Diodes Incorporated announced the industry’s first automotive-compliant 40V dual MOSFET in a 3.3mm x 3.3mm package. The DMT47M2LDVQ can replace two discrete MOSFETs to reduce the board space footprint in many automotive applications, from electric seat control to advanced driver-assistance systems (ADAS). The DMT47M2LDVQ integrates two n-channel enhancement-mode MOSFETs with the industry’s lowest RDS(ON) for […]
MOSFETS
Half-bridge power stage delivers Rds(ON) down to 8.05 mΩ
Vishay Intertechnology introduced a new 40 V n-channel MOSFET half-bridge power stage that delivers increased power density and efficiency for white goods and industrial, medical, and telecom applications. Integrating high side and low side MOSFETs in one compact PowerPAIR 3.3 mm by 3.3 mm package, the Vishay Siliconix SiZ240DT provides best in class on-resistance and […]
Voltage clamp protects 5-V circuits from overvoltages
Advanced Linear Devices Inc., announced a first-to-market low power, low voltage, high-precision voltage-clamp module. The SABMBOVP family is an ideal clamping solution for critical mission applications deployed in business, safety, and security products that are 5V or below. When these systems fail or are interrupted, operations may be significantly impacted. These ultra-low-voltage designs are increasingly […]
Boosting efficiency in fast-charge adapters
Gallium-nitride transistors help make charging circuits smaller and more economical. Jimmy Liu • GaN Systems Inc. When it comes to fast-charging power adapters for consumer devices, high power density and high efficiency are now the two major technical requirements. With fast switching speed and low on-state resistance (Rdson), GaN transistors enable adapters that charge fast […]
How SiC boosts efficiency in power conversion
The benefits silicon-carbide MOSFETs become evident from comparisons with their silicon counterparts. Rene Mente • Infineon Technologies New 650-V SiC MOSFETs make it practical to hit power conversion efficiency levels exceeding 97% in switched-mode power supply (SMPS) designs. Simply replacing silicon MOSFETs with SiC versions in typical resonant designs will improve efficiency, but the most significant gains […]
HIgh-voltage superjunction MOSFETs tailored for resonant supply topologies
For SMPS designs in industrial applications, recent technology trends include the need for high efficiency and power density as well as increased bus voltages. This triggers the need for power devices with 650 V breakdown voltage. With its 650 V CoolMOS CFD7 product family Infineon Technologies AG meets these demands. The devices are best suited for […]
n-channel MOSFET saves space, increases power density
Vishay Intertechnology, Inc. introduced a new 200 V n-channel MOSFET that offers industry-low typical on-resistance of 61 mΩ at 10 V in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, in addition to improved on-resistance times gate charge — a critical figure of merit (FOM) for MOSFETs used in switching applications — […]
Newark to handle Nexperia power GaN FETS for reduced power loss in EVs, 5G and IoT
Electronics distributor Newark now handles Nexperia’s new-to-market, innovative Power Gallium Nitride (GaN) FET range. GaN FET products deliver improved density and efficient power usage in a small form factor, enabling the development of efficient systems at a lower cost, and providing the potential to transform power performance in electric vehicles, 5G communications, IoT and more. […]
SiC MOSFET inverter board helps evaluate servomotor drive designs
In power electronics, motor drives take up a major share in the market. With its CoolSiC MOSFET Modular Application Design Kit (MADK) boards Infineon Technologies AG helps in further shortening time to market in this relevant segment. As part of the MADK platform for motors of up to 7.5 kW, the evaluation board EVAL-M5-IMZ120R-SIC is […]
-30 V, P-channel MOSFET offers on-resistance of 1.7 mΩ
Vishay Intertechnology, Inc. introduced the first-ever -30 V p-channel power MOSFET to offer on-resistance of 1.7 mΩ at 10 V. With its industry-low on-resistance and 6.15 mm by 5.15 mm thermally enhanced PowerPAK SO-8 single package, the Vishay Siliconix TrenchFET Gen IV SiRA99DP is purpose-built to increase power density. The low on-resistance of the MOSFET […]
