The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an industry-standard SOT-227 form factor for medium to high frequency power applications. The modules support single switch and low-side chopper configurations with continuous drain currents from 50 A to 200 A and on-resistance as low as 12.1 […]
MOSFETS
750 V SiC MOSFETs target onboard chargers
Infineon Technologies AG launches new packages for the CoolSiC MOSFET 750 V G2 technology, engineered to deliver the highest system efficiency and power density in automotive and industrial power conversion applications. This latest innovation is now available in a range of packages, including Q-DPAK and D2PAK, offering a portfolio with typical RDS(on) values up to […]
T2PAK top-cool SiC MOSFETs target EV inverters
onsemi has released EliteSiC MOSFETs in the industry-standard T2PAK top-cool package for high-voltage automotive and industrial power conversion. The initial portfolio includes 650 V and 950 V silicon carbide MOSFET options intended for systems where thermal constraints and switching performance drive converter size, efficiency, and long-term reliability. Target applications include electric-vehicle traction and charging subsystems, […]
MOSFET powers 48 V hot swap in AI servers
Alpha and Omega Semiconductor Limited announced its AOLV66935, a 100V High Safe Operating Area (SOA) MOSFET in an LFPAK 8×8 package. AOS’s latest MOSFET is designed as an ideal solution for 48V Hot Swap architectures in AI servers. The power demands of AI servers are intensifying, primarily driven by the increasing performance of the GPU/TPU. […]
3300 V and 2300 V SiC MOSFETs add TAP structure
Navitas Semiconductor has released sample units of its new 3300 V and 2300 V ultra-high-voltage silicon carbide (SiC) MOSFETs, available in power-module formats, discrete packages, and known-good-die (KGD) options. The devices are based on the fourth-generation GeneSiC platform using a Trench-Assisted Planar (TAP) structure that improves electric-field distribution compared to conventional trench or planar MOSFETs. […]
Power MOSFET features low on resistance
Littelfuse, Inc. announced the release of the MMIX1T500N20X4 X4-Class Ultra-Junction Power MOSFET. This 200 V, 480 A N-channel MOSFET features an exceptionally low on-state resistance (RDS(on)) of just 1.99 mΩ, enabling superior conduction efficiency, simplified thermal management, and improved system reliability in power-dense designs. (View the video.) The MMIX1T500N20X4 utilizes a high-performance, ceramic-based, isolated SMPD-X package with […]
SiC MOSFET family adds Schottky-diode versions for lower switching losses
SemiQ Inc. has expanded its 1200 V Gen3 SiC MOSFET line with five SOT-227 power modules offering RDS(on) values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. The new GCMS versions incorporate Schottky barrier diodes, which reduce switching losses at elevated temperatures compared with the non-SBD GCMX variants. The modules are intended for medium-voltage, high-power […]
Automotive e-fuse controller reacts within 100 microseconds to faults
STMicroelectronics has introduced the VNF1248F automotive e-fuse MOSFET controller, the newest device in its STi2Fuse family. The controller provides rapid fault response, flexible configuration options, and low-power operation for use in vehicle power distribution and safety-critical systems. The VNF1248F reacts to faults within 100 microseconds—faster than a traditional wire fuse—to help prevent fault propagation within […]
Power devices offer reduced on-resistance and extended operating temperature range
Infineon has released the EasyPACK C, the latest addition to its EasyPACK family of power modules. The first products in this series use 1200V CoolSiC MOSFET G2 devices combined with Infineon’s.XT interconnection technology. These silicon carbide (SiC) modules are designed for high-efficiency, long-lifetime operation in industrial systems such as fast DC electric vehicle charging, megawatt […]
TOLL-package MOSFETs support compact, high-power electronics
Magnachip Semiconductor Corporation has released two 650V Super Junction MOSFETs in a TO-Leadless (TOLL) package configuration. The devices are designed for high-power and high-current applications, including consumer electronics such as televisions, gaming monitors, and power adaptors. The new MOSFETs use a 4-pin Kelvin source configuration, which helps minimize parasitic inductance in the gate-source return path. […]
