ROHM Semiconductor announced the QH8Mx5/SH8Mx5 series of dual-MOSFET products (N-channel + P-channel) featuring ±40V/±60V withstand voltages. The devices are ideal for driving motors in base stations (cooling fans) and industrial applications, such as factory automation equipment requiring 24V input. In recent years, MOSFETs have become increasingly required to ensure sufficient margin against voltage fluctuations by providing 40V and 60V withstand […]
MOSFETS
Comparing IGBT and SiC MOSFET PIMs in solar inverters
Side-by-side performance comparisons can show where silicon-carbide excels in PV installations. Steven Shackell • onsemi According to the International Energy Agency, solar power (PV) installations are on track to reach an installed capacity of 3,300 TWh by 2030, a yearly growth rate of 15% from 2019. Installations will be a mix of micro, mini and […]
High-side drivers integrate logic, MOSFET and analog circuitry in 6 mm x 6 mm
The VN9D30Q100F and VN9D5D20FN from STMicroelectronics introduce a new generation of automotive intelligent switches, the first in the market with digital current sensing among the fully digital on-chip diagnostic features. Designed for high-side connection in applications powered from a 12V battery, the drivers simplify the hardware and software design of electronic control units (ECUs) and […]
First fully configurable digital gate driver for Silicon Carbide MOSFETs
As demand for electric buses and other electrified heavy transport vehicles increases to meet lower emission targets, silicon carbide-based power management solutions are providing greater efficiencies in these transportation systems. To complement its broad portfolio of silicon carbide MOSFET discrete and module products, Microchip Technology Inc. ( announced a new 1200V production-ready digital gate driver, providing system […]
New 6-mohm SiC FET handles 750 V
UnitedSiC has responded to the power designer’s requests for higher-performance, higher-efficient SiC FETs with the announcement of the industry’s best 750V, 6mohm device. At an RDS(on) value of less than half the nearest SiC MOSFET competitor, the new 6mohm device also provides a robust short-circuit withstand time rating of 5s. Today’s announcement includes 9 new […]
SiC power FETs boast super-low 6-mΩ RDS(on)
At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are available in the […]
Single-chip driver handles high frequency switching of GaN enhancement-mode FETs
STMicroelectronics’ STDRIVEG600 half-bridge gate driver has a high current output and 45ns propagation delay, closely matched between high-side and low-side outputs, to handle high-frequency switching of GaN enhancement-mode FETs. Also suitable for driving N-channel silicon MOSFETs at up to 20V, the STDRIVEG600 allows the flexibility to apply up to 6V gate-source voltage (VGS) on GaN […]
Diode protection switch works in Type-C power delivery
Alpha and Omega Semiconductor Limited announced a new Type-C Power Delivery high voltage sink protection switch using ideal diode methodology for reverse current protection. The AOZ13984DI-02 and AOZ13987DI-02 are smart protection switches in a single small thermally enhanced 3mm x 3mm DFN package. The new products use AOS¡¯s advanced co-packaging technology, combining a high-performance IC with protection features and our latest […]
Three-phase MOSFET gate driver optimized for BLDC motor drives
TRINAMIC Motion Control GmbH & Co. KG introduces the fully integrated TMC6140-LA 3-phase MOSFET gate driver that simplifies design and maximizes the battery life of brushless direct current (DC) motor drives. The TMC6140-LA 3-phase MOSFET gate driver integrates all three bottom shunt amplifiers to provide a complete motor drive solution with 30-percent improved power efficiency while […]
Power bipolar transistors handle up to 8 A and 100 V
Nexperia announced nine new power bipolar transistors, extending its portfolio of products in the thermally and electrically advantageous DPAK package to cover applications from 2 A to 8 A and from 45 V up to 100 V. The new MJD series parts are pin-to-pin compatible with other MJD devices in DPAK-package, and they also offer significant […]
