Alpha and Omega Semiconductor Limited announced its AOLV66935, a 100V High Safe Operating Area (SOA) MOSFET in an LFPAK 8×8 package. AOS’s latest MOSFET is designed as an ideal solution for 48V Hot Swap architectures in AI servers. The power demands of AI servers are intensifying, primarily driven by the increasing performance of the GPU/TPU. […]
MOSFETS
3300 V and 2300 V SiC MOSFETs add TAP structure
Navitas Semiconductor has released sample units of its new 3300 V and 2300 V ultra-high-voltage silicon carbide (SiC) MOSFETs, available in power-module formats, discrete packages, and known-good-die (KGD) options. The devices are based on the fourth-generation GeneSiC platform using a Trench-Assisted Planar (TAP) structure that improves electric-field distribution compared to conventional trench or planar MOSFETs. […]
Power MOSFET features low on resistance
Littelfuse, Inc. announced the release of the MMIX1T500N20X4 X4-Class Ultra-Junction Power MOSFET. This 200 V, 480 A N-channel MOSFET features an exceptionally low on-state resistance (RDS(on)) of just 1.99 mΩ, enabling superior conduction efficiency, simplified thermal management, and improved system reliability in power-dense designs. (View the video.) The MMIX1T500N20X4 utilizes a high-performance, ceramic-based, isolated SMPD-X package with […]
SiC MOSFET family adds Schottky-diode versions for lower switching losses
SemiQ Inc. has expanded its 1200 V Gen3 SiC MOSFET line with five SOT-227 power modules offering RDS(on) values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. The new GCMS versions incorporate Schottky barrier diodes, which reduce switching losses at elevated temperatures compared with the non-SBD GCMX variants. The modules are intended for medium-voltage, high-power […]
Automotive e-fuse controller reacts within 100 microseconds to faults
STMicroelectronics has introduced the VNF1248F automotive e-fuse MOSFET controller, the newest device in its STi2Fuse family. The controller provides rapid fault response, flexible configuration options, and low-power operation for use in vehicle power distribution and safety-critical systems. The VNF1248F reacts to faults within 100 microseconds—faster than a traditional wire fuse—to help prevent fault propagation within […]
Power devices offer reduced on-resistance and extended operating temperature range
Infineon has released the EasyPACK C, the latest addition to its EasyPACK family of power modules. The first products in this series use 1200V CoolSiC MOSFET G2 devices combined with Infineon’s.XT interconnection technology. These silicon carbide (SiC) modules are designed for high-efficiency, long-lifetime operation in industrial systems such as fast DC electric vehicle charging, megawatt […]
TOLL-package MOSFETs support compact, high-power electronics
Magnachip Semiconductor Corporation has released two 650V Super Junction MOSFETs in a TO-Leadless (TOLL) package configuration. The devices are designed for high-power and high-current applications, including consumer electronics such as televisions, gaming monitors, and power adaptors. The new MOSFETs use a 4-pin Kelvin source configuration, which helps minimize parasitic inductance in the gate-source return path. […]
1400 V SiC MOSFETs operate at 200 °C junction temperature continuously
High-power applications such as electric vehicle charging, battery energy storage systems, and commercial, construction, and agricultural vehicles (CAVs) are driving the demand for higher system-level power density and efficiency to meet increasing performance expectations. At the same time, these requirements introduce new design challenges, including reliable operation under harsh environmental conditions, robustness against transient overloads, […]
Dual N-channel MOSFET provides thermal management through exposed pad configuration
Micro Commercial Components Corp. has released the MCACD033N06Q-TP, a dual 20V N-channel MOSFET designed for automotive applications. The device has received AEC-Q101 certification and is packaged in a PDFN-5060-8D format measuring 5mm by 6mm. The MCACD033N06Q-TP features a drain-source voltage rating of 60V and a gate-source voltage rating of ±20V. The component offers an on-resistance […]
Driver IC enables flexible MOSFET control in 48 V systems
Ready for 48V automotive power architectures, the L98GD8 driver from STMicroelectronics has eight fully configurable channels for driving MOSFETs in flexible high-side and low-side configurations. Able to operate from a 58V supply, the L98GD8 provides rich diagnostics and protection for safety and reliability. The 48V powernet lets car makers increase the capabilities of mild-hybrid systems, […]
