SSDI developed the SFL22P06S.5 to respond to a customer’s request for a 2N7624U3 replacement needed for a space application. This -22 A, -60 V P-channel MOSFET in the SMD.5 package has a low on-resistance of 60 mΩ max (-10 V, -10 A) and a low total gate charge of 7 NC type. This fast switching device […]
MOSFETS
650 V SiC MOSFET is first in TO-LeadLess package
onsemi announced the world’s first TO-Leadless (TOLL) packaged silicon carbide (SiC) MOSFET at PCIM Europe. The transistor addresses the rapidly growing need for high-performance switching devices that are suitable for designs with high levels of power density. Until recently, SiC devices had been supplied in D2PAK 7-lead packages which required significantly more space. With a footprint of […]
2-kV SiC MOSFETs feature low losses, hard switching capability
The increasing demand for high-power density is pushing developers to adopt 1500 V DC links in their applications to increase the rated power-per-inverter and reduce system costs. However, 1500 V DC-based systems also pose more challenges to the system design, such as fast switching at high DC voltage, which typically requires a multi-level topology. This leads […]
MOSFETS feature low on resistance for high power density
STMicroelectronics’ STPOWER MDmesh M9 and DM9 N-channel super-junction multi-drain silicon power MOSFETs are ideal for switched-mode power supplies (SMPS) in applications from data-center servers and 5G infrastructure to flat-panel televisions. The first devices to be launched are the 650V STP65N045M9 and the 600V STP60N043DM9. Both have very low on-resistance (RDS(on)) per unit area, which maximizes power density and permits compact system dimensions. Each has the […]
Super junction 600-V MOSFETs boast fast reverse recovery time
ROHM Semiconductor announced that they have added seven new devices, the R60xxVNx series, to the PrestoMOS lineup of 600V Super Junction MOSFETs which stand out for their class-leading low ON resistance and the industry’s fastest reverse recovery time (trr). The R60xxVNx series is optimized for power circuits in industrial equipment requiring high power, such as servers, […]
40-V MOSFET targets BDC motor apps in vehicles
Magnachip Semiconductor Corporation announced that the company has released a new 40V Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) to control Brushless Direct Current (BLDC) motors for automotive applications. Given concerns about global climate change and corresponding efforts to reduce carbon emissions, the Electric Vehicle (EV) market is projected to grow significantly. Omdia, a global market research firm, […]
SiC 1.2-kV MOSFET features low on resistance
Solitron Devices is anouncing the introduction of the SD11720, 1200V Silicon Carbide (SiC), low RDS(on) MOSFET. Complimenting a strong offering of high voltage MOSFETs for high reliability/military applications Solitron is expanding its silicon carbide product offering for demanding commercial and industrial applications. Packaged in a TO-247 the SD11720 is ideally suited for EV, Renewable Energy, Motor […]
SiC 1.2-kV MOSFETs feature high overload capability
Infineon Technologies AG introduces a new CoolSiC technology: the CoolSiC MOSFET 1200 V M1H. The advanced silicon carbide (SiC) chip will be implemented in a widely extended portfolio using the popular Easy module family, along with discrete packages using.XT interconnect technology. The M1H chip offers high flexibility and is suitable for solar energy systems, such […]
Power 150-V MOSFET sports low ON resistance
Toshiba Electronic Devices & Storage Corporation has launched a 150V N-channel power MOSFET “TPH9R00CQH” that uses the latest-generation (*1) process, “U-MOSX-H,” and that is suitable for use in switching power supplies for industrial equipment — including those deployed in data centers and communications base stations. TPH9R00CQH has drain-source on-resistance about 42% lower than TPH1500CNH, a […]
650-V SiC MOSFETs sport low reverse-recovery, drain-source charge
Infineon Technologies AG offers a new family of CoolSiC 650 V silicon carbide (SiC) MOSFETs to deliver reliable, easy-to-use, and cost-effective top performance. The devices build on Infineon’s state-of-the-art SiC trench technology and come in a compact D 2PAK SMD 7-pin package.XT interconnection technology. They target high-power applications including servers, telecom, industrial SMPS, fast EV charging, motor drives, solar energy […]
