Navitas Semiconductor introduces a new level of reliability to meet the system lifetime requirements of the most demanding automotive and industrial applications. Navitas’ latest generation of 650 V and 1200 V ‘trench-assisted planar’ SiC MOSFETs combined with an optimized, HV-T2Pak top-side cooled package, delivers the industry’s highest creepage of 6.45 mm to meet IEC-compliance for applications […]
MOSFETS
MOSFET meets 48V telecom/datacenter hot-swap requirements
Alpha and Omega Semiconductor Limited announced its AOTL66935 utilizes AOS’ 100V AlphaSGT proprietary MOSFET technology, which combines the advantages of trench technology for low on-resistance with high safe operating area (SOA) capability that meets 48V hot swap requirements in AI server and telecom applications. The AOTL66935 hot swap MOSFET prevents damage to the system by limiting […]
Co-packaged SiC MOSFETs offer switching speeds as low as 67 ns
SemiQ Inc has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. In addition to smaller die sizes, third-generation SIC devices offer faster switching speeds and reduced losses. The family of highly rugged and easy mount devices currently offers six devices with an RDSon range of 8.4 to 39 […]
Compact 8 mm × 8 mm PMIC suppors dynamic voltage adjustment in 12.5 mV increments
Microchip Technology announces the MCP16701, a Power Management Integrated Circuit (PMIC) designed to meet the needs of high-performance MPU and FPGA designers. The MCP16701 integrates eight 1.5A buck converters that can be paralleled, four 300 mA internal Low Dropout Voltage Regulators (LDOs), and a controller to drive external MOSFETs. This highly integrated device can result in a […]
Temperature-stable MOSFET for supercap voltage regulation in industrial applications
Advanced Linear Devices Inc. (ALD) announced its latest addition to its Supercapacitor Auto-Balancing (SAB™) MOSFET family. This dual MOSFET provides unmatched auto-balancing capabilities and power management for supercapacitors ranging from 2.8V to 3.3V. The ALD910030 uses virtually no power for cell balancing and prevents most catastrophic failures. The chip enhances performance across various sectors, including […]
Power MOSFET reaches 0.048 Ω RDSon
Vishay Intertechnology, Inc. introduced a new Gen 4.5 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHK050N65E slashes on-resistance by 48.2 % while offering a 65.4 % lower resistance times gate charge, a key figure of […]
500 V SMT transformers shrink in size
TDK has announced the EPCOS EP9 series of surface-mount transformers (ordering code B82804E). At 13 × 11 × 11 mm, these parts are smaller than the company’s existing E10EM series of SMT transformers designed for IGBT and FET gate driver circuits. Engineered for high performance in demanding e-mobility and industrial applications with 500 V system […]
GaN transistors adopt industry-standard MOSFET package dimensions
Infineon Technologies AG addresses this challenge by announcing the high-performance gallium nitride CoolGaN G3 Transistor 100 V in RQFN 5×6 package (IGD015S10S1) and 80 V in RQFN 3.3×3.3 package (IGE033S08S1). The CoolGaN G3 100 V Transistor devices will be available in a 5×6 RQFN package with a typical on-resistance of 1.1 mΩ. Additionally, the 80 […]
1200 V MOSFET design cuts switching losses for EV charging applications
SemiQ Inc. has announced its third-generation QSiC 1200V MOSFET, a silicon carbide device engineered for high-voltage applications. The new design achieves a 20% reduction in die size compared to the company’s second-generation devices while delivering enhanced switching performance and efficiency metrics. The device features key electrical specifications including a 1200V drain-to-source voltage (VDS), total switching […]
Compact MOSFET packaging reduces footprint and supports optical inspection
Renesas Electronics Corporation introduced new 100V high-power N-Channel MOSFETs that deliver industry-leading high-current switching performance for applications such as motor control, battery management systems, power management, and charging. End products include electric vehicles, e-bikes, charging stations, power tools, data centers, uninterruptable power supplies (UPS,) and more. Renesas has developed a new MOSFET wafer manufacturing process […]
