Innoscience Technology will present two papers at the prestigious IEEE International Symposium on Power Semiconductor Devices (ISPSD) conference in Vancouver, Canada, May 22-25. The first paper systematically evaluates the reliability and switching lifetime of a 650-V commercial GaN-on-Si HEMT fabricated on a 200mm (8-inch) CMOS-compatible process platform for a high-density PFC Boost power converter application. Innoscience’s […]
Transistors
Chip capacitors feature 500-V ratings, handle snubber, output cap tasks
TDK Corporation has expanded its tried-and-tested range of CeraLink capacitors. Previously, only large, ready-to-fit sizes were available. Now, smaller versions with the classic chip design are included in the portfolio in order to increase the areas of application. The new portfolio starts with the EIA 2220 size, measuring 5.7 x 5 x 1.4 mm, is […]
GaN-on-SiC HEMT transistors offer broadband high linearity
Ampleon announced the release of two new broadband GaN-on-SiC HEMT transistors in the power classes of 30 Watts CLF3H0060(S)-30, 100 Watts CLF3H0035(S)-100. These high linearity devices are the initial products from our Generation 3 GaN-SiC HEMT process recently qualified and released to production. The devices offer broadband high linearity features under low bias settings to […]
GaN in orbit and beyond
Outer space is harsh, but it’s relatively kind to gallium-nitride (GaN) power transistors compared with their Si (Si) counterparts. Si devices require special processing for protection against the total ionizing dose (TID) impact of exposure to radiation in space. GaN has material properties and construction advantages that make it less subject to damage caused by […]
How reliable are GaN HEMTs?
GaN HEMTs are very reliable, but the precise answer is still being refined. Reliability relates to anticipated useful life and is typically measured in mean-time-to-failure. Reliability can be anticipated and determined in advance by testing and measurement. Proving and improving device reliability is an ongoing process. It begins with a device under test (DUT) being […]
SiC power FETs boast super-low 6-mΩ RDS(on)
At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are available in the […]
Advanced power electronics packaging
The trends in advanced power electronics packaging mirror the overall packaging trends in the electronics industry. Those trends include adopting chip-scale packaging (CSP), 3D packaging, 3D printing (also called additive manufacturing), and advanced thermal management materials. These trends are being heavily influenced by the adoption of gallium-nitride (GaN) and silicon-carbide (SiC) wide bandgap power semiconductors […]
LDMOS power transistors optimized for RF power amplifiers
STMicroelectronics is adding a broad range of new devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimized for RF power amplifiers (PAs) in a variety of commercial and industrial applications. Featuring high efficiency and low thermal resistance and packaged to handle high RF power, STPOWER LDMOS devices combine a […]
GaN is cost-effective in motor drive applications
By Eric Persson, Senior Principal Engineer AC-DC Applications, Infineon Technologies We take motors for granted – they have been with us since Benjamin Franklin experimented with electrostatic types nearly three hundred years ago – but the days are long gone when they were controlled in a simple on/off way. Motors in today’s applications, from clothes […]
GaN transistors, ICs feature radiation hardening
EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster-switching speed, higher thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher […]
