At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are available in the […]
Transistors
Advanced power electronics packaging
The trends in advanced power electronics packaging mirror the overall packaging trends in the electronics industry. Those trends include adopting chip-scale packaging (CSP), 3D packaging, 3D printing (also called additive manufacturing), and advanced thermal management materials. In power electronics, these trends are being heavily influenced by the adoption of gallium-nitride (GaN) and silicon-carbide (SiC) wide […]
LDMOS power transistors optimized for RF power amplifiers
STMicroelectronics is adding a broad range of new devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimized for RF power amplifiers (PAs) in a variety of commercial and industrial applications. Featuring high efficiency and low thermal resistance and packaged to handle high RF power, STPOWER LDMOS devices combine a […]
GaN is cost-effective in motor drive applications
By Eric Persson, Senior Principal Engineer AC-DC Applications, Infineon Technologies We take motors for granted – they have been with us since Benjamin Franklin experimented with electrostatic types nearly three hundred years ago – but the days are long gone when they were controlled in a simple on/off way. Motors in today’s applications, from clothes […]
GaN transistors, ICs feature radiation hardening
EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster-switching speed, higher thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher […]
Increasing power conversion efficiency with new semiconductor technologies
by Anup Bhalla, VP Engineering, UnitedSiC Wide bandgap semiconductors are enablers for highly efficient power conversion. There is a choice of devices to use, including SiC FETs, a hybrid of silicon and SiC technology. This article discusses characteristics of the devices in comparison with other approaches. High efficiency is the universal aim in the world […]
Automotive-grade 650-V GaN transistors handle 60 A
GaN Systems announced the expansion of its family of automotive-grade 650V transistors. The GS-065-060-5-B-A is a 60A, bottom-side cooled transistor developed for demanding high-power electric vehicle applications such as onboard chargers, traction inverters, and DC-DC converters. The high-frequency properties of GaN combined with GaN Systems’ proprietary Island Technology layout, and GaNPX packaging provides the high power, low […]
The advantages of Generation-Four SiC FETs
New silicon-carbide FETs perform better than previous versions and can replace silicon MOSFETs with relative ease. Anup Bhalla, VP Engineering UnitedSiC Wide-bandgap (WBG) semiconductors are now accepted as the future of high-efficiency power conversion. The reason: they provide lower conduction and switching losses than otherwise-comparable silicon-based IGBTs or MOSFETs. Since the introduction of WBG silicon […]
80 V RETs feature overhead to handle spikes and pulses
Nexperia announced the industry’s first 80 V RET (Resistor-Equipped Transistor) family. These new RETs or ‘digital transistors’ provide enough headroom for use in 48 V automotive board net (e.g. mild hybrid and EV cars) and other higher voltage circuits which are often subject to large spikes and pulses that previous 50 V parts cannot handle. […]
Half-bridge PCBs help evaluate GaN drivers, transistors
GaN Systems announced the release of two 650V half-bridge daughter cards (30A and 60A), which provide an ultra-versatile platform to evaluate GaN drivers and transistors. The evaluation cards are available in two power levels, up to 3kW (GS-EVB-HB-66508B-RN) and up to 6kW (GS-EVB-HB-66516T-RN), and include the Renesas RAA226110 low-side GaN FET driver. These cards are the industry’s […]
