Infineon Technologies AG adds another industry-standard package to its CoolSiC MOSFET 1200 V module family. The proven 62 mm device has been designed in half-bridge topology and is based on the trench chip technology. It opens up silicon carbide for applications in the medium power range starting at 250 kW – where silicon reaches the […]
New 100-V half-bridge MOSFET drivers target 48-V power supplies, Class-D audio amps, inverters,
Renesas Electronics Corporation introduced the HIP2211 and HIP2210, a new pair of 100V half-bridge MOSFET drivers. The HIP2211 is a next-generation pin-compatible upgrade to Renesas’ popular ISL2111 bridge driver, while the new HIP2210 offers a tri-level PWM input to simplify power supply and motor drive design. The HIP2211 and HIP2210 are ideal for 48V telecom […]
SiC MOSFETs offer fast switching, high efficiency
Solid State Devices, Inc. (SSDI) has expanded its hermetic SiC MOSFET offerings with the new SFC85N90 family. The SFC85N90 are enhancement mode, N-channel SiC MOSFETs. These fast switching devices offer a very low RDS(on) of only 13 mΩ typ and 17 mΩ max (@ 50 A, 25°C). These radiation-tolerant SiC MOSFETs can easily replace traditional silicon […]
QPL-qualified rad-hard MOSFETs feature direct-to-PCB mounting
Reliably attaching surface mount hermetic power packages to PCBs is a common challenge faced by space system designers. Too often, different thermal coefficients lead to an expansion mismatch of different materials. IR HiRel, an Infineon Technologies AG solves this issue with fourteen newly QPL-qualified radiation-hardened (rad-hard) MOSFETs housed in an innovative direct-to-PCB mounting package. SupIR-SMD […]
Fourth-gen SiC MOSFETs feature lowest ON resistance
Rohm Semiconductor announced the 4th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main drive inverter, as well as power supplies for industrial equipment. In recent years, the proliferation of next-generation electric vehicles (xEVs) has been accelerating the development of smaller, lighter, and more efficient electrical systems. In particular, improving efficiency while decreasing […]
Next-gen, 650 V GaN devices in copper-clip SMD package deliver high-efficiency to automotive, industrial apps
Nexperia has announced a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging. Devices achieve superior switching FOMs and on-state performance with improved stability, and simplify application designs thanks to their cascode configuration which eliminates the need for complicated drivers […]
SiC 1,700-V MOSFETs designed for aux power supplies in 3-phase conversion systems
Infineon Technologies complements its CoolSiC MOSFET offering with another voltage class. Having added 650V to the portfolio earlier this year, the company is now launching the 1700V class with its proprietary trench semiconductor technology. Maximizing the strong physical characteristics of silicon carbide (SiC), this ensures that the new 1700V surface-mounted devices (SMD) offer reliability, as […]
Dual MOSFETs integrated into single package measuring just 3.3mm x 3.3mm
Diodes Incorporated announced the availability of the first in a new generation of discrete MOSFETs. The DMN3012LEG delivers increased efficiency in a smaller package to provide significant cost, power, and space savings in a wide variety of power conversion and control applications. The DMN3012LEG integrates dual MOSFETs in a single package measuring just 3.3mm x […]
New 40-60-V MOSFETs feature extremely low RDS(on), high-current capability
Infineon Technologies adds three new devices in the D²PAK 7pin+ package to its StrongIRFET 40-60 V MOSFET product family. These new components offer extremely low R DS(on) and high current-carrying capability, which increases both robustness and reliability for high-power-density applications that require high efficiency. The three new MOSFETs target battery-powered applications including, battery-powered tools, battery […]
P-channel MOSFETs now available in Power-SO8 package
Nexperia has launched industry’s first family of P-channel MOSFETs in the robust, space-saving LFPAK56 (Power-SO8) package. AEC-Q101 qualified for automotive applications, the new devices are an ideal replacement for DPAK MOSFETs, offering a reduction in footprint of over 50% whilst maintaining high performance levels. The new products are available in 30 V – 60 V, […]
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