular 50 mohm product equivalent […]
IEDM highlight: Superjunction SiC device shows lowest on-resistance, high blocking voltage
The annual IEDM conference (www.ieee-iedm.org), sponsored by the IEEE Electron Devices Society, usually includes presentations covering noteworthy technological developments, and this year’s event is no exception. To be held December 1-5, 2018 at the Hilton San Francisco Union Square Hotel, it includes a talk by researchers from the National Institute of Advanced Industrial Science and […]
PMICs span multiple topologies for broad range of applications
AnDAPT announced the release of a portfolio of five Adaptable Power Management Integrated Circuits (Adaptable PMICs) built on its AmP platform ICs. With this unique technology, AnDAPT is able to rapidly release a multitude of Off-the-Shelf PMICs with entirely different topologies, covering a broad spectrum of customer applications, while relying on a single pre-tested and characterized […]
SiC FETs come in TO-247-4L 4-pin Kelvin Sense packages
UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs in a TO-247-4L 4-pin Kelvin Sense package option. Based on an efficient cascode configuration, this new series provides designers with very fast switching, high-power […]
Galvanic isolated octal high-side smart power switch includes SPI port for daisy chaining
The STMicroelectronics ISO8200AQ galvanic isolated octal high-side smart power switch enhances diagnostics and system management by providing a 20 MHz SPI port allowing both per-channel over-temperature signalization and efficient daisy-chaining of multiple devices. A power-good output indicates the status of the process-side power supply. The device enlarges ST’s family of galvanic isolated high-side switches, featuring maximum safety […]
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