ROHM Semiconductor announces the RS6xxxxBx / RH6xxxxBx series of N-channel MOSFETs (40V/60V/80V/100V/150V; 13 part numbers) suitable for applications operating on 24V/36V/48V power supplies, such as base stations, servers, and motors for industrial and consumer equipment. In recent years, worldwide power consumption has been on the rise, driving the need for industrial equipment (e.g., servers and base stations, along […]
MOSFETS
Boards let you try power devices in your circuits
Cambridge GaN Devices (CGD) has introduced a range of Application Interface Boards that allow designers to try out the company’s rugged, easy-to-use ICeGaN HEMTs in existing circuits in place of competing MOSFET or GaN devices without having to re-layout the PCB. Application Interface Boards are adaptor PCBs that are soldered to an ICeGaN device, which […]
600 V SJ MOSFET boasts RDS(on) of 44 mΩ for EV chargers and servers
Magnachip Semiconductor Corporation announced that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor Field Effect Transistors (SJ MOSFETs) consisting of nine distinct products featuring proprietary design technology. Magnachip’s proprietary design provides a specific on-resistance (RSP) reduction of about 10%, and this result was achieved while maintaining the same cell […]
How SiC MOSFETs and Si IGBTs boost sustainability in green energy systems
Silicon carbide (SIC) MOSFETs and silicon (Si) IGBTs can both boost sustainability in green energy systems. Of course, they don’t compete across the board, there are uses where one or the other is clearly preferred. When comparing the two technologies, it often comes down to the prioritization of performance characteristics like light weight versus low […]
1200 V SiC MOSFETs deliver high power density for EV and energy infrastructure apps
onsemi announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics designers to achieve best-in-class efficiency and lower system cost. The new portfolio includes EliteSiC MOSFETs and modules that facilitate higher switching speeds to support the growing number of 800 V electric vehicle (EV) on-board […]
Silicon carbide MOSFET operates to 1200 V, 37 A
Diodes Incorporated introduces the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4 N-channel SiC MOSFET. This device addresses the demand for higher efficiency and higher power density for applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC-DC converters, and electric vehicle (EV) battery chargers. The […]
Application-specific MOSFETs increase power density by 58x
Nexperia announced the release of its first 80 V and 100 V application-specific MOSFETs (ASFETs) for hot-swap with an enhanced safe operating area (SOA) in a compact 8×8 mm LFPAK88 package. These new ASFETs are fully optimized for demanding hot-swap and soft-start applications and are qualified to 175°C for use in advanced telecom and computing […]
Silicon carbide MOSFETs feature low on resistance
Solitron Devices is pleased to announce the introduction of the SD11740 , 1200V Silicon Carbide (SiC), low RDS(on) MOSFET. Complimenting a strong offering of high voltage MOSFETs for high reliability/military applications, Solitron is expanding its silicon carbide product offering for demanding commercial and industrial applications. Packaged in a SOT-227, the SD11740 offers ultra-low RDS(on) of 8.6mΩ. The SOT-227 style […]
Gate drivers design drives high-voltage power devices for TVs
Renesas Electronics Corporation announced a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for electric vehicle (EV) inverters. Gate driver ICs are essential components to EV inverters, providing an interface between the inverter control MCU and the IGBTs […]
Automotive-grade devices available in tiny 32.7 mm x 22.5 mm package
STMicroelectronics has introduced five power-semiconductor bridges in popular configurations, housed in ST’s advanced ACEPACK SMIT package that eases assembly and enhances power density over conventional TO-style packages. Engineers can choose from two STPOWER 650V MOSFET half bridges, a 600V ultrafast diode bridge, a 1200V half-controlled full-wave rectifier, and a 1200V thyristor-controlled bridge leg. All devices meet […]
