Committed to set new technology standards in discrete power MOSFET technologies, Infineon Technologies AG introduces its new OptiMOS 6 family. Based on Infineon´s thin wafer technology it enables significant performance benefits and will cover a wide voltage range. The new 40 V MOSFET family has been optimized for synchronous rectification in SMPS for servers, desktop PCs, wireless chargers, […]
Powering graphics processors from a 48-V bus
New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation AI platforms. Alex Lidow | Efficient Power Conversion Artificial Intelligence (AI), gaming, cloud computing, and autonomous vehicles all employ the latest generation of graphics processors (GPUs) in lieu of CPUs. The reasoning is that […]
Why wide bandgap HEMTs excel at efficient power conversion
High electron mobility transistors reduce power supply size thanks to special make-up that eliminates sources of energy loss. Andrea Bricconi | Wei Deng, Infineon Technologies AG It is an exciting time for power supply designers. We are learning how devices based on wide bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride-on-silicon (GaN-on-Si) […]
SiC MOSFET modules target UPS, energy storage apps
Infineon Technologies AG launches new devices in the 1200V CoolSiC MOSFET family. The CoolSiC Easy 2B power modules enable engineers to reduce system costs by increasing power density. In addition, they can also lower operational costs significantly. Owing to about 80 percent lower switching losses compared to silicon IGBTs, inverter efficiency levels exceeding 99 percent […]
Fast-recovery super-junction MOSFETs optimized for bridge and ZVS converters
STMicroelectronics’ MDmesh DM6 600V MOSFETs contain a fast-recovery body diode to bring the performance advantages of the company’s latest super-junction technology to full- and half-bridge topologies, Zero-Voltage Switching (ZVS) phase-shift converters, and applications and topologies generally that need a robust diode to handle dynamic dV/dt. Leveraging ST’s advanced carrier-lifetime control technology, the MDmesh DM6 MOSFETs have reduced reverse-recovery […]
Power MOSFET features low ON-resistance of 0.58 mΩ at 10
Vishay Intertechnology, Inc. introduced a 25V n-channel TrenchFET Gen IV power MOSFET that features the industry’s lowest maximum on-resistance for such a device: 0.58 mΩ at 10V. Delivering increased efficiency and power density for a wide range of applications, the Vishay Siliconix SiRA20DP offers the lowest gate charge and gate charge times on-resistance figure of […]
Optimizing the energy efficiency of converters and controllers
Here’s how to evaluate energy efficiency associated with components that make up widely used power conversion circuitry. FRANK DE STASI, MATHEW JACOB, TEXAS INSTRUMENTS INC. IN SOME WAYS, selecting a module, converter or controller for power conversion resembles deciding whether to take a flight, board a train, or drive from point A to B. Once […]
Automotive-grade 100-V, 4-A half-bridge N-channel MOSFET drivers target hybrid powertrains
Renesas Electronics Corporation announced a new family of automotive-grade 100V, 4A half-bridge N-channel MOSFET drivers. The ISL784x4 family features three devices: the ISL78424 and ISL78444 with single tri-level PWM input for controlling both gate drivers, and the ISL78434, which has dual independent inputs that separately control the high-side and low-side drivers. The ISL784x4 half-bridge N-MOSFET […]
High-efficiency flyback switcher ICs incorporate 900-V MOSFETs
Power Integrations announced the release of LinkSwitch-XT2 offline switcher ICs incorporating 900 V power MOSFETs. Targeting high-efficiency isolated and non-isolated flyback power supplies up to 8 W, the up-rated ICs are suitable for three-phase industrial power supplies to 480 VAC and high-quality consumer products destined for regions with unstable mains grids, tropical regions with frequent […]
MOSFET delivers low total gate charge to industrial and lighting applications
MagnaChip Semiconductor Corporation announced the introduction of a new High-Voltage Super Junction MOSFET with a 900V breakdown voltage and low total gate charge (Qg) (90R1K4P). The device with two package types, I-PAK and D-PAK, will sample to customers in November 2018 and will be manufactured in high volume in early first quarter of next year. […]
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