OMRON Corporation of Kyoto, western Japan globally released its new MOSFET relay module, the G3VM-21MT. The product is the first electronic component in the world to adopt a T-type circuit structure. With T-type circuit structure consisting of compact-size and longer-lifecycle solid-state relays that output signals using no physical contact, the relay module minimizes the leakage […]
60 V MOSFET offers RS-S(ON) down to 10 mΩ typical in a 3 mm x 3 mm footprint
Vishay Intertechnology, Inc. introduced a new common-drain dual n-channel 60 V MOSFET in the compact, thermally enhanced PowerPAK 1212-8SCD package. Designed to increase power density and efficiency in battery management systems, plug-in and wireless chargers, DC/DC converters, and power supplies, the Vishay Siliconix SiSF20DN offers the industry’s lowest RS-S(ON) in a 60 V common-drain device. […]
SiC FETs feature RRS(on) below 10 mΩ for high efficiency, low losses
Four new SiC FETs deliver RDS(ON) levels as low as 7 mΩ, delivering unprecedented levels of performance and efficiency for use in high-power applications such as electric vehicle (EV) inverters, high-powered dc/dc converters, high-current battery chargers and solid-state circuit breakers. Of the four new UF3C SiC FET devices, one is rated at 650 V with […]
Power Electronics Top Talks in November 2019 on EDABoard.com
Peer-to-peer, engineer-to-engineer questions and answers from the EDABoard.com engineering community around power electronics. Click the “Read more” link and follow the entire conversation and maybe add your two cents by logging in to EDAboard.com Current-mode boost converter UC3845 – I designed this circuit to boost voltage from 15v to 36v In no-load condition, everything is […]
Optimizing discrete SiC devices
SiC FETs now include measures aimed at keeping losses down while managing fast switching waveforms. Dr. Anup Bhalla | UnitedSiC Silicon carbide (SiC) FETs have low on-resistances, fast switching speeds, and intrinsic diodes with low reverse recovery charge (QRR) and low forward-drop (VF) qualities. These qualities make SiC FETs suitable for use in active-front-end three-phase […]
Common misconceptions about the MOSFET body diode
Engineers who design power circuits around wide-bandgap semiconductors frequently make costly mistakes that relate to the switching behavior of transistors. Julian Styles | GaN Systems We need to face an awkward and embarrassing truth about ourselves in the world of power electronics. I’d like to ask you to try to be completely open and honest […]
4-pin SiC MOSFETs deliver 35% lower switching loss over conventional packages
Rohm announced the availability of six new trench gate structure SiC MOSFETs (650V/1200V), the SCT3xxx xR series, ideal for server power supplies, UPS systems, solar power inverters, and EV charging stations requiring high efficiency. The SCT3xxx xR series utilizes a 4-pin package (TO-247-4L) that maximizes switching performance, making it possible to reduce switching loss by up […]
Power Electronics Top Talks in September 2019 on EDABoard.com
Peer-to-peer, engineer-to-engineer questions and answers from the EDABoard.com engineering community around power electronics. Click the “Read more” link and follow the entire conversation and maybe add your two cents by logging in to EDAboard.com Flyback SMPS power MOSFET getting hot – I built this flyback SMPS transformer for this circuit as shown above using PQ3230 […]
Tiny automotive-compliant MOSFETs deliver increased power density
Diodes Incorporated announced the introduction of the 40V-rated DMTH4008LFDFWQ and 60V-rated DMTH6016LFDFWQ automotive-compliant MOSFETs packaged in DFN2020. These miniature MOSFETs occupy just 10% of the PCB area of larger packages, such as SOT223, enabling greater power density in DC-DC converters, LED backlighting, ADAS, and other ‘under-the-hood’ automotive applications. The DMTH4008LFDFWQ has a typical RDS(ON) of […]
Dual n-channel 40/60-V power MOSFETs come in PDFN56 dual package
Taiwan Semiconductor Co., Ltd. (TSC), a global manufacturer of discrete devices (diodes, MOSFETs) and power management ICs, expands its product portfolio with Dual N-Channel Power MOSFET in a PDFN56 dual package. Samples and products are in stock and available now. Taiwan Semiconductor’s new Dual N-Channel Power MOSFETs in PDFN56 Dual package (TSM110NB04DCR, TSM150NB04DCR, TSM250NB06DCR, TSM300NB06DCR) deliver improved power density. The MOSFETs are available with […]
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