SemiQ Inc. has announced its third-generation QSiC 1200V MOSFET, a silicon carbide device engineered for high-voltage applications. The new design achieves a 20% reduction in die size compared to the company’s second-generation devices while delivering enhanced switching performance and efficiency metrics. The device features key electrical specifications including a 1200V drain-to-source voltage (VDS), total switching […]
MOSFETS
Compact MOSFET packaging reduces footprint and supports optical inspection
Renesas Electronics Corporation introduced new 100V high-power N-Channel MOSFETs that deliver industry-leading high-current switching performance for applications such as motor control, battery management systems, power management, and charging. End products include electric vehicles, e-bikes, charging stations, power tools, data centers, uninterruptable power supplies (UPS,) and more. Renesas has developed a new MOSFET wafer manufacturing process […]
TVS diodes protect automotive SiC circuits
Littelfuse, Inc. announced the launch of its TPSMB Asymmetrical TVS Diode Series, the first-to-market asymmetrical transient voltage suppression (TVS) diode specifically designed for the protection of Silicon Carbide (SiC) MOSFET gate drivers in automotive applications. This innovative product addresses the increasing demand for reliable overvoltage protection in next-generation electric vehicle (EV) systems, delivering a compact, single-component solution that […]
20A hot-swap controller with 2.8 mΩ integrated MOSFET
HMI announces the release of the HL8520E, a state-of-the-art hot-swap/E-Fuse device designed to offer superior protection and power control for sensitive load circuitry. The HL8520E is designed to protect systems from input transients, shorts, and voltage spikes that could damage load circuitry, while managing power delivery to enhance reliability. With an input voltage range of […]
Power MOSFET achieves 0.34 mΩ on resistance
Vishay Intertechnology, Inc. introduced a new 40 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK 10×12 package with best-in-class on-resistance. Compared to competing devices in the same footprint, the Vishay Siliconix SiJK140E slashes on-resistance by 32 % while offering 58 % lower on-resistance than 40 V MOSFETs in the TO-263-7L. With on-resistance down to […]
150 V MOSFET claims new low for on resistance
Vishay Intertechnology, Inc. introduced a new 150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6×5) package. Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3 % and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power […]
MOSFET design combines low RDS(on) with extended safe operating area
Infineon Technologies AG announces the new OptiMOS 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS(on) of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET. The device prevents damage to the load by limiting the high inrush current and ensures minimal losses […]
Mitigate reverse recovery overshoot in MOSFET body diodes
Because of their compact size, higher efficiency, and superior performance in high-power applications, SiC MOSFETs are now replacing Si devices in switching applications. SiC devices enable faster switching times, significantly reducing switching losses. These advantages stem from the unique electrical and material properties of SiC-based devices — snappy reverse recovery inherent to the structure of […]
IGBT and MOSFET drivers provide 4 A in 200 nsec
Vishay Intertechnology, Inc. introduced two new IGBT and MOSFET drivers in the compact, high isolation stretched SO-6 package. Delivering high peak output currents of 3 A and 4 A, respectively, the Vishay Semiconductors VOFD341A and VOFD343A offer high operating temperatures to +125 °C and low propagation delay of 200 ns maximum. Consisting of an AlGaAs LED optically coupled to an […]
Bipolar junction transistors show their muscle
Recent enhancements to the classic BJT show that the classic transistor has plenty of life left and can challenge SiC and GaN devices in some power applications. Amidst the advances in CMOS and wide bandgap semiconductor technology, you can easily forget that the first transistor invented by William Shockley in 1949 was a bipolar junction […]
